Patents by Inventor Young-June Yu

Young-June Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150075599
    Abstract: A device operable to convert light to electricity, comprising: a substrate comprising a semiconductor material, one or more structures essentially perpendicular to the substrate, one or more layers conformally disposed on the one or more structures wherein the one or more structures and the one or more layers form one or more junctions, and an electrically conductive material disposed on the substrate in the area between the one or more structures.
    Type: Application
    Filed: September 19, 2013
    Publication date: March 19, 2015
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib WOBER
  • Publication number: 20150053860
    Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Application
    Filed: September 30, 2014
    Publication date: February 26, 2015
    Inventors: Peter Duane, Young-June Yu, Munib Wober
  • Publication number: 20150041937
    Abstract: Color filter array devices and methods of making color filter array devices are disclosed herein. A color filter array may include a substrate having a plurality of pixels thereon, one or more nanowires associated with each of the plurality of pixels, wherein each of the one or more nanowires extends substantially perpendicularly from the substrate, and an optical coupler associated with each of the one or more nanowires. A method of making a color filter array may include, making an array of nanowires, wherein each of the nanowires extend substantially perpendicularly from a substrate, disposing a transparent polymer material to substantially encapsulate the nanowires, removing the nanowires from the substrate, providing a pixel array comprising a plurality of pixels, wherein a hard polymer substantially covers an image plane of the pixel array, disposing the array of nanowires on the pixel array, and removing the transparent polymer encapsulating the nanowires.
    Type: Application
    Filed: August 9, 2013
    Publication date: February 12, 2015
    Applicant: Zena Technologies, Inc.
    Inventors: Young-June YU, Munib WOBER
  • Publication number: 20150001410
    Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.
    Type: Application
    Filed: September 16, 2014
    Publication date: January 1, 2015
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20140361356
    Abstract: An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.
    Type: Application
    Filed: June 2, 2014
    Publication date: December 11, 2014
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20140339666
    Abstract: Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.
    Type: Application
    Filed: August 4, 2014
    Publication date: November 20, 2014
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8889455
    Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: November 18, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Peter Duane, Young-June Yu, Munib Wober
  • Patent number: 8890271
    Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: November 18, 2014
    Assignees: Zena Technologies, Inc., President and Fellows of Harvard College
    Inventors: Turgut Tut, Peter Duane, Young-June Yu, Winnie N. Ye, Munib Wober, Kenneth B. Crozier
  • Patent number: 8835905
    Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: September 16, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Munib Wober, Young-June Yu
  • Patent number: 8835831
    Abstract: Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: September 16, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20140252314
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Application
    Filed: May 19, 2014
    Publication date: September 11, 2014
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8766272
    Abstract: “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: July 1, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8754359
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: June 17, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20140150857
    Abstract: Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, a first junction, a second junction and a third junction; wherein the first junction and the second junction are arranged with opposite polarity and the second junction and the third junction are arranged with opposite polarity. The photovoltaic device may further comprise a terminal directly electrically connected to anodes of the first and second junctions or to cathodes of the first and second junctions.
    Type: Application
    Filed: December 4, 2012
    Publication date: June 5, 2014
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib WOBER
  • Patent number: 8735797
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: May 27, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8710488
    Abstract: A first exemplary device has a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The first exemplary device may further have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. A second exemplary device has a substrate, a nanowire and one or more photogates surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The second exemplary device may have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. The one or more photogates comprise an epitaxial layer.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: April 29, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20140054661
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Application
    Filed: October 31, 2013
    Publication date: February 27, 2014
    Applicant: Zena Technologies, Inc.
    Inventors: Young-June YU, Munib WOBER
  • Publication number: 20140007928
    Abstract: Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a reflective layer disposed on the substrate, and one or more junctions conformally disposed on the one or more structures.
    Type: Application
    Filed: July 6, 2012
    Publication date: January 9, 2014
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib Wober
  • Publication number: 20130341749
    Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.
    Type: Application
    Filed: August 26, 2013
    Publication date: December 26, 2013
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib WOBER
  • Patent number: 8519379
    Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: August 27, 2013
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober