Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.

Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.

Abstract: An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may also include a readout circuit which may include a reset transistor, a charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive the light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light beam to the bulk substrate. In the embodiments herein, with the presence of the nanowire photogate and a substrate photogate, light of different wavelengths can be detected.

Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500 nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern.

Abstract: Embodiments of the present invention relate to systems and methods for high speed, high resolution imaging, which includes a micropixel array that includes, at least one macropixel, and a macropixel selector module; a micropixel array which is coupled to the macropixel array and includes at least one micropixel, a micropixel selector module, and an analog-to-digital converter; and a global bunch counter.

Abstract: An embodiment relates to a device comprising a nanowire photodiode comprising a nanowire and at least on vertical photogate operably coupled to the nanowire photodiode.

Abstract: Embodiments of the present invention relate to systems and methods for high speed, high resolution imaging, which includes a micropixel array that includes, at least one macropixel, and a macropixel selector module; a micropixel array which is coupled to the macropixel array and includes at least one micropixel, a micropixel selector module, and an analog-to-digital converter; and a global bunch counter.

Abstract: An imaging device including a plurality of electron sensing elements for receiving energy from an electron energy source is provided. Each of the electron sensing elements includes at least one respective charge collection element configured to receive and store energy from the respective energy sensing element. The imaging device also includes a plurality of switching elements positioned between respective ones of the plurality of energy sensing elements. The imaging device is configured to collect energy received by at least two of the plurality of energy sensing elements in the at least one respective charge collection element of one of the at least two of the plurality of energy sensing elements through actuation of at least one of the switching elements.

Abstract: The present invention relates to a charge coupled device (CCD) and a driving method, and the driving method of the CCD includes the steps of: providing a CCD including a semiconductor substrate, a photodiode in the semiconductor substrate, a charge transfer channel in the semiconductor substrate, and a charge transferring element including a first, a second, a third and a fourth transferring electrode with a three-level structure over the semiconductor substrate, wherein the charge transferring element transfers electric charges from the photodiode to the charge transfer channel and from the charge transfer channel to a predetermined portion of the CCD, and wherein the first transferring electrode is located at a first level of the three-level structure, the second and the fourth transferring electrodes are located at a second level of the three-level structure and remain within a vertical domain of the first transferring electrode in a wire region, and the third transferring electrode is located at a third l

Abstract: A color linear CCD for a pickup apparatus comprises a photodiode array including a blue-sensing photodiode array formed between a red-sensing photodiode array and a green-sensing photodiode array. A storage area is located beside of the red-sensing photodiode array for storing the signal charges produced by the red-sensing and blue-sensing photodiode arrays. A first HCCD shift register area is located beside of the green-sensing photodiode array for moving the signal charges produced by the green-sensing photodiode array. A second HCCD shift register area is formed beside of the storage area for alternately receiving the signal charges produced by the red-sensing and blue-sensing photodiode arrays. In another embodiment the red-sensing photodiode array is placed between the blue and green sensing photodiode arrays.