Abstract: Disclosed in the present invention are a microporous polyethylene film and a method of manufacture thereof. The polyethylene microporous film manufactured according to the present invention may contribute to an increased productivity of stable products as its extrusion and stretching may be done readily. And thus manufactured product may be used for battery separators and various filters owing to its high gas permeability, superior puncture strength, and small ratio of shrinkage.

Abstract: Disclosed are a precharge circuit employing an inactive weak precharging and equalizing scheme, a memory device including the same and a precharging method. The inactive weak precharging and equalizing scheme equalizes a non-selected bit line and complementary bit line while sensing and amplifying memory cell data delivered to a selected bit line and complementary bit line to evaluate the voltage difference between the selected bit line and complementary bit line. Then, the scheme precharges the selected bit line and complementary bit line and the non-selected bit line and complementary bit line. This does not require high precharge driving capability for inactivated bit line and complementary bit line equalized to a predetermined voltage level so that precharge current and operating current can be reduced.

Abstract: The present invention discloses a microporous high-density polyethylene film for a battery separator, and process for preparing the same. The microporous high-density polyethylene film according to the present invention comprises of high-density polyethylene with weight average molecular weight of 2×105˜4×105, containing not more than 5 wt % of molecules with molecular weight of 1×104 or less and not more than 5 wt % of molecules with molecular weight of 1×106 or more, and has the properties of puncture strength of 0.22 N/?m or more, Darcy's permeability constant of 1.8×10?5 Darcy or more, and shrinkage of 4% or less in machine and transverse direction, respectively. Particularly, the microporous high-density polyethylene film has excellent extrusion-compoundability and stretchability with high productivity and enhances performances and stability of the battery using the film.

Abstract: A memory cell structure of a metal (or via) programmable ROM whereby a transistor is shared between bit cells of the programmable ROM. Such a memory cell structure may include: a word line; a bit line; first and second virtual grounding lines; a grounding line; a first bit cell selected by signals of the word line and the first virtual grounding line; and a second bit cell selected by signals of the word line and the second virtual grounding line, wherein a cell transistor, one side of which is connected to the bit line is shared both by the first and second bit cells. Also, the other side of the cell transistor may be floated or connected to the bit line or, alternatively, connected to any one of the first virtual grounding line, the second virtual grounding line and the grounding line, and the gate of the cell transistor is connected to the word line.

Abstract: Disclosed is a mobile telephone terminal provided with a main housing having an antenna unit, a speaker unit, a LCD, a key array including a plurality of keys, and a microphone unit, and comprising (a) the main housing including a front end and at least one side end, and (b) a replaceable sub-housing including a front end, a first wing and a second wing extended from both side surfaces of the front end in the longitudinal direction, and an accommodation area disposed between the front end and the first and second wings, wherein the replaceable sub-housing surrounds a designated area of the main housing and is attached to and detached from the main housing in the longitudinal direction.

Abstract: A memory cell structure of a metal (or via) programmable ROM whereby a transistor is shared between bit cells of the programmable ROM. Such a memory cell structure may include: a word line; a bit line; first and second virtual grounding lines; a grounding line; a first bit cell selected by signals of the word line and the first virtual grounding line; and a second bit cell selected by signals of the word line and the second virtual grounding line, wherein a cell transistor, one side of which is connected to the bit line is shared both by the first and second bit cells. Also, the other side of the cell transistor may be floated or connected to the bit line or, alternatively, connected to any one of the first virtual grounding line, the second virtual grounding line and the grounding line, and the gate of the cell transistor is connected to the word line.