Abstract: An inductor design on a wafer level package (WLP) does not need to depopulate the solder balls on the die because the solder balls form part of the inductor. One terminal on the inductor couples to the die, the other terminal couples to a single solder ball on the die, and the remaining solder balls that mechanically contact the inductor remain electrically floating. The resulting device has better inductance, direct current (DC) resistance, board-level reliability (BLR), and quality factor (Q).

Abstract: A multilayer capacitor is provided that includes a plurality of vias configured to receive interconnects from a die.

Abstract: A high-speed, high-density Input/Output bridge couples dies on a substrate to each other using a flexible connector that is attached to the substrate using solder balls disposed in openings in the substrate. Thus, the bulky, male-to-female connectors and/or silicon bridges are eliminated while still permitting dies disposed on the substrate to be coupled together.

Abstract: An apparatus includes a two-terminal MLCC. The two-terminal MLCC includes a conductive layer, where the conductive layer includes at least one slot. The apparatus may also include a second conductive layer that includes at least one slot and an insulating layer that separates the two conductive layers. In one example, a first (e.g., positive) terminal of the two-terminal MLCC is formed by a first set of plates, where each plate in the first set includes at least one slot. A second (e.g., negative) terminal of the two-terminal MLCC is formed by a second set of plates, where each plate in the second set also includes at least one slot. The first set of plates and the second set of plates are interleaved, and each pair of plates is separated by an insulating layer.

Abstract: Some implementations provide a semiconductor package structure that includes a package substrate, a first package, an interposer coupled to the first package, and a first set of through via insert (TVI). The first set of TVI is coupled to the interposer and the package substrate. The first set of TVI is configured to provide heat dissipation from the first package. In some implementations, the semiconductor package structure further includes a heat spreader coupled to the interposer. The heat spreader is configured to dissipate heat from the first package. In some implementations, the first set of TVI is further configured to provide an electrical path between the first package and the package substrate. In some implementations, the first package is electrically coupled to the package substrate through the interposer and the first set of TVI. In some implementations, the first set of TVI includes a dielectric layer and a metal layer.

Abstract: Some implementations provide an integrated device (e.g., semiconductor device) that includes a substrate and an inductor in the substrate. In some implementations, the inductor is a solenoid inductor. The inductor includes a set of windings. The set of windings has an inner perimeter. The set of windings includes a set of interconnects and a set of vias. The set of interconnects and the set of vias are located outside the inner perimeter of the set of windings. In some implementations, the set of windings further includes a set of capture pads. The set of interconnects is coupled to the set of vias through the set of capture pads. In some implementations, the set of windings has an outer perimeter. The set of pads is coupled to the set of interconnects such that the set of pads is at least partially outside the outer perimeter of the set of windings.

Abstract: A multilayer capacitor is provided that includes a plurality of vias configured to receive interconnects from a die.

Abstract: An embedded layered inductor is provided that includes a first inductor layer and a second inductor layer coupled to the first inductor layer. The first inductor layer comprises a patterned metal layer that may also be patterned to form pads. The second inductor layer comprises metal deposited in a dielectric layer adjacent the patterned metal layer.

Abstract: Some novel features pertain to an integrated device that includes a substrate, a first cavity through the substrate, and a toroid inductor configured around the first cavity of the substrate. The toroid inductor includes a set of windings configured around the first cavity. The set of windings includes a first set of interconnects on a first surface of the substrate, a set of though substrate vias (TSVs), and a second set of interconnects on a second surface of the substrate. The first set of interconnects is coupled to the second set of interconnects through the set TSVs. In some implementations, the integrated device further includes an interconnect material (e.g., solder ball) located within the first cavity. The interconnect material is configured to couple a die to a printed circuit board. In some implementations, the interconnect material is part of the toroid inductor.

Abstract: A system includes a first connector coupled to a first surface of a substrate. The first connector enables the system to be electrically coupled to a first device external to the substrate. The system includes a second connector coupled to a second surface of the substrate. The system also includes a plurality of conductive vias extending through the substrate from the first surface to the second surface. The plurality of conductive vias surrounds the first connector and the second connector. The plurality of conductive vias is electrically coupled together to form a toroidal inductor. A first lead of the toroidal inductor is electrically coupled to the first connector. A second lead of the toroidal inductor is electrically coupled to the second connector.

Abstract: Systems and methods for preventing warpage of a semiconductor substrate in a semiconductor package. A continuous or uninterrupted stiffener structure is designed with a recessed groove, such that passive components, such as, high density capacitors are housed within the recessed groove. The stiffener structure with the recessed groove is attached to the semiconductor substrate using anisotropic conductive film (ACF) or anisotropic conductive paste (ACP). The stiffener structure with the recessed groove surrounds one or more semiconductor devices that may be formed on the semiconductor substrate. The stiffener structure with the recessed groove does not extend beyond horizontal boundaries of the semiconductor substrate.

Abstract: One feature pertains to a multi-chip package that includes a substrate and an electromagnetic interference (EMI) shield coupled to the substrate. At least one integrated circuit is coupled to a first surface of the substrate. The EMI shield includes a metal casing configured to shield the package from radio frequency radiation, a dielectric layer coupled to at least a portion of an inner surface of the metal casing, and a plurality of signal lines. The signal lines are coupled to the dielectric layer and electrically isolated from the metal casing by the dielectric layer. At least one other integrated circuit is coupled to an inner surface of the EMI shield, and at least a portion of the inner surface of the EMI shield faces the first surface of the substrate. The signal lines are configured to provide electrical signals to the second circuit component.

Abstract: Some novel features pertain to a semiconductor device that includes a substrate, a first cavity that traverses the substrate. The first cavity is configured to be occupied by a interconnect material (e.g., solder ball). The substrate also includes a first metal layer coupled to a first side wall of the first cavity. The substrate further includes a first integrated passive device (IPD) on a first surface of the substrate, the first IPD coupled to the first metal layer. In some implementations, the substrate is a glass substrate. In some implementations, the first IPD is one of at least a capacitor, an inductor and/or a resistor. In some implementations, the semiconductor device further includes a second integrated passive device (IPD) on a second surface of the substrate. The second IPD is coupled to the first metal layer.

Abstract: Some implementations provide an integrated device that includes a capacitor and an inductor. The inductor is electrically coupled to the capacitor. The inductor and the capacitor are configured to operate as a filter for an electrical signal in the integrated device. The inductor includes a first metal layer of a printed circuit board (PCB), a set of solder balls coupled to the PCB, and a second metal layer in a die. In some implementations, the capacitor is located in the die. In some implementations, the capacitor is a surface mounted passive device on the PCB. In some implementations, the first metal layer is a trace on the PCB. In some implementations, the inductor includes a third metal layer in the die. In some implementations, the second metal layer is an under bump metallization (UBM) layer of the die, and the third metal is a redistribution layer of the die.

Abstract: A planar capacitor includes, in part, a first metal line forming spiral-shaped loops around one of its end point, and a second metal line forming spiral-shaped loops between the loops of the first metal line. The first and second metal lines are coplanar, formed on an insulating layer, and form the first and second plates of the planar capacitor. The planar capacitor may be used to form a filter. Such a filter includes a first metal line forming first spiral-shaped loops, a second metal line forming second spiral-shaped loops, and a third metal line—coplanar with the first and second metal lines—forming loops between the loops of the first and second metal lines. The filter further includes a first inductor coupled between the first and third metal lines, and a second inductor coupled between the second and third metal lines.

Abstract: One feature pertains to a multi-chip package that includes a substrate and an electromagnetic interference (EMI) shield coupled to the substrate. At least one integrated circuit is coupled to a first surface of the substrate. The EMI shield includes a metal casing configured to shield the package from radio frequency radiation, a dielectric layer coupled to at least a portion of an inner surface of the metal casing, and a plurality of signal lines. The signal lines are coupled to the dielectric layer and electrically isolated from the metal casing by the dielectric layer. At least one other integrated circuit is coupled to an inner surface of the EMI shield, and at least a portion of the inner surface of the EMI shield faces the first surface of the substrate. The signal lines are configured to provide electrical signals to the second circuit component.

Abstract: The present invention comprises a metal graphic formed on a surface (2), wherein said graphic comprises discrete wire elements (1) that are attached to said surface.

Abstract: An electrical contact device is provided for electrically grounding an uninsulated end-portion of insulated wire stored on a spool driven by a device comprises the following. An electrical connector fixes to the spool and is configured to receive an electrical connection with the uninsulated end-portion of said insulated wire. A stationary electrical contact is provided for connecting to a ground. The stationary electrical contact is further configured to be placed about the shaft. A conductive bearing is also provided. The conductive bearing is configured to be placed about the shaft and between the electrical connector and the electrical contact. The conductive bearing electrically couples the electrical connector to said stationary electrical contact, thereby providing said ground to said uninsulated end-portion of said insulated bond wire. A wire-bonder including such a contact device and a method for making such a wire-bonder are also provided.

Abstract: A process for bonding insulated wires is provided wherein a conforming free air ball is formed from an insulated wire to create a ball bond. A tip of the insulated wire is first positioned close to an electronic flame-off device and a first electric discharge is produced from the electronic flame-off device to melt the tip of the insulated wire and produce a pilot ball. The electric discharge is then terminated. A second electric discharge is then generated to produce the conforming free air ball, and thereafter, the conforming free air ball is attached to a bonding surface to create the ball bond.

Abstract: A microchip wire bonder for bonding insulated bond wire to a surface, the microchip wire bonder comprising: a) a body having a stationary electrical contact configured to receive an electrical potential; b) a bond head attached to the body, to position the insulated bond wire adjacent to the surface; c) a rotating wire spooler attached to the body, to hold the insulated bond wire and to advance the insulated bond wire from the spooler to the bond head as needed; and d) an electrical contact device comprising: i) a rotating electrical connector fixed to the rotating wire spooler and being sized and shaped to receive an electrical connection with an uninsulated portion of the insulated bond wire at one end, and having a moving electrical contact at the other end, the two ends being electrically connected; and ii) a conductive bearing configured to electrically couple the moving electrical contact of the electrical connector and the stationary electrical contact; wherein, upon connecting the stationary electrica