Abstract: The invention relates to a semiconductor device and a method of fabricating the same, wherein a storage node contact hole is made large to solve any problem caused during etching a storage node contact hole with a small CD, a landing plug is formed to lower plug resistance, and the SAC process is eliminated at the time of the bit line formation. A method of fabricating a semiconductor device according to the invention comprises: forming a device isolation film for defining a multiplicity of active regions in a semiconductor substrate; forming a multiplicity of buried word lines in the semiconductor substrate; forming a storage node contact hole for exposing a storage node contact region of two adjoining active regions; filling the storage node contact hole with a storage node contact plug material; forming a bit-line groove for exposing a bit-line contact region of the active region and splitting the storage node contact plug material into two; and burying the bit line into the bit-line groove.

Abstract: The sterilizing vacuum cleaner for bed clothes includes a housing including an ultraviolet (UV) irradiating space depressed into a bottom surface thereof, a suction port formed in the UV irradiating space, a discharge port formed in a side surface thereof, an air passage for connecting the suction port and the discharge port, and a sticking prevention passage depressed into the bottom extending to the side surface to prevent an object to be sterilized from adhering to the bottom surface. A first UV light emitter is installed in the housing to irradiate ultraviolet rays to the UV irradiating space of the housing.

Abstract: A semiconductor device includes a gate formed on a semiconductor substrate. A first junction region is formed on a first side of the gate and a second junction region formed on a second side of the gate. A bit line is formed over the gate to be electrically coupled with the first junction region. A first metal plug is formed electrically coupling the second junction region. A bit line contact plug is provided between the first junction region and the bit line, and electrically couples the first junction region and the bit line. A second metal plug is formed over the first metal plug and electrically couples the first metal plug. The junction region of a gate in a core or peripheral region is connected to the metal line using a metal plug so that bit lines formed in the core and peripheral area can have a pattern similar to that formed in a cell region.

Abstract: A semiconductor device comprises a plurality of vertical transistors each comprising barrier metal layers corresponding to source/drain regions in which a conduction region is formed under a channel region having a pillar form, and a bit line comprising a metal layer to connect the plurality of vertical transistors.

Abstract: A method for forming a transistor of a semiconductor device, includes forming a trench by etching a semiconductor substrate on which a pad oxide film and a pad nitride film are sequentially formed; forming a isolation oxide film by filling the trench with oxide; removing an upper portion of the isolation oxide film until an upper lateral portion of the semiconductor substrate is exposed; forming a barrier nitride film over the isolation oxide film, the semiconductor substrate, and the pad nitride film; forming a sacrificial oxide film over the barrier nitride film; performing a planarization process until the pad nitride film is exposed; performing a wet etching process until the active region is exposed; forming a photoresist pattern over the active region and the barrier nitride film; and performing a dry etching process by using the photoresist pattern as an etching mask, thereby forming a recessed gate trench.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, an USG (undoped silicate glass) layer is utilized during a process of forming a capacitor to leave a hard mask layer and a polysilicon layer on the top surface of a peripheral circuit region, and then a plate electrode layer on the peripheral circuit region is removed in a subsequent process to prevent a cut fuse pattern from being oxidized, thereby improving device characteristics and reliability of the semiconductor device.

Abstract: A method for forming a transistor of a semiconductor device, includes forming a trench by etching a semiconductor substrate on which a pad oxide film and a pad nitride film are sequentially formed; forming a isolation oxide film by filling the trench with oxide; removing an upper portion of the isolation oxide film until an upper lateral portion of the semiconductor substrate is exposed; forming a barrier nitride film over the isolation oxide film, the semiconductor substrate, and the pad nitride film; forming a sacrificial oxide film over the barrier nitride film; performing a planarization process until the pad nitride film is exposed; performing a wet etching process until the active region is exposed; forming a photoresist pattern over the active region and the barrier nitride film; and performing a dry etching process by using the photoresist pattern as an etching mask, thereby forming a recessed gate trench.

Abstract: The sterilizing vacuum cleaner for bed clothes includes a housing including an ultraviolet (UV) irradiating space depressed into a bottom surface thereof, a suction port formed in the UV irradiating space, a discharge port formed in a side surface thereof, an air passage for connecting the suction port and the discharge port, and a sticking prevention passage depressed into the bottom extending to the side surface to prevent an object to be sterilized from adhering to the bottom surface. A first UV light emitter is installed in the housing to irradiate ultraviolet rays to the UV irradiating space of the housing.

Abstract: A method for forming a step channel of a semiconductor device is disclosed. The method for forming a step channel of a semiconductor device comprises forming a hard mask layer pattern defining a step channel region on a semiconductor substrate, forming a spacer on a sidewall of the hard mask layer pattern, and simultaneously etching the spacer and a predetermined thickness of the semiconductor substrate using the hard mask layer pattern and the spacer as an etching mask.

Abstract: An apparatus for controlling vehicle stability includes a pressure calculator calculating a brake pressure. In one embodiment, the calculated brake pressure is calculated based on a yaw rate signal input from a yaw rate sensor. In other embodiments, the calculated brake pressure is further calculated on the basis of signals input from a steering angle sensor, a lateral acceleration sensor, a vehicle speeds sensor, and a master brake pressure sensor. A method for controlling vehicle stability is also provided. The method and apparatus enhances stability and reliability during vehicle driving.

Abstract: An apparatus for controlling vehicle stability includes a virtual pressure calculator calculating a virtual brake pressure. In one embodiment, the virtual brake pressure is calculated based on a yaw rate signal input from a yaw rate sensor. In other embodiments, the virtual brake pressure is further calculated on the basis of signals input from a steering angle sensor, a lateral acceleration sensor, a vehicle speeds sensor, and a master brake pressure sensor. A method for controlling vehicle stability is also provided. The method and apparatus enhances stability and reliability during vehicle driving.