Abstract: A variable resistance memory device includes a memory cell connected to a bit line and a clamp circuit configured to provide either a first read voltage or a second read voltage to the bit line according to an elapsed time from a write operation of the memory cell. Related methods are also described.

Abstract: There is provided a multilayered ceramic substrate where a groove is formed in a intermediate stack having a relatively big thermal expansion coefficient or a step is formed at an edge portion of the intermediate stack so that cracks occurring due to differences in the thermal expansion coefficient among stacks is prevented from spreading to the edge portion, thereby inhibiting occurrence of edge cracks.

Abstract: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

Abstract: In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.

Abstract: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

Abstract: In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.

Abstract: A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.

Abstract: There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.

Abstract: Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration.

Abstract: A phase changeable random access memory (PRAM) and methods for manufacturing the same. An example unit cell of a non-volatile memory, such as a PRAM, includes a MOS transistor, connected to an address line and a data line, where the MOS transistor receives a voltage from the data line. The unit cell further includes a phase change material for changing phase depending on heat generated by the voltage and a top electrode, connected to a substantially ground voltage.

Abstract: A phase change memory device includes a lower electrode and a porous dielectric layer having fine pores on the lower electrode. A phase change layer is provided in the fine pores of the porous dielectric layer. An upper electrode is provided on the phase change layer. Related manufacturing methods are also described.

Abstract: A light emitting transistor comprises a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on a predetermine region of the collector layer; a collector electrode formed on the collector layer where the base layer is not formed; a first conductivity-type emitter layer formed on a predetermine region of the base layer; a base electrode formed on the base layer where the emitter layer is not formed; an emitter electrode formed on the emitter layer; a first activation layer formed between the collector layer and the base layer; and a second activation layer formed between the base layer and the emitter layer.

Abstract: A phase changeable random access memory (PRAM) and methods for manufacturing the same. An example unit cell of a non-volatile memory, such as a PRAM, includes a MOS transistor, connected to an address line and a data line, where the MOS transistor receives a voltage from the data line. The unit cell further includes a phase change material for changing phase depending on heat generated by the voltage and a top electrode, connected to a substantially ground voltage.

Abstract: A composite sheet used for artificial leather with low elongation and excellent softness which includes a non-woven fabric layer, a woven or knitted fabric layer and a polyurethane resin, wherein the non-woven fabric layer and the woven or knitted fabric layer are entangled with each other.

Abstract: According to some embodiments of the present invention, there are provided PRAMS having a phase-change layer pattern interposed between a molding layer and a forming layer pattern, and methods of forming the same that include a node conductive layer pattern, a molding layer, a forming layer pattern and a protecting layer. The molding layer, the forming layer pattern and the protecting layer are formed to cover the planarized interlayer insulating layer and the node conductive layer pattern. A lower electrode is interposed between the molding layer and the planarized interlayer insulating layer. A phase-change layer pattern is formed on the planarized interlayer insulating layer. A spacer pattern is disposed between the phase-change layer pattern and the molding layer.

Abstract: A MEMS module package using a sealing cap having heat releasing capability is disclosed, which comprises a lower substrate, a MEMS element mounted on the lower substrate, a driver integrated circuit mounted on the lower substrate adjacently to the MEMS element which operates the MEMS element, and a sealing cap positioned in contact with the lower substrate which has a MEMS-element protrusion portion in physical contact with the MEMS element and has one or more grooves for housing the MEMS element and the driver integrated circuit. The MEMS module package using a sealing cap having heat releasing capability and a manufacturing method thereof according to an aspect of the present invention utilize an effective heat releasing structure to release the heat generated in each element.

Abstract: Disclosed herein is a light modulator module package, which is advantageous because a size of the module package is minimized and heat is efficiently dispersed while the optical properties of a light modulator device are maintained.

Abstract: Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration.

Abstract: A phase changeable memory cell that includes a substrate, a bottom electrode, a phase changeable material layer pattern, and a top electrode. The bottom electrode is on the substrate. The phase changeable material layer pattern is on the bottom electrode. The top electrode is on the phase changeable material layer pattern, and has a tip that extends toward the bottom electrode.

Abstract: Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration.