Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Abstract: The present disclosure is to provide a recombinant botulinum toxin type A light chain, a recombinant botulinum toxin, and a composition, use, and method related thereto, which exhibit improved efficacy and half-life to be easier to use for patients and enable treatment that is customized to indications.

Abstract: The purpose of the present invention is to provide a recombinant botulinum toxin type A light chain in which efficacy and half-life are increased to increase patient convenience and allow for customized treatment for indications, a recombinant botulinum toxin, and a composition, use, and method related thereto.

Abstract: A millimeter-wave reflective structure configured to reflect incident millimeter waves includes: a transparent substrate defining unit cells in the form of a matrix, the transparent substrate having an upper surface; and conductive patterns arranged in the unit cells on the transparent substrate, each of the conductive patterns having a hollow rectangular shape.

Abstract: An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

Abstract: A sealing apparatus is disclosed. In some implementations, the sealing apparatus includes a process chamber having an internal space, a cell loading portion configured to load a plurality of battery cells and enter the internal space of the process chamber, a plurality of sealing units disposed in the internal space of the process chamber, the plurality of sealing units configured to partially seal the battery cells, respectively, and a driving portion configured to move the plurality of sealing units such that the plurality of sealing units come into contact with the plurality of battery cells, respectively.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A solar spectral wavelength converting material with improved efficiency and a solar cell including the same. According to an embodiment, a solar spectral wavelength converting material includes an aluminum hydroxide precursor and an aromatic ring compound or a derivative including the same.

Abstract: A display device includes a first substrate, a display structure, a sensing structure, a sensing signal transmission film, and an image signal transmission film. The first substrate includes a display region and a non-display region at least partially surrounding the display region. The non-display region includes a first portion and a second portion facing the first portion. The display structure is disposed in the display region. The sensing structure is disposed on the display structure. The sensing signal transmission film is electrically connected to the sensing structure. The image signal transmission film is electrically connected to the display structure. The sensing signal transmission film is disposed in the first portion of the non-display region. The image signal transmission film is disposed in the second portion of the non-display region.

Abstract: The present invention relates to a solar wavelength conversion material with improved efficiency, and a solar cell comprising same. According to one embodiment of the present invention, the present invention provides a solar wavelength conversion material comprising an aluminum hydroxide precursor, and a lanthanide ion or a derivative containing same.

Abstract: A display device includes a first substrate, a display structure, a sensing structure, a sensing signal transmission film, and an image signal transmission film. The first substrate includes a display region and a non-display region at least partially surrounding the display region. The non-display region includes a first portion and a second portion facing the first portion. The display structure is disposed in the display region. The sensing structure is disposed on the display structure. The sensing signal transmission film is electrically connected to the sensing structure. The image signal transmission film is electrically connected to the display structure. The sensing signal transmission film is disposed in the first portion of the non-display region. The image signal transmission film is disposed in the second portion of the non-display region.

Abstract: A display device includes a first substrate, a display structure, a sensing structure, a sensing signal transmission film, and an image signal transmission film. The first substrate includes a display region and a non-display region at least partially surrounding the display region. The non-display region includes a first portion and a second portion facing the first portion. The display structure is disposed in the display region. The sensing structure is disposed on the display structure. The sensing signal transmission film is electrically connected to the sensing structure. The image signal transmission film is electrically connected to the display structure. The sensing signal transmission film is disposed in the first portion of the non-display region. The image signal transmission film is disposed in the second portion of the non-display region.

Abstract: An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

Abstract: A solar spectral wavelength converting material with improved efficiency and a solar cell including the same. According to an embodiment, a solar spectral wavelength converting material includes an aluminum hydroxide precursor and an aromatic ring compound or a derivative including the same.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A display device includes a first substrate, a display structure, a sensing structure, a sensing signal transmission film, and an image signal transmission film. The first substrate includes a display region and a non-display region at least partially surrounding the display region. The non-display region includes a first portion and a second portion facing the first portion. The display structure is disposed in the display region. The sensing structure is disposed on the display structure. The sensing signal transmission film is electrically connected to the sensing structure. The image signal transmission film is electrically connected to the display structure. The sensing signal transmission film is disposed in the first portion of the non-display region. The image signal transmission film is disposed in the second portion of the non-display region.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A semiconductor package and a manufacturing method thereof, which can reduce the size of the semiconductor package and improve product reliability. In a non-limiting example embodiment, the method may comprise forming an interposer on a wafer, forming at least one reinforcement member on the interposer, coupling and electrically connecting at least one semiconductor die to the interposer to the interposer, filling a region between the semiconductor die and the interposer with an underfill, and encapsulating the reinforcement member, the semiconductor die and the underfill on the interposer using an encapsulant.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.