Abstract: An apparatus is provided that checks for short circuits. The apparatus includes a support plate supporting the bottom surface of a center area of an electrode assembly, a pressurization unit that includes a first pressurization member pressurizing a top surface of the center area of the electrode assembly and a second pressurization member pressurizing opposite edge areas of the electrode assembly and a short circuit measurement unit applying voltage to the electrode assembly to check for a short circuit. The pressurization unit is configured to partially pressurize the entire upper and lower surfaces of the electrode assembly per an area.

Abstract: An apparatus for image analysis includes: at least one memory storing instructions, and at least one processor configured to execute the instructions, in which, by executing the instructions, the at least one processor is configured to control: an image sensor to generate a captured image; a depth map generator to generate a depth map corresponding to the captured image; and a map analyzer to analyze an absolute distance for a first region of the depth map based on an absolute distance of a selected sub-region of the first region of the depth map, where the at least one processor is configured to control the map analyzer to determine the absolute distance for the selected sub-region based on an automatic focus function of the image sensor.

Abstract: A distance information generation apparatus includes: at least one processor, and at least one memory storing program instructions, where, by executing the program instructions, the at least one processor is configured to: divide a first image captured by an imaging device into a plurality of blocks; determine direction movement values for at least one block among the plurality of divided blocks as targets; control an imaging direction of the imaging device based on the direction movement values of the at least one block; and acquire distance information for the at least one block based on a second image captured by the imaging device.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A solar spectral wavelength converting material with improved efficiency and a solar cell including the same. According to an embodiment, a solar spectral wavelength converting material includes an aluminum hydroxide precursor and an aromatic ring compound or a derivative including the same.

Abstract: A display device includes a first substrate, a display structure, a sensing structure, a sensing signal transmission film, and an image signal transmission film. The first substrate includes a display region and a non-display region at least partially surrounding the display region. The non-display region includes a first portion and a second portion facing the first portion. The display structure is disposed in the display region. The sensing structure is disposed on the display structure. The sensing signal transmission film is electrically connected to the sensing structure. The image signal transmission film is electrically connected to the display structure. The sensing signal transmission film is disposed in the first portion of the non-display region. The image signal transmission film is disposed in the second portion of the non-display region.

Abstract: The present invention relates to a solar wavelength conversion material with improved efficiency, and a solar cell comprising same. According to one embodiment of the present invention, the present invention provides a solar wavelength conversion material comprising an aluminum hydroxide precursor, and a lanthanide ion or a derivative containing same.

Abstract: A display device includes a first substrate, a display structure, a sensing structure, a sensing signal transmission film, and an image signal transmission film. The first substrate includes a display region and a non-display region at least partially surrounding the display region. The non-display region includes a first portion and a second portion facing the first portion. The display structure is disposed in the display region. The sensing structure is disposed on the display structure. The sensing signal transmission film is electrically connected to the sensing structure. The image signal transmission film is electrically connected to the display structure. The sensing signal transmission film is disposed in the first portion of the non-display region. The image signal transmission film is disposed in the second portion of the non-display region.

Abstract: A display device includes a first substrate, a display structure, a sensing structure, a sensing signal transmission film, and an image signal transmission film. The first substrate includes a display region and a non-display region at least partially surrounding the display region. The non-display region includes a first portion and a second portion facing the first portion. The display structure is disposed in the display region. The sensing structure is disposed on the display structure. The sensing signal transmission film is electrically connected to the sensing structure. The image signal transmission film is electrically connected to the display structure. The sensing signal transmission film is disposed in the first portion of the non-display region. The image signal transmission film is disposed in the second portion of the non-display region.

Abstract: An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

Abstract: A solar spectral wavelength converting material with improved efficiency and a solar cell including the same. According to an embodiment, a solar spectral wavelength converting material includes an aluminum hydroxide precursor and an aromatic ring compound or a derivative including the same.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A display device includes a first substrate, a display structure, a sensing structure, a sensing signal transmission film, and an image signal transmission film. The first substrate includes a display region and a non-display region at least partially surrounding the display region. The non-display region includes a first portion and a second portion facing the first portion. The display structure is disposed in the display region. The sensing structure is disposed on the display structure. The sensing signal transmission film is electrically connected to the sensing structure. The image signal transmission film is electrically connected to the display structure. The sensing signal transmission film is disposed in the first portion of the non-display region. The image signal transmission film is disposed in the second portion of the non-display region.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A semiconductor package and a manufacturing method thereof, which can reduce the size of the semiconductor package and improve product reliability. In a non-limiting example embodiment, the method may comprise forming an interposer on a wafer, forming at least one reinforcement member on the interposer, coupling and electrically connecting at least one semiconductor die to the interposer to the interposer, filling a region between the semiconductor die and the interposer with an underfill, and encapsulating the reinforcement member, the semiconductor die and the underfill on the interposer using an encapsulant.

Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Abstract: A semiconductor package and a manufacturing method thereof, which can reduce the size of the semiconductor package and improve product reliability. In a non-limiting example embodiment, the method may comprise forming an interposer on a wafer, forming at least one reinforcement member on the interposer, coupling and electrically connecting at least one semiconductor die to the interposer to the interposer, filling a region between the semiconductor die and the interposer with an underfill, and encapsulating the reinforcement member, the semiconductor die and the underfill on the interposer using an encapsulant.