Patents by Inventor Young Soo Lim
Young Soo Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130234100Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.Type: ApplicationFiled: April 11, 2013Publication date: September 12, 2013Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Patent number: 8426840Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.Type: GrantFiled: October 27, 2010Date of Patent: April 23, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Patent number: 8343577Abstract: Disclosed herein are core-shell type nanoparticles comprising nanoparticle cores made of a metal or semiconductor, and shells made of crystalline metal oxide formed on the surfaces of the nanoparticle cores, as well as a preparation method thereof. According to the disclosed invention, the core-shell nanoparticles, consisting of metallic or semiconductor cores and crystalline metal oxide shells, can be prepared by epitaxially growing metal oxide on the surfaces of the metallic or semiconductor nanoparticle cores. By virtue of the crystalline metal oxide shells, the core nanoparticle made of metal or semiconductor can ensure excellent chemical and mechanical stability, and the core-shell nanoparticles can show new properties resulting from the interaction between the metal cores and the metal oxide crystal shells.Type: GrantFiled: October 5, 2010Date of Patent: January 1, 2013Assignee: LG Chem, Ltd.Inventors: Sang Ho Kim, Woo Ram Lee, Young Soo Lim
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Publication number: 20120128996Abstract: The present invention relates to a metal nanobelt and a method of manufacturing the same, and a conductive ink composition and a conductive film including the same. The metal nanobelt can be easily manufactured at a normal temperature and pressure without requiring the application of high temperature and pressure, and also can be used to form a conductive film or conductive pattern that exhibits excellent conductivity if the conductive ink composition including the same is printed onto a substrate before a heat treatment or a drying process is carried out at low temperature. Therefore, the metal nanobelt and the conductive ink composition may be applied very appropriately for the formation of conductive patterns or conductive films for semiconductor devices, displays, solar cells in environments requiring low temperature heating. The metal nanobelt has a length of 500 nm or more, a length/width ratio of 10 or more, and a width/thickness ratio of 3 or more.Type: ApplicationFiled: September 10, 2009Publication date: May 24, 2012Applicant: LG Chem LtdInventors: Won-Jong Kwon, Jae-Hong Kim, Sun-Mi Jin, Sang-Uck Lee, Young-Soo Lim
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Patent number: 8133757Abstract: A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.Type: GrantFiled: December 3, 2009Date of Patent: March 13, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-Suk Kwon, Young-Soo Lim, Sung-Un Kwon, Yong-Ho Ha, Jeong-Hee Park, Joon-Sang Park, Myung-Jin Kang, Doo-Hwan Park
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Publication number: 20110044098Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.Type: ApplicationFiled: October 27, 2010Publication date: February 24, 2011Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Publication number: 20110020650Abstract: Disclosed herein are core-shell type nanoparticles comprising nanoparticle cores made of a metal or semiconductor, and shells made of crystalline metal oxide formed on the surfaces of the nanoparticle cores, as well as a preparation method thereof. According to the disclosed invention, the core-shell nanoparticles, consisting of metallic or semiconductor cores and crystalline metal oxide shells, can be prepared by epitaxially growing metal oxide on the surfaces of the metallic or semiconductor nanoparticle cores. By virtue of the crystalline metal oxide shells, the core nanoparticle made of metal or semiconductor can ensure excellent chemical and mechanical stability, and the core-shell nanoparticles can show new properties resulting from the interaction between the metal cores and the metal oxide crystal shells.Type: ApplicationFiled: October 5, 2010Publication date: January 27, 2011Inventors: Sang Ho Kim, Woo Ram Lee, Young Soo Lim
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Patent number: 7824954Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.Type: GrantFiled: July 9, 2008Date of Patent: November 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Patent number: 7820291Abstract: Disclosed herein are core-shell type nanoparticles comprising nanoparticle cores made of a metal or semiconductor, and shells made of crystalline metal oxide formed on the surfaces of the nanoparticle cores, as well as a preparation method thereof. According to the disclosed invention, the core-shell nanoparticles, consisting of metallic or semiconductor cores and crystalline metal oxide shells, can be prepared by epitaxially growing metal oxide on the surfaces of the metallic or semiconductor nanoparticle cores. By virtue of the crystalline metal oxide shells, the core nanoparticle made of metal or semiconductor can ensure excellent chemical and mechanical stability, and the core-shell nanoparticles can show new properties resulting from the interaction between the metal cores and the metal oxide crystal shells.Type: GrantFiled: December 5, 2006Date of Patent: October 26, 2010Assignee: LG Chem, Ltd.Inventors: Sang Ho Kim, Woo Ram Lee, Young Soo Lim
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Publication number: 20100144135Abstract: A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.Type: ApplicationFiled: December 3, 2009Publication date: June 10, 2010Applicant: Samsung Electronics Co., Ltd.Inventors: Hyun-Suk Kwon, Young-Soo Lim, Sung-Un Kwon, Yong-Ho Ha, Jeong-Hee Park, Joon-Sang Park, Myung-Jin Kang, Doo-Hwan Park
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Patent number: 7659162Abstract: A method of manufacturing a phase change memory device includes forming at least one active device on a substrate, forming a bottom electrode electrically connected to the at least one active device, forming a phase change material layer and a top electrode on the bottom electrode, forming a capping layer on an upper surface of the top electrode and on side surfaces of the top electrode and phase change material layer, removing a portion of the capping layer overlapping the upper surface of the top electrode to define capping layer sidewall portions, forming an interlayer insulation film on the capping layer sidewall portions and on the top electrode, removing a portion of the interlayer insulation film from the top electrode to form a contact hole through the interlayer insulation film, and forming a contact plug in the contact hole.Type: GrantFiled: October 8, 2008Date of Patent: February 9, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Soo Lim, Yong-Sun Ko, Sung-Un Kwon, Jae-Seung Hwang
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Publication number: 20090283741Abstract: The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.Type: ApplicationFiled: July 24, 2009Publication date: November 19, 2009Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Soo Lim, Jun-Soo Bae
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Patent number: 7582568Abstract: The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.Type: GrantFiled: January 19, 2007Date of Patent: September 1, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Soo Lim, Jun-Soo Bae
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Patent number: 7569430Abstract: The present invention relates to a phase changeable structure having decreased amounts of defects and a method of forming the phase changeable structure. A stacked composite is first formed by (i) forming a phase changeable layer including a chalcogenide is formed on a lower electrode, (ii) forming an etch stop layer having a first etch rate with respect to a first etching material including chlorine on the phase changeable layer, and (iii) forming a conductive layer having a second etch rate with respect to the first etching material on the etch stop layer. The conductive layer of the stacked composite is then etched using the first etching material to form an upper electrode. The etch stop layer and the phase changeable layer are then etched using a second etching material that is substantially flee of chlorine to form an etch stop pattern and a phase changeable pattern, respectively.Type: GrantFiled: February 13, 2007Date of Patent: August 4, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Jun-Soo Bae, Hideki Horii, Ji-Hye Yi, Young-Soo Lim
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Publication number: 20090090899Abstract: A method of manufacturing a phase change memory device includes forming at least one active device on a substrate, forming a bottom electrode electrically connected to the at least one active device, forming a phase change material layer and a top electrode on the bottom electrode, forming a capping layer on an upper surface of the top electrode and on side surfaces of the top electrode and phase change material layer, removing a portion of the capping layer overlapping the upper surface of the top electrode to define capping layer sidewall portions, forming an interlayer insulation film on the capping layer sidewall portions and on the top electrode, removing a portion of the interlayer insulation film from the top electrode to form a contact hole through the interlayer insulation film, and forming a contact plug in the contact hole.Type: ApplicationFiled: October 8, 2008Publication date: April 9, 2009Inventors: Young-Soo Lim, Yong-Sun Ko, Sung-Un Kwon, Jae-Seung Hwang
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Publication number: 20090017577Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.Type: ApplicationFiled: July 9, 2008Publication date: January 15, 2009Inventors: Hyeong-Geun An, Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim, Gyeo-Re Lee, Joon-Sang Park, Han-Bong Ko, Young-Lim Park
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Publication number: 20080035170Abstract: In a cleaning apparatus and a method of cleaning a chamber used in manufacturing a semiconductor device, a first plasma may be provided into a chamber to remove a first residue from an inner wall of the chamber where the first residue is attached. A second plasma may then be provided into the chamber to remove a second residue formed by the first plasma from an inside of the chamber where the second residue remains. The second residue formed by the first plasma used to clean the chamber may not pollute a semiconductor substrate located in the chamber.Type: ApplicationFiled: July 25, 2007Publication date: February 14, 2008Inventors: Kye-Hyun Baek, Jong-Hoon Kang, Yong-Jin Kim, Young-Soo Lim
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Publication number: 20070224796Abstract: The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.Type: ApplicationFiled: January 19, 2007Publication date: September 27, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Soo LIM, Jun-Soo BAE
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Publication number: 20070210334Abstract: Example embodiments relate to a semiconductor memory device and a method of fabricating the same. Other example embodiments relate to a phase change memory device and a method of fabricating the same. There are provided a phase change memory device and a method of fabricating the same for improving or maximizing a production yield. The method comprises: after first removing a first hard mask layer used to form a contact pad electrically connected to a semiconductor substrate, forming a lower electrode to be electrically connected to the contact pad through a first contact hole in a first interlayer insulating layer formed on the contact pad and to have a thickness equal or similar to a thickness of the first interlayer insulating layer; and forming a phase change layer and an upper electrode on the lower electrode.Type: ApplicationFiled: January 26, 2007Publication date: September 13, 2007Inventors: Young-Soo Lim, Yong-Sun Ko, Hyuk-Jin Kwon, Jae-Seung Hwang
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Publication number: 20070190683Abstract: The present invention relates to a phase changeable structure having decreased amounts of defects and a method of forming the phase changeable structure. A stacked composite is first formed by (i) forming a phase changeable layer including a chalcogenide is formed on a lower electrode, (ii) forming an etch stop layer having a first etch rate with respect to a first etching material including chlorine on the phase changeable layer, and (iii) forming a conductive layer having a second etch rate with respect to the first etching material on the etch stop layer. The conductive layer of the stacked composite is then etched using the first etching material to form an upper electrode. The etch stop layer and the phase changeable layer are then etched using a second etching material that is substantially flee of chlorine to form an etch stop pattern and a phase changeable pattern, respectively.Type: ApplicationFiled: February 13, 2007Publication date: August 16, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jun-Soo BAE, Hideki HORII, Ji-Hye YI, Young-Soo LIM