Abstract: An embodiment is a circuit including 2n?1 first comparators to generate a first result by comparing data from at least two of 2n memory cells to which test pattern data are written. 2n?1 first switching circuits provide the first result or a disable signal responsive to a first switching signal. And 2n?2 second comparators generate a second result by comparing signals output from some of the 2n?1 first switching circuits. N may be a natural number greater than or equal to three.

Abstract: An apparatus for and method of adapting a bitstream to which scalable video coding (SVC) technology is applied are provided. The apparatus for adapting a bitstream includes: an Adaptation QoS information extraction unit extracting SVC adaptation operators, and relationships between the SVC adaptation operators and the usage environment information of a terminal from the Adaptation QoS information on the bitstream to which SVC technology is applied; an Adaptation Decision Taking Engine(ADTE) unit determining the SVC adaptation operators corresponding to the usage environment of the terminal receiving the transmitted bitstream among the SVC adaptation operators; and a SVC bitstream extraction unit extracting the bitstream based on the determined SVC adaptation operator.

Abstract: A method of waterproof and floor construction by using thixotropic urethane and fabric sheet includes the steps of applying a primer on a base concrete surface to form a primer layer; disposing waterproof fiber sheets on the primer layer with an interval in the range of 5 to 10 mm and connecting the intervals with tapes to form a fiber sheet layer; applying thixotropic urethane having viscosity in the range of 900,000 to 1,000,000 CP onto the fiber sheet layer; and spraying super high speed hardening type resin onto the thixotropic urethane to form a coating layer.

Abstract: Compression stress applying portions 20 of SiGe film are formed in the source/drain regions of the p-MOSA region 30a. Then, impurities are implanted in the p-MOS region 30a and the n-MOS region 30b to form shallow junction regions 22a, 22b and deep junction regions 23a, 23b. The impurity in the shallow junction regions 22a, 22b is prevented from being diffused immediately below the gate insulation film 15 by the thermal processing in forming the SiGe film, the short channel effect is prevented, and the hole mobility of the channel region of the p-MOS transistor 14a. The operation speed of the p-MOS transistor 13a is balanced with that of the n-MOS transistor, whereby the operation speed of the complementary semiconductor device 10 can be increased. The semiconductor device fabricating method can increase and balance the operation speed of a p-transistor with that of an n-transistor.

Abstract: A disclosed semiconductor device includes a gate electrode that is arranged on a substrate via a gate dielectric film. A gate electrode head is formed on the gate electrode, which gate electrode head is wider than the gate electrode, and extends between a first side wall dielectric film and a second side wall dielectric film that are formed on the same sides as first and second sides of the gate electrode, respectively. A first diffusion region is formed in the substrate on the same side as the first side of the gate electrode and a second diffusion region is formed in the substrate on the same side as the second side of the gate electrode. The gate electrode includes polysilicon at least at a bottom part in contact with the gate dielectric film.

Abstract: A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.

Abstract: A drum type washing machine has an access hole and a drum door for closing the access hole provided on the cylindrical sidewall of the drum. The enclosure of the washing machine includes an access opening that aligns with the assess hole of the drum. A motor of the washing machine is coupled to both the drum door and the drum itself. Thus, the motor can be used to rotate the drum and the door during washing operations. A clutch unit selectively couples and decouples the motor from the drum so that the drum door can be rotated with respect to the drum to open and close the access hole of the drum.

Abstract: A method and apparatus are provided for updating software by patching a previous version file to a new version file without creating a new file during a patch operation. The method of creating a delta file for updating software comprises: creating a delta file, which comprises a COPY command and an ADD command that are based on a difference between a previous version file and a new version file, by moving a window according to a sliding window method and expanding a size of the window to include data of the previous version file which will be replaced and deleted according to the ADD command while creating the delta file.

Abstract: An apparatus and method for automatic update are provided. The method includes storing authentication information for data, including first and second data, receiving the first data from the device, performing an authentication of the first data using the authentication information, and determining whether to receive the data, including the first data and the second data, according to the authentication.

Abstract: The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 with the gate electrode 20 as the mask to form dopant diffused regions 28, 36; the step of forming a silicon oxide film 38 on the semiconductor substrate 10, covering the gate electrodes 20; anisotropically etching the silicon oxide film 38 to form sidewall spacers 42 including the silicon oxide film 38 on the side walls of the gate electrode 20. In the step of forming a silicon oxide film 38, the silicon oxide film 38 is formed by thermal CVD at a 500–580° C. film forming temperature, using bis(tertiary-butylamino)silane and oxygen as raw materials.

Abstract: The present invention relates to low and medium molecular weight isoflavone-?-D-glucan produced by submerged liquid culture of Agaricus blazei, a method of producing the isoflavone-?-D-glucan using autolysis enzyme of Agaricus blazei mycelia, and use of the isoflavone-?-D-glucan for anti-cancer and immunoenhancing effect.

Abstract: An embodiment is a circuit including 2n-1 first comparators to generate a first result by comparing data from at least two of 2n memory cells to which test pattern data are written. 2n-1 first switching circuits provide the first result or a disable signal responsive to a first switching signal. And 2n-2 second comparators generate a second result by comparing signals output from some of the 2n-1 first switching circuits. N may be a natural number greater than or equal to three.

Abstract: The present invention relates to a reactive blue dye, and more particularly to a reactive blue dye represented by the following Formula 1, which is effective in black dyeing or printing of polyamide textiles, in particular, nylon fiber, wherein M is a hydrogen atom or an alkali metal atom. The blue dye of the present invention offers superior color yield, reactivity, fixing efficiency, light fastness, and washing fastness, substantivity, and superior cleaning properties over unfixed dyes.

Abstract: The present invention relates to a reactive blue dye, and more particularly to a reactive blue dye represented by the following Formula 1, which is effective in black dyeing or printing of polyamide textiles, in particular, nylon fibre, 1

Abstract: The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 with the gate electrode 20 as the mask to form dopant diffused regions 28, 36; the step of forming a silicon oxide film 38 on the semiconductor substrate 10, covering the gate electrodes 20; anisotropically etching the silicon oxide film 38 to form sidewall spacers 42 including the silicon oxide film 38 on the side walls of the gate electrode 20. In the step of forming a silicon oxide film 38, the silicon oxide film 38 is formed by thermal CVD at a 500-580° C. film forming temperature, using bis(tertiary-butylamino)silane and oxygen as raw materials.