Abstract: Disclosed herein are a remote node and a telephone station terminal in a passive optical network (PON). The remote node includes an optical circulator that transmits downlink signals input from a downlink optical backbone network to a wavelength distributor and transmits uplink signals input from the wavelength distributor to an uplink optical backbone network different from a downlink optical backbone network; and a wavelength distributor that distributes the downlink signal input from the optical circulator into a plurality of wavelengths to be connected to an optical distribution network and connects the uplink signals input from the optical distribution network to the optical circulator.

Abstract: A method of transmitting an Operations, Administration and Maintenance (OAM) message and of processing an error in a Passive Optical Network (PON) system is provided. Using an OAM packet format that may be used in common in the PON system, a process of transmitting or receiving an OAM message may be simplified, an efficiency of the process may be increased, and an Optical Network Unit (ONU) may be managed at a high speed.

Abstract: Provided is an optical line terminator (OLT) to recover packet data and a clock from an optical signal including a silent interval. The OLT may receive packet data and a clock from at least one optical network unit (ONU). Even in a silent interval in which the at least one ONU does not transmit packet data, the OLT may successfully recover the clock.

Abstract: An optical subscriber network for power reduction is provided. The optical subscriber network may include an Optical Line Terminal (OLT) and an Optical Network Terminal (ONT). The OLT may manage a plurality of ONTs by classifying the plurality of ONTs into a sleep group, and may multicast a sleep allowance message only to ONTs included in a predetermined sleep group.

Abstract: Apparatus for displaying information from at least one information source, the information being arranged, labeled or indexed to define a hierarchical information structure, the apparatus comprising: a display controller for displaying information and user selectable menu items on at least one display, each menu item corresponding to a node of the information hierarchy or to information in the at least one information source. The display controller is configured such that during said navigation, in response to a user selection of a menu item from either one of the first or second display areas, a sub-set of menu items corresponding to sub-nodes and/or information in the information hierarchy at the level of the hierarchy below said selected menu item is displayed in the other of the second or first display areas.

Abstract: Apparatus for displaying information from an information source, the information being indexed by nodes in a hierarchical structure, the apparatus comprising: at least one display for displaying information from the information source; a user input device for receiving a user-selectable forward navigation selection, a user-selectable back navigation selection and a user-selectable mode switch selection; and a controller for implementing a plurality of alternative navigation strategies to allow a user to navigate through at least part of the hierarchical structure using said forward navigation selection and said back navigation selection in order to display user-selected information from the information source on said at least one display, the controller being configured to switch from a currently selected navigation strategy to another of said alternative navigation strategies in response to reception of said user-selectable mode switch selection, wherein each navigation strategy comprises one or more rules d

Abstract: A hand held device for displaying information, the hand held device comprising: at least one information store storing information, the information being indexed or arranged by an indexing scheme or arrangement that defines an information hierarchy; a display for displaying information retrieved from said information store, and user selectable menu items corresponding to information available from said information store; a user input device for receiving user selections of displayed menu items; and a display controller for controlling said display to display at least a currently selected menu item from any level of the hierarchy in a first area and information corresponding to the currently selected menu item in a second area separate from the first area, and for displaying further menu items corresponding to a level in the hierarchy in said second area to replace at least a part of the displayed information when a user selection of a menu item from said first area is received, and overwriting the further men

Abstract: Apparatus for retrieving information from at least one information source, the information being indexed or arranged by an indexing scheme or arrangement that defines an information hierarchy, the apparatus comprising: a display for displaying information and user selectable menu items; a user input device for receiving user selections of displayed menu items; retrieving means for retrieving information from said information source(s); said information source(s) containing information at a plurality of hierarchical levels, said information being distinct from a name of said displayable menu items; and a display controller adapted to control said display in dependence upon received user selections to display said menu items as history menu items indicating received user selections corresponding to navigation down levels of the hierarchy of said information source(s), and new menu items corresponding to information available at a next level of the hierarchy of said information source(s); wherein said retrieving

Abstract: A hydrogenated SiOC thin film fabrication method includes supplying bis-trimethylsilylmethane and oxygen retaining gas to a wafer installed inside a reaction channel through one supply pipe, simultaneously or sequentially supplying hydrogen to the wafer through another supply pipe, applying RF power in the range of 100 W˜2000 W while supplying those gases and generating a plasma of those gases. During a post process such as oxygen ashing, carbon loss of SiOC film is minimized due to the supplied hydrogen.

Abstract: In a PECVD (plasma enhanced chemical vapor deposition) apparatus including a reaction chamber; plural susceptors installed inside the reaction chamber and horizontally mounted with a wafer respectively; a heating means for heating the susceptors; a power supply unit installed outside of the reaction chamber; a plasma electrode receiving RF power from the power supply unit, generating and maintaining plasma inside the reaction chamber; and a rotation jet spray having two spray injectors horizontally rotating and supplying gas inside the reaction chamber, a thin film is deposited by supplying BTMSM vapor and oxygen retaining gas through the spray injector, supplying hydrogen retaining gas through the other spray injector and horizontally rotating the spray injectors in the supply. Herein, a pressure in the reaction chamber is in the range of 0.1 Torr˜1 Torr, the wafer is heated at 25° C.˜400° C., and RF power in the range of 100 W˜2000 W is applied.

Abstract: An apparatus for a semiconductor device includes: a chamber having upper and lower portions, a volume of the lower portion being greater than a volume of the upper portion; a susceptor in the chamber, the susceptor having a substrate on a top surface thereof; an injector injecting process gases into the chamber; a coil unit over the chamber; a radio frequency power supply connected to the coil unit; and an exhaust through the chamber.

Abstract: In a PECVD (plasma enhanced chemical vapor deposition) apparatus including a reaction chamber; plural susceptors installed inside the reaction chamber and horizontally mounted with a wafer respectively; a heating means for heating the susceptors; a power supply unit installed outside of the reaction chamber; a plasma electrode receiving RF power from the power supply unit, generating and maintaining plasma inside the reaction chamber; and a rotation jet spray having two spray injectors horizontally rotating and supplying gas inside the reaction chamber, a thin film is deposited by supplying BTMSM vapor and oxygen retaining gas through the spray injector, supplying hydrogen retaining gas through the other spray injector and horizontally rotating the spray injectors in the supply. Herein, a pressure in the reaction chamber is in the range of 0.1 Torr˜1 Torr, the wafer is heated at 25° C.˜400° C., and RF power in the range of 100 W˜2000 W is applied.

Abstract: A plasma process chamber is monitored for excess current while fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether the detected current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when the detected current is more than the reference value. It is thereby possible to produce more stable plasma and the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.

Abstract: The present invention provides a method and system of monitoring a plasma process chamber during fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether said current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when said current is more than the reference value. Therefore in the present invention, it is possible to produce more stable plasma and then the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.

Abstract: A unipolar electrostatic chuck includes a metal electrode receiving a power supply and a dielectric layer formed on the metal electrode, on which a wafer is mounted, a conductive material being doped on the dielectric layer. Silicon carbide or titanium oxide may be used as the conductive material, and alumina or AIN may be used as a material of the dielectric layer. Dechucking can be made for the wafer even without plasma.

Abstract: In a PECVD (plasma enhanced chemical vapor deposition) apparatus including a reaction chamber; plural susceptors installed inside the reaction chamber and horizontally mounted with a wafer respectively; a heating means for heating the susceptors; a power supply unit installed outside of the reaction chamber; a plasma electrode receiving RF power from the power supply unit, generating and maintaining plasma inside the reaction chamber; and a rotation jet spray having two spray injectors horizontally rotating and supplying gas inside the reaction chamber, a thin film is deposited by supplying BTMSM vapor and oxygen retaining gas through the spray injector, supplying hydrogen retaining gas through the other spray injector and horizontally rotating the spray injectors in the supply. Herein, a pressure in the reaction chamber is in the range of 0.1 Torr˜1 Torr, the wafer is heated at 25° C.˜400° C., and RF power in the range of 100 W˜2000 W is applied.

Abstract: An HDP-CVD apparatus includes: a reactive chamber constructed with a lower chamber with an opened upper portion and a ceramic dome covering the upper portion of the lower chamber; a gas discharge pipe installed at the lower chamber; an RF coil installed to cover an outer wall of the ceramic dome; a gas injection pipe inserted into a wall of the ceramic dome through a marginal end portion of the ceramic dome from the outside of the reactive chamber, guided to the middle portion of the ceramic dome, and come out in the internal space of the reactive chamber at the middle portion of the ceramic dome; and a substrate support installed inside the reactive chamber in order to mount a substrate. Since the process gas is pre-heated, a reactivity is improved and a very high density plasma can be obtained.

Abstract: A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.

Abstract: A semiconductor device fabrication apparatus includes: a reactive chamber having a gas discharge hole and providing a reactive space therein closed against the outside; a susceptor installed inside the reactive chamber for mounting a substrate, a target of a process; and a plurality of gas injection holes arranged in a ring shape along an inner wall of the reactive chamber, wherein an outer annular passage and an inner annular passage are formed along the side wall inside the side wall of the reactive chamber, the outer annular passage and the inner annular passage are connected to each other by means of a connection passage, the outer annular passage is connected to the outside of the reactive chamber through a gas supply pipe and the inner annular passage is connected to the inside of the reactive chamber through a plurality of gas supply pipes.

Abstract: A semiconductor device manufacturing apparatus using plasma and a thin film forming method using the apparatus. The apparatus comprises a chamber provided with an inlet and an outlet of gas, the chamber having an upper part with a dome configuration; a susceptor provided in the chamber to permit a wafer to be placed thereon; and a plasma electrode to which RF power is applied to form plasma in the chamber; wherein the plasma electrode has a dome configuration to cover the upper part, and wherein the upper polar part of the electrode is cut horizontally to form an opening. According to the present invention, it is possible to form thin film having not only good thickness uniformity but also excellent film quality.