Abstract: A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.

Abstract: A semiconductor integrated circuit includes a first voltage line to which a first ground voltage is applied, a second voltage line to which a second ground voltage is applied, a third voltage line to which a first power supply voltage is applied, and a coupling unit including a MOS transistor having a source coupled to the first voltage line, a drain coupled to the second voltage line, and a gate coupled to the third voltage line.

Abstract: A semiconductor integrated circuit apparatus includes a semiconductor substrate, a plurality of signal lines, and at least one interface member. The signal lines are disposed on the semiconductor substrate. The interface member is disposed in the semiconductor substrate between the adjacent signal lines among the signal lines to pierce the semiconductor substrate.

Abstract: In a particle focusing apparatus and a method for focusing particles, the particle focusing apparatus includes a channel, a fixing member, a fluid feeding portion and a power supply. The channel has first and second ends and extends substantially in a line. The fixing member includes a first fixing portion connected to and fixing the first end, and a second fixing portion connected to and fixing the second end. The fluid feeding portion feeds fluid having particles into the channel. The power supply has first and second terminals. The first terminal passes through the first fixing portion and is electrically connected to an anode of the power supply. The second terminal passes through the second fixing portion and is electrically connected to a cathode of the power supply. Thus, particles fed into the channel may be more easily and efficiently focused to a central region inside the channel.

Abstract: Provided are a method for fabricating a capacitor and a semiconductor device using the same. The semiconductor device includes a MOS transistor capacitor, first and second plate capacitors, and a metal interconnection. The MOS transistor capacitor is arranged between a power supply and a ground. The first and second plate capacitors are arranged between the power supply and the ground. The metal interconnection is configured to connect the first and second plate capacitors.

Abstract: A semiconductor device includes a MOS capacitor including a gate, a source, and a drain, a cylinder capacitor including a top electrode, a dielectric layer, and a bottom electrode, and a metal interconnection that connects the gate to the bottom electrode.

Abstract: A semiconductor integrated circuit includes a first voltage line to which a first ground voltage is applied, a second voltage line to which a second ground voltage is applied, a third voltage line to which a first power supply voltage is applied, and a coupling unit including a MOS transistor having a source coupled to the first voltage line, a drain coupled to the second voltage line, and a gate coupled to the third voltage line.

Abstract: A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.

Abstract: Provided is an MCP including a plurality chips stacked therein. Each of the chips includes a plurality of inductor pads configured to transmit power or signals, and at both sides of a reference inductor pad, a first and a second inductor pads are formed to generate magnetic fluxes in different directions from each other.

Abstract: In a particle focusing apparatus and a method for focusing particles, the particle focusing apparatus includes a channel, a fixing member, a fluid feeding portion and a power supply. The channel has first and second ends and extends substantially in a line. The fixing member includes a first fixing portion connected to and fixing the first end, and a second fixing portion connected to and fixing the second end. The fluid feeding portion feeds fluid having particles into the channel. The power supply has first and second terminals. The first terminal passes through the first fixing portion and is electrically connected to an anode of the power supply. The second terminal passes through the second fixing portion and is electrically connected to a cathode of the power supply. Thus, particles fed into the channel may be more easily and efficiently focused to a central region inside the channel.

Abstract: The present invention relates to a polypropylene resin composition comprising polypropylene resin, wollastonite as inorganic filler, modified polypropylene which is grafted by maleic anhydride, dispersing agent. The present invention has an excellent surface hardness and scratch resistance.

Abstract: The polyolefin resin composition of the present invention includes 100 parts by weight polypropylene, 5 to 45 parts by weight inorganic filler, and 2 to 20 parts by weight silicon-grafted polyethylene. The polyolefin resin composition of the present invention is useful as a material of construction for various kinds of housings for electronic appliances and automobile parts since the resin exhibits better scratch resistance, resin fluidity, and moldability than prior art polyolefin resin compositions while maintaining mechanical properties.

Abstract: A portable computer is provided that has a monitor pivotally mounted onto a main body. The base of the main body have holes that can receive a fastener. On the sides of the main body are receptacles that are positioned near a corresponding hole in the base of the main body of the computer.An L-shaped member forms a connector that allows a strap to be attached to the portable computer to allow the computer to be more easily transported. The L shaped member has a bore on one leg and a boss on the other leg. To attach the connector the boss is inserted into a receptacle in the side of the main body and the bore of the connector is aligned over a hole in the base of the main body. Then, a fastener is inserted through the bore and into the hole in the base of the main body.On a portion of the connector is a bail shaped member that forms a chute between the member and the connector. A strap can be attached to the bail shaped member to simplify the transporting of the portable computer.

Abstract: A portable computer is provided that has hand grips on both sides of the main body of the computer. The hand grips allow the computer to be carried with two hands when the display screen is in an open position and allow the computer to be carried with one hand when the display screen is in a closed position. Additionally, a rubber bumper may be installed around the hand grips and the side of the main body of the computer to increase the ability of the computer to withstand impacts with foreign object. Furthermore, the computer may be designed with any one of an elliptical prism shape, a circular prism shape, and an oblong prism shape to further reduce the stress experienced by the computer when the computer undergoes an impact with a foreign object.For situations when a user wishes to transport the laptop computer without holding the computer in either hand, a shoulder strap may be fastened to the hand grips to allow the computer to be carried over a shoulder.

Abstract: The present invention relates to a portable computer with endurance against shock by attachment of a shock-absorber to the portable computer. The external shock to the portable computer during transport is absorbed by a shock-absorber which is attached to the portable computer so as to cover an external case, an edge part of a cover case of the external case, and an established area of a main body case.

Abstract: Gamma titanium aluminide alloys having the composition Ti-(45.5-47.5)Al-(0-3.0)X-(1-5)Y-(0.05-1.0)W, where X is Cr, Mn or any combination thereof, and Y is Nb, Ta or any combination thereof (at %), are treated to provide specific microstructures. To obtain duplex microstructures, the annealing temperature (T.sub.a) range is the eutectoid temperature (T.sub.e)+100.degree. C. to the alpha transus temperature (T.sub..alpha.)-30.degree. C.; to obtain nearly lamellar microstructures, the annealing temperature range is T.sub..alpha. -20.degree. C. to T.sub..alpha. -1.degree. C.; to obtain fully lamellar microstructures, the annealing temperature range is T.sub..alpha. to T.sub..alpha. +50.degree. C. The times required for producing these microstructures range from 0.25 to 15 hours, depending on the desired microstructure, alloy composition, annealing temperature selected, material section size and grain size desired.

Abstract: Gamma titanium aluminide alloys having the composition Ti--(45.5-47.5)Al--(0-3.0)X--(1-5)Y--(0.05-1.0)W, where X is Cr, Mn or any combination thereof, and Y is Nb, Ta or any combination thereof (at %), are treated to provide specific microstructures. To obtain duplex microstructures, the annealing temperature (T.sub.a) range is the eutectoid temperature (T.sub.e)+100.degree. C. to the alpha transus temperature (T.sub..alpha.)-30.degree. C.; to obtain nearly lamellar microstructures, the annealing temperature range is T.sub..alpha. -20.degree. C. to T.sub..alpha. -1.degree. C.; to obtain fully lamellar microstructures, the annealing temperature range is T.sub..alpha. to T.sub..alpha. +50.degree. C. The times required for producing these microstructures range from 0.25 to 15 hours, depending on the desired microstructure, alloy composition, annealing temperature selected, material section size and grain size desired.

Abstract: Gamma titanium aluminide alloy articles having improved properties are produced by the following methods:The first of these methods comprises the steps of: (a) heat treating an alloy billet or preform at a temperature in the approximate range of T.sub..alpha. to T.sub..alpha. +100.degree. C. for about 0.5 to 8 hours, (b) shaping the billet at a temperature between T.sub..alpha. -30.degree. C. and T.sub..alpha. to produce a shaped article, and (c) aging the thus-shaped article at a temperature between about 750.degree. and 1050.degree. C. for about 2 to 24 hours.The second method comprises (a) rapidly preheating an alloy preform to a temperature in the approximate range of T.sub..alpha. to T.sub..alpha. +100.degree. C., (b) shaping the billet at a temperature between T.sub..alpha. and T.sub..alpha. +100.degree. C. to produce a shaped article, and (c) aging the thus-shaped article at a temperature between about 750.degree. and 1050.degree. C. for about 2 to 24 hours.

Abstract: A first method for producing articles of gamma titanium alumide alloy having improved properties comprises the steps of: (a) shaping the article at a temperature between the titanium-aluminum eutectoid temperature of the alloy and the alpha-transus temperature of the alloy, and (b) aging the thus-shaped article at a temperature between about 750.degree. and 1050.degree. C. for about 4 to 150 hours. Shaping is preferably carried out at a temperature about 0.degree. to 50.degree. C. below the alpha-transus temperature.A second method for producing articles of gamma titanium aluminide alloy having improved properties comprises the steps of: (a) shaping the article at a temperature in the approximate range of about 130.degree. C. below the titanium-aluminum eutectoid temperature of the alloy to about 20.degree. C.

Abstract: Methods are presented to produce duplex (DP) microstructures, nearly lamellar (NL) microstructures, and fully TMT lamellar (TMTL) microstructures in gamma titanium aluminide alloy articles. The key step for obtaining a specific type of microstructure is the post-hot work annealing treatment at a temperature in a specific range for the desired microstructure. The annealing temperatures range from Te+100° C. to T&agr;−25° C. for duplex (DP) microstructures, from T&agr;−25° C. to T&agr;−5° C. for nearly lamellar (NL) microstructures, and from T&agr; to T&agr;+60° C. for fully TMT lamellar (TMTL) microstructures, where Te is the titanium-aluminum eutectoid temperature of the alloy and T&agr; is the alpha transus temperature of the alloy. The times required for producing specific microstructures range from 2 min to 15 hours depending on microstructural type, alloy composition, annealing temperature selected, material section size, and desired grain-size.