Patents by Inventor Young-Won Kim

Young-Won Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040082696
    Abstract: The present invention relates to a polypropylene resin composition comprising polypropylene resin, wollastonite as inorganic filler, modified polypropylene which is grafted by maleic anhydride, dispersing agent. The present invention has an excellent surface hardness and scratch resistance.
    Type: Application
    Filed: October 27, 2003
    Publication date: April 29, 2004
    Inventors: Sok-Won Kim, Young-Won Kim, Kyung-Suk Chae
  • Publication number: 20040072936
    Abstract: The polyolefin resin composition of the present invention includes 100 parts by weight polypropylene, 5 to 45 parts by weight inorganic filler, and 2 to 20 parts by weight silicon-grafted polyethylene. The polyolefin resin composition of the present invention is useful as a material of construction for various kinds of housings for electronic appliances and automobile parts since the resin exhibits better scratch resistance, resin fluidity, and moldability than prior art polyolefin resin compositions while maintaining mechanical properties.
    Type: Application
    Filed: October 27, 2003
    Publication date: April 15, 2004
    Inventors: Sok-Won Kim, Young-Won Kim
  • Patent number: 6163450
    Abstract: A portable computer is provided that has a monitor pivotally mounted onto a main body. The base of the main body have holes that can receive a fastener. On the sides of the main body are receptacles that are positioned near a corresponding hole in the base of the main body of the computer.An L-shaped member forms a connector that allows a strap to be attached to the portable computer to allow the computer to be more easily transported. The L shaped member has a bore on one leg and a boss on the other leg. To attach the connector the boss is inserted into a receptacle in the side of the main body and the bore of the connector is aligned over a hole in the base of the main body. Then, a fastener is inserted through the bore and into the hole in the base of the main body.On a portion of the connector is a bail shaped member that forms a chute between the member and the connector. A strap can be attached to the bail shaped member to simplify the transporting of the portable computer.
    Type: Grant
    Filed: March 25, 1998
    Date of Patent: December 19, 2000
    Assignee: SamSung Electronics Co. Ltd.
    Inventor: Young-Won Kim
  • Patent number: 6101086
    Abstract: A portable computer is provided that has hand grips on both sides of the main body of the computer. The hand grips allow the computer to be carried with two hands when the display screen is in an open position and allow the computer to be carried with one hand when the display screen is in a closed position. Additionally, a rubber bumper may be installed around the hand grips and the side of the main body of the computer to increase the ability of the computer to withstand impacts with foreign object. Furthermore, the computer may be designed with any one of an elliptical prism shape, a circular prism shape, and an oblong prism shape to further reduce the stress experienced by the computer when the computer undergoes an impact with a foreign object.For situations when a user wishes to transport the laptop computer without holding the computer in either hand, a shoulder strap may be fastened to the hand grips to allow the computer to be carried over a shoulder.
    Type: Grant
    Filed: March 25, 1998
    Date of Patent: August 8, 2000
    Assignee: SamSung Electronics Co., Ltd.
    Inventors: Jung-Hoon Kim, Young-Won Kim
  • Patent number: 6036287
    Abstract: The present invention relates to a portable computer with endurance against shock by attachment of a shock-absorber to the portable computer. The external shock to the portable computer during transport is absorbed by a shock-absorber which is attached to the portable computer so as to cover an external case, an edge part of a cover case of the external case, and an established area of a main body case.
    Type: Grant
    Filed: October 13, 1998
    Date of Patent: March 14, 2000
    Assignee: SamSung Electronics Co., Ltd.
    Inventor: Young-Won Kim
  • Patent number: 5746846
    Abstract: Gamma titanium aluminide alloys having the composition Ti-(45.5-47.5)Al-(0-3.0)X-(1-5)Y-(0.05-1.0)W, where X is Cr, Mn or any combination thereof, and Y is Nb, Ta or any combination thereof (at %), are treated to provide specific microstructures. To obtain duplex microstructures, the annealing temperature (T.sub.a) range is the eutectoid temperature (T.sub.e)+100.degree. C. to the alpha transus temperature (T.sub..alpha.)-30.degree. C.; to obtain nearly lamellar microstructures, the annealing temperature range is T.sub..alpha. -20.degree. C. to T.sub..alpha. -1.degree. C.; to obtain fully lamellar microstructures, the annealing temperature range is T.sub..alpha. to T.sub..alpha. +50.degree. C. The times required for producing these microstructures range from 0.25 to 15 hours, depending on the desired microstructure, alloy composition, annealing temperature selected, material section size and grain size desired.
    Type: Grant
    Filed: May 28, 1996
    Date of Patent: May 5, 1998
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Young-Won Kim, Dennis M. Dimiduk
  • Patent number: 5558729
    Abstract: Gamma titanium aluminide alloys having the composition Ti--(45.5-47.5)Al--(0-3.0)X--(1-5)Y--(0.05-1.0)W, where X is Cr, Mn or any combination thereof, and Y is Nb, Ta or any combination thereof (at %), are treated to provide specific microstructures. To obtain duplex microstructures, the annealing temperature (T.sub.a) range is the eutectoid temperature (T.sub.e)+100.degree. C. to the alpha transus temperature (T.sub..alpha.)-30.degree. C.; to obtain nearly lamellar microstructures, the annealing temperature range is T.sub..alpha. -20.degree. C. to T.sub..alpha. -1.degree. C.; to obtain fully lamellar microstructures, the annealing temperature range is T.sub..alpha. to T.sub..alpha. +50.degree. C. The times required for producing these microstructures range from 0.25 to 15 hours, depending on the desired microstructure, alloy composition, annealing temperature selected, material section size and grain size desired.
    Type: Grant
    Filed: January 27, 1995
    Date of Patent: September 24, 1996
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Young-Won Kim, Dennis M. Dimiduk
  • Patent number: 5417781
    Abstract: Gamma titanium aluminide alloy articles having improved properties are produced by the following methods:The first of these methods comprises the steps of: (a) heat treating an alloy billet or preform at a temperature in the approximate range of T.sub..alpha. to T.sub..alpha. +100.degree. C. for about 0.5 to 8 hours, (b) shaping the billet at a temperature between T.sub..alpha. -30.degree. C. and T.sub..alpha. to produce a shaped article, and (c) aging the thus-shaped article at a temperature between about 750.degree. and 1050.degree. C. for about 2 to 24 hours.The second method comprises (a) rapidly preheating an alloy preform to a temperature in the approximate range of T.sub..alpha. to T.sub..alpha. +100.degree. C., (b) shaping the billet at a temperature between T.sub..alpha. and T.sub..alpha. +100.degree. C. to produce a shaped article, and (c) aging the thus-shaped article at a temperature between about 750.degree. and 1050.degree. C. for about 2 to 24 hours.
    Type: Grant
    Filed: June 14, 1994
    Date of Patent: May 23, 1995
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Paul A. McQuay, Dennis M. Dimiduk, Young-Won Kim
  • Patent number: 5226985
    Abstract: A first method for producing articles of gamma titanium alumide alloy having improved properties comprises the steps of: (a) shaping the article at a temperature between the titanium-aluminum eutectoid temperature of the alloy and the alpha-transus temperature of the alloy, and (b) aging the thus-shaped article at a temperature between about 750.degree. and 1050.degree. C. for about 4 to 150 hours. Shaping is preferably carried out at a temperature about 0.degree. to 50.degree. C. below the alpha-transus temperature.A second method for producing articles of gamma titanium aluminide alloy having improved properties comprises the steps of: (a) shaping the article at a temperature in the approximate range of about 130.degree. C. below the titanium-aluminum eutectoid temperature of the alloy to about 20.degree. C.
    Type: Grant
    Filed: January 22, 1992
    Date of Patent: July 13, 1993
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Young-Won Kim, Dennis M. Dimiduk
  • Patent number: 5067988
    Abstract: A method for refining the microstructure and enhancing the processability of titanium aluminum alloys containing about 45 to 55 atomic percent aluminum which comprises the steps of:(a) rapidly solidifying a titanium aluminum alloy containing about 45 to 55 atomic percent aluminum to provide a rapidly solidified material having at least one dimension not greater than about 100 micrometers;(b) diffusing hydrogen into the resulting rapidly solidified material at a temperature in the approximate range of 400.degree. to 780.degree. C., and;(c) diffusing hydrogen out of the hydrogenated solid material.
    Type: Grant
    Filed: February 2, 1990
    Date of Patent: November 26, 1991
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Francis H. Froes, D. Simon Shong, Young-Won Kim, Frederick C. Yolton
  • Patent number: 4851193
    Abstract: An improved alloy consisting essentially of about 6 to 10 weight percent Fe, about 2 to 10 weight percent Gd, balance Al. The alloy may also contain minor amounts of one or more refractory metals.
    Type: Grant
    Filed: February 13, 1989
    Date of Patent: July 25, 1989
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Yashwant R. Mahajan, Young-Won Kim, Francis H. Froes
  • Patent number: H1988
    Abstract: Methods are presented to produce duplex (DP) microstructures, nearly lamellar (NL) microstructures, and fully TMT lamellar (TMTL) microstructures in gamma titanium aluminide alloy articles. The key step for obtaining a specific type of microstructure is the post-hot work annealing treatment at a temperature in a specific range for the desired microstructure. The annealing temperatures range from Te+100° C. to T&agr;−25° C. for duplex (DP) microstructures, from T&agr;−25° C. to T&agr;−5° C. for nearly lamellar (NL) microstructures, and from T&agr; to T&agr;+60° C. for fully TMT lamellar (TMTL) microstructures, where Te is the titanium-aluminum eutectoid temperature of the alloy and T&agr; is the alpha transus temperature of the alloy. The times required for producing specific microstructures range from 2 min to 15 hours depending on microstructural type, alloy composition, annealing temperature selected, material section size, and desired grain-size.
    Type: Grant
    Filed: June 30, 1998
    Date of Patent: September 4, 2001
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Young-Won Kim, Dennis M. Dimiduk