Abstract: A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.

Abstract: A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.

Abstract: A method for fabricating a solar cell, includes forming an emitter layer by doping a first impurity having a second conductivity type, opposite a first conductivity type, on a front surface of a substrate having the first conductivity type; forming a back surface field by doping a second impurity having the first conductivity type on a rear surface of the substrate; and forming a plurality of front finger lines in contact with the emitter layer and a plurality of rear finger lines in contact with the back surface field, wherein the emitter layer has a selective emitter structure, the back surface field has a selective back surface field structure, and the number of the plurality of rear finger lines positioned on the rear surface of the substrate is different from the number of the plurality of front finger lines positioned on a front surface of the substrate.

Abstract: A bifacial solar cell includes a substrate formed of a silicon wafer having an n-type conductivity; an emitter region positioned on a front surface of the substrate and having a p-type conductivity; a front negative fixed charge layer on the emitter region, and a front positive fixed charge layer on the front negative fixed charge; a plurality of first front electrodes extending in a first direction and connected to the emitter region through the front negative fixed charge layer and the front positive fixed charge layer; a plurality of second front electrodes extending in a second direction crossing the first direction and electrically and physically connected to the plurality of first front electrodes; a back aluminum oxide layer and a back silicon nitride layer on a back surface of the substrate; a plurality of back surface field regions extending in the first direction and locally positioned on the back surface of the substrate; a plurality of first back electrodes extending in the first direction and dir

Abstract: A solar cell is disclosed.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate, an emitter layer at a front surface of the substrate, a first anti-reflection layer on the emitter layer, a back surface field layer at a back surface of the substrate, and a second anti-reflection layer on the back surface field layer. The first anti-reflection layer and the second anti-reflection layer overlap may each other.

Abstract: Discussed is a solar cell including a semiconductor substrate including a base area and a doping area, a doping layer formed on the semiconductor substrate, the doping layer having a conductive type different from the doping area, a tunneling layer interposed between the doping layer and the semiconductor substrate, a first electrode connected to the doping area, and a second electrode connected to the doping layer.

Abstract: A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.

Abstract: A bifacial solar cell includes a substrate of an n-type; an emitter layer positioned on a first surface of the substrate; a plurality of first electrodes locally positioned on the emitter layer and electrically connected to the emitter layer; a first passivation layer positioned on the emitter layer; a silicon oxide layer formed at an interface between the first passivation layer and the emitter layer, the silicon oxide layer having a thickness of about 1 nm to 3 nm; a first anti-reflection layer positioned on the first passivation layer; a plurality of back surface field layers locally positioned on a second surface of the substrate; a plurality of second electrodes respectively positioned on the plurality of back surface field layers and electrically connected to the plurality of back surface field layers; and a second passivation layer positioned on the second surface of the substrate.

Abstract: A solar cell module can include an octagonal-shaped semiconductor substrate having a chamfer formed at each edge among at least two opposite edges of the octagonal-shaped semiconductor; and a first electrode unit formed on one surface of the octagonal-shaped semiconductor substrate, the first electrode unit including: a plurality of first sub-electrodes including first finger electrodes and a first bus bar electrode connected to ends of the first finger electrodes, and a plurality of second sub-electrodes including second finger electrodes and a second bus bar electrode connected to ends of the second finger electrodes, in which the plurality of first sub-electrodes are spaced apart from the plurality of second sub-electrodes in a first direction, and a first sub-electrode disposed adjacent to a chamfer at a first edge among the at least two opposite edges in the first direction among the plurality of first sub-electrodes, and a second sub-electrode disposed adjacent to another chamfer at a second edge among

Abstract: A method for manufacturing a solar cell includes forming an emitter layer on a first surface of a substrate, forming a back surface field layer on a second surface opposite the first surface of the substrate, forming a first anti-reflection layer on the emitter layer, forming a second anti-reflection layer on the back surface field layer, and forming a plurality of first electrodes each including a first metal seed layer and a first conductive layer on a plurality of first contact regions of the first anti-reflection film and a plurality of second electrodes each including a second metal seed layer and a second conductive layer on a plurality of second contact regions of the second anti-reflection film, the plurality of first contact regions being partially formed at the first anti-reflection layer and each having a first width.

Abstract: A bifacial solar cell includes a substrate formed of a silicon wafer having an n-type conductivity; an emitter region positioned on a front surface of the substrate and having a p-type conductivity; a front negative fixed charge layer on the emitter region, and a front positive fixed charge layer on the front negative fixed charge; a plurality of first front electrodes extending in a first direction and connected to the emitter region through the front negative fixed charge layer and the front positive fixed charge layer; a plurality of second front electrodes extending in a second direction crossing the first direction and electrically and physically connected to the plurality of first front electrodes; a back aluminum oxide layer and a back silicon nitride layer on a back surface of the substrate; a plurality of back surface field regions extending in the first direction and locally positioned on the back surface of the substrate; a plurality of first back electrodes extending in the first direction and dir

Abstract: A method of manufacturing a solar cell according to an embodiment includes the steps of: forming an emitter layer by ion-implanting a first conductive type dopant to a first surface of a semiconductor substrate; and forming a back surface field layer by ion-implanting a second conductive type dopant to a second surface of the semiconductor substrate. When an additional dopant is a dopant other than the first and second conductive type dopants, an amount of the additional dopant doped during the forming the back surface field layer is larger than an amount of the additional dopant doped during the forming the emitter layer.

Abstract: A solar cell is provided comprising a substrate, a first insulating layer on a first surface of the substrate, the first insulating layer having a plurality of first openings that expose portions of the substrate, and a plurality of first electrodes electrically connected to the substrate through the first openings, wherein one or more of the first electrodes are configured so that a width of an upper portion located on the first insulating layer is wider than a width of a lower portion located in a corresponding first opening.

Abstract: A method for fabricating a solar cell, includes forming an emitter layer by doping a first impurity having a second conductivity type, opposite a first conductivity type, on a front surface of a substrate having the first conductivity type; forming a back surface field by doping a second impurity having the first conductivity type on a rear surface of the substrate; and forming a plurality of front finger lines in contact with the emitter layer and a plurality of rear finger lines in contact with the back surface field, wherein the emitter layer has a selective emitter structure, the back surface field has a selective back surface field structure, and the number of the plurality of rear finger lines positioned on the rear surface of the substrate is different from the number of the plurality of front finger lines positioned on a front surface of the substrate.

Abstract: A solar cell includes a semiconductor substrate of a first conductive type and includes a first side and a second side, the second side having a textured structure formed on the entire second side; a first doped region of the first conductive type and a second doped region of a second conductive type on the first side; a first passivation layer on the first doped region and the second doped region and exposing a portion of a back surface of each of the first and second doped regions, the first passivation layer being formed of silicon nitride (SiNx), silicon dioxide (SiOx), or a combination thereof; a second passivation layer on the second side; an anti-reflection layer on the second passivation layer; and a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region.

Abstract: Discussed is a solar cell including a substrate having a first conductivity type; an emitter layer including a plurality of finger lines connected with an emitter layer; a plurality of rear finger lines connected with a back surface field, wherein the emitter layer includes first areas in contact with the plurality of front finger lines and second areas positioned between the plurality of front finger lines and having a lower doping concentration than that of the first areas, the back surface field includes areas in contact with the plurality of rear finger lines, and the number of the plurality of rear finger lines positioned on a rear surface of the substrate and the number of the plurality of front finger lines positioned on a front surface of the substrate are different.

Abstract: A bifacial solar cell includes a substrate; a first conductive type region having a conductive type different from a conductive type of the substrate; a first insulating layer formed on the first conductive type region; a plurality of first electrodes contacting the first conductive type region through the first insulating layer and extended in a first direction; a plurality of first current collectors extended in a second direction crossing the first direction, wherein the plurality of first current collectors are electrically and physically connected to the plurality of first electrodes; a second conductive type region having a conductive type the same as the conductive type of the substrate, and having an impurity concentration that is higher than an impurity concentration of the substrate; a second insulating layer formed on the second conductive type region; a plurality of second electrodes contacting the second conductive type region through the second insulating layer and extended in the first directio

Abstract: A solar cell including a semiconductor layer containing first type impurities and having front and back surfaces, a first portion on the back surface of the semiconductor layer, the first portion being doped with second type impurities, a second portion on the back surface of the semiconductor layer, the second portion being more heavily doped with the first type impurities than the semiconductor layer, a third portion on the back surface of the semiconductor layer, the third portion being doped with the first type impurities more heavily than the semiconductor layer and less heavily than the second portion, a passivation layer on the back surface of the semiconductor layer and contacting the first portion, the second portion and the third portion, and having contact holes corresponding to the first portion and the second portion and an anti-reflection layer formed on the front surface of the semiconductor layer.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.