Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a semiconductor substrate, a first doped region of a first conductive type, a second doped region of a second conductive type opposite the first conductive type, a back passivation layer having contact holes exposing a portion of each of the first and second doped regions, a first electrode formed on the first doped region exposed through the contact holes, a second electrode formed on the second doped region exposed through the contact holes, an alignment mark formed at one surface of the semiconductor substrate, and a textured surface that is formed at a light receiving surface of the semiconductor substrate opposite the one surface of the semiconductor substrate in which the first and second doped regions are formed.

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract: A solar cell module and a method for manufacturing the same are discussed. The solar cell module includes a plurality of solar cells, a front substrate a front substrate positioned at first surfaces of the plurality of solar cells, a back substrate positioned at second surfaces of the plurality of solar cells, a front protective member positioned between the front substrate and the plurality of solar cells, the front protective member including a first silicone resin, a back protective member positioned between the back substrate and the plurality of solar cells, the back protective member including a second silicone resin, and a fiber material disposed between the front substrate and the back substrate.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract: The present invention relates to a solar cell. The solar cell includes a substrate of a first conductive type, the substrate having a textured surface on which a plurality of projected portions are formed, and surfaces of the projected portions having at least one of a plurality of particles attached thereto and a plurality of depressions formed thereon; an emitter layer of a second conductive type opposite the first conductive type, the emitter layer being positioned in the substrate so that the emitter layer has the textured surface; an anti-reflection layer positioned on the emitter layer which has the textured surface and including at least one layer; a plurality of first electrodes electrically connected to the emitter layer; and at least one second electrode electrically connected to the substrate.

Abstract: A solar cell and a method for manufacturing the same are discussed.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract: The present invention relates to a solar cell. The solar cell includes a substrate of a first conductive type, the substrate having a textured surface on which a plurality of projected portions are formed, and surfaces of the projected portions having at least one of a plurality of particles attached thereto and a plurality of depressions formed thereon; an emitter layer of a second conductive type opposite the first conductive type, the emitter layer being positioned in the substrate so that the emitter layer has the textured surface; an anti-reflection layer positioned on the emitter layer which has the textured surface and including at least one layer; a plurality of first electrodes electrically connected to the emitter layer; and at least one second electrode electrically connected to the substrate.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor layer containing first impurities, a first portion positioned on a first part of one surface of the semiconductor layer, the first portion being more heavily doped with second impurities different from the first impurities than the semiconductor layer, a second portion positioned on a second part of the one surface of the semiconductor layer, the second portion being more heavily doped with the first impurities than the semiconductor layer, and a third portion positioned between the first portion and the second portion, the third portion having an impurity concentration lower than an impurity concentration of the first portion and an impurity concentration of the second portion.

Abstract: Discussed is a solar cell including a semiconductor substrate including a base area and a doping area, a doping layer formed on the semiconductor substrate, the doping layer having a conductive type different from the doping area, a tunneling layer interposed between the doping layer and the semiconductor substrate, a first electrode connected to the doping area, and a second electrode connected to the doping layer.

Abstract: A solar cell is disclosed.

Abstract: A solar cell and a method of manufacturing a solar cell are disclosed. The solar cell includes forming a first doped region of a first conductive type and a second doped region of a second conductive type opposite the first conductive type on a semiconductor substrate of the first conductive type; forming a passivation layer on the semiconductor substrate to expose a portion of each of the first and second doped regions; and forming a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region, wherein the forming of the first and second electrodes includes forming a metal seed layer directly contacting the first doped region and a metal seed layer directly contacting the second doped region, and forming a conductive layer on the metal seed layer of each of the first and second electrodes.

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a first doped region of a first conductive type formed on a semiconductor substrate of the first conductive type, a second doped region of a second conductive type opposite the first conductive type formed on the semiconductor substrate at a location adjacent to the first doped region, a passivation layer exposing a portion of each of the first and second doped regions, a first electrode formed on the exposed portion of the first doped region, and a second electrode formed on the exposed portion of the second doped region. The first electrode includes a metal seed layer directly contacting the first doped region, and the second electrode includes a metal seed layer directly contacting the second doped region.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract: A solar cell and a method of manufacturing the same are disclosed. The method includes simultaneously forming a first doping region of a first conductive type and a second doping region of a second conductive type opposite the first conductive type into a substrate of the first conductive type, forming a back passivation layer on the first doping region and the second doping region, removing portions of the back passivation layer to expose a portion of the first doping region and a portion of the second doping region, and forming a first electrode and a second electrode that are connected to the exposed portion of the first doping region and the exposed portion of the second doping region, respectively.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate, an emitter region positioned at one surface of the substrate, a first insulating layer including a lower layer positioned on the emitter region and an upper layer positioned on the lower layer, and a first electrode which is formed of a first conductive paste and is electrically connected to the emitter region. The first insulating layer includes a plurality of first contact holes, and a portion of the first electrode is filled in the plurality of first contact holes.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.