Abstract: Disclosed photoresist topcoat compositions including a polymer including at least one of the first structural units represented by Chemical Formula 1 or Chemical Formula 2, a thermal acid generator (TAG), and a solvent; and a method of forming patterns using the photoresist topcoat composition.

Abstract: The present invention relates to a fusion protein comprising a SARS-CoV-2-derived receptor-binding domain and a nucleocapsid protein, and the use thereof. The fusion protein comprising a coronavirus-derived receptor-binding domain and a nucleocapsid protein is highly applicable to a multivalent vaccine composition having greatly improved in-vivo half-life and remarkably superior efficacy compared to an immunogenic composition comprising only a receptor-binding domain. In particular, the fusion protein can greatly improve the titer of the coronavirus-specific antibody formation and T-cell immune response, and is thus useful for the prevention and treatment of coronaviruses comprising SARS-CoV-2.

Abstract: Disclosed are a novel coronavirus-derived receptor-binding domain variant having reduced ACE2-binding affinity, a fusion protein comprising the same, and the use thereof. It is possible to overcome the drawbacks of conventional vaccines using the coronavirus spike protein or receptor-binding domain thereof, wherein the reduced ACE2 expression due to binding to ACE2 and negative feedback may lead to side effects of the lungs or heart, and in particular, may be fatal to patients suffering from underlying diseases of the lungs or heart. In particular, the fusion protein constructed by fusing the coronavirus receptor-binding domain with the Fc domain is imparted with a greatly improved in-vivo half-life, and has superior efficacy by further combining N protein, M protein, ORF protein, or the like of SARS-CoV-2 therewith through additional modification and thus is highly applicable to a multivalent immunogenic composition.

Abstract: A method for recycling a positive electrode material. the method includes obtaining positive electrode material particles from a positive electrode. The method further includes mixing the positive electrode material particles with a solution or powder containing sodium ions and heat-treating the mixture including the positive electrode material particles and the solution or power containing sodium ions. The method further includes rinsing the heat-treated positive electrode material particles with water.

Abstract: A method for forming photoresist patterns and a semiconductor device on which a photoresist pattern manufactured according to the method is formed are disclosed. The method includes forming a preliminary photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer, the acrylic polymer including a structural unit containing a hydroxy group and a fluorine, and an acid compound on the preliminary photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an acetate-based compound on the substrate coated with the topcoat to remove the topcoat.

Abstract: A resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; a mixture including a sulfonic acid compound containing at least one fluorine and a carboxylic acid compound containing at least one fluorine in a weight ratio of about 1:0.1 to about 1:50; and a solvent. A method of forming patterns uses the resist topcoat composition to form a topcoat over a patterned substrate.

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; at least one acid compound selected from a sulfonic acid compound containing at least one fluorine, a sulfonimide compound containing at least one fluorine, and a carboxylic acid compound containing at least one fluorine; and a solvent.

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition.

Abstract: A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are disclosed. The resist topcoat composition includes an acrylic polymer comprising a structural unit comprising a hydroxy group and a fluorine; a mixture comprising a first acid compound comprising at least one fluorine; and a second acid compound different from the first acid compound and comprising at least one fluorine, the first acid compound and the second acid compound are each independently selected from a sulfonic acid compound and a sulfonimide compound, the first acid compound and the second acid compound being in a weight ratio of about 1:0.1 to about 1:50; and a solvent.

Abstract: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

Abstract: The present invention relates to a composition for proliferating a T cells, containing a fusion protein dimer comprising IL-2 protein or a variant thereof and CD80 protein or a fragment thereof, and to a method for culturing T cells using same. The T cells cultured according to the present invention increase the proliferation and activity of T cells even without using CD3/CD28 antibody-bound magnetic beads and proliferate T cells by culturing a patient's own peripheral blood mononuclear cells and are not likely to cause side effects in the human body, and thus will be widely used as a novel T cell therapeutic agent. Furthermore, in the case of CD8+ T cells cultured as described above, the activity thereof increases, and thus, the CD8+ T cells can be used as a more effective therapeutic agent.

Abstract: Provided is an anticancer agent, comprising, as active ingredients, NK cells and a fusion protein which comprises an IL-2 protein and CD80 protein. In one specific embodiment, a fusion protein comprising a CD80 fragment, an immunoglobulin Fc and an IL-2 variant can activate immunocytes such as natural killer cells. In addition, since cancer can be effectively inhibited when co-administering with natural killer cells, the pharmaceutical composition increases the immune activity in the body so as to be effectively usable for cancer, there by having high industrial applicability.

Abstract: A method of forming a micropattern, a substrate surface inspection apparatus, a cantilever set for an atomic force microscope, and a method of analyzing a surface of a semiconductor substrate, and a probe tip the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM).

Abstract: A display substrate and its fabricating method have been disclosed. In a horizontal-field-mode liquid crystal display device, while maintaining five mask processes, additional direct contact has been formed to implement a narrow bezel.

Abstract: A method of forming a micropattern, a substrate surface inspection apparatus, a cantilever set for an atomic force microscope, and a method of analyzing a surface of a semiconductor substrate, and a probe tip the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM).

Abstract: A display substrate including a lower common electrode disposed on a substrate, an insulating layer disposed on the lower common electrode, a gate pattern including a gate electrode disposed on the insulating layer and a common electrode contact part and a direct contact part spaced apart from the gate electrode, a gate insulating layer disposed on the gate pattern, a semiconductor layer disposed on the gate insulating layer, an etch stopping layer disposed on the gate insulating layer, source and drain electrodes disposed on the etch stopping layer, pixel part extending from the source and drain electrodes, a first conductive layer connected to the common electrode contact part, a second conductive layer connected to the direct contact part, and a passivation layer disposed on the source and drain electrodes, the first conductive layer, and the second conductive layer.

Abstract: Disclosed are a display substrate, of which productivity is improved by decreasing five mask (M) processes utilized for fabricating the display substrate used in a liquid crystal display device in a horizontal field (Plane to Line Switching (PLS)) mode to four mask processes, and a method of fabricating the same.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.