Abstract: Proposed is a solar photovoltaic module that is easily recyclable. In the solar photovoltaic module disclosed herein, each component is coupled to each other in a physical manner. Therefore, since the solar photovoltaic module may be physically separated, recycling of the solar photovoltaic module may be very easily performed.

Abstract: Proposed is a solar photovoltaic module that is easily recyclable. In the solar photovoltaic module disclosed herein, each component is coupled to each other in a physical manner. Therefore, since the solar photovoltaic module may be physically separated, recycling of the solar photovoltaic module may be very easily performed.

Abstract: The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.

Abstract: A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s100); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s200); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s300); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer 200 (s400); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s500).

Abstract: The invention relates to a semitransparent back electrode, a solar cell using the same, and a method for manufacturing them and, more specifically, to a technique for solving a performance decrease problem caused by increase of resistance of a conventional semitransparent solar cell. A method for manufacturing a semitransparent back electrode of a solar cell according to the invention includes depositing a transparent back electrode on a substrate, and forming a semitransparent molybdenum electrode layer on the back electrode. Accordingly, a BSF effect can be expected by applying a molybdenum layer locally or restrictively as a thin film, and the transparency is secured.

Abstract: A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu2ZnSnS4 thin film layer; forming a Cu2ZnSn(S,Se)4 thin film layer; and forming a Cu2ZnSnS4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

Abstract: Disclosed herein is a device for controlling a sample temperature during photoelectric measurement of the sample. The device for controlling a sample temperature during photoelectric measurement of the sample includes: a sample stage to which a measurement target sample is fixed; a cooling unit for cooling the sample by injecting air; and a temperature measuring unit having a thermometer that measures a temperature of the sample. The device has an effect of easily controlling the temperature of a measurement target sample by employing a direct control method for a sample temperature, in which air or cooled air is injected to the sample.

Abstract: A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag2Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.

Abstract: A method for manufacturing a light absorption layer of a thin film solar cell includes: manufacturing a Ib group element-VIa group element binary system nano particle; manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solution precursor including a solvent, binder and Va group element to the Ib group element-VIa group element binary system nano particle; distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element; coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer; and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element.

Abstract: Disclosed herein is a device for controlling a sample temperature during photoelectric measurement of the sample. The device for controlling a sample temperature during photoelectric measurement of the sample includes: a sample stage to which a measurement target sample is fixed; a cooling unit for cooling the sample by injecting air; and a temperature measuring unit having a thermometer that measures a temperature of the sample. The device has an effect of easily controlling the temperature of a measurement target sample by employing a direct control method for a sample temperature, in which air or cooled air is injected to the sample.

Abstract: Disclosed are a method of manufacturing a CI(G)S-based thin film including aging of a slurry composed of binary nanoparticles, and a CI(G)S-based thin film manufactured thereby. The method of manufacturing the CI(G)S-based thin film includes: preparing CI(G)S-based binary nanoparticles; mixing the binary nanoparticles, a solution precursor including a CI(G)S-based element, a solvent and a chelating agent, thus preparing a hybrid slurry; aging the hybrid slurry for 5 to 10 days; subjecting the aged hybrid slurry to coating, thus forming a CI(G)S-based thin film; and subjecting the CI(G)S-based thin film to heat treatment. Thereby, high reproducibility can be ensured upon manufacturing a CI(G)S-based thin film for solar cells, and thus reliability of the produced thin film can be increased.

Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

Abstract: A distributed generation system and method of using a rental article having a flexible thin film solar cell are disclosed. The distributed generation system of a rental article using a flexible thin film solar cell can include: a rental article which generates electric energy from collected solar energy; and a station which is positioned in a space for renting and returning the rental article, and distributes and transmits electric energy provided from the rental article to a power demand target.

Abstract: A solar cell module, a method for manufacturing the solar cell module, a solar power system, and an interconnection ribbon are provided. The solar cell module includes a plurality of solar cells which are connected in series or in parallel through interconnection ribbons, wherein the interconnection ribbons have a zigzag shape to reduce tension generated according to bending of the solar cell module.

Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

Abstract: Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.

Abstract: The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.

Abstract: A solar cell is provided that increases a rate of sunlight absorbed into a photoelectric conversion layer by forming a transparent conductive layer into a plurality of layers having different oxygen contents and different light absorption coefficients, and a manufacturing method thereof. The solar cell includes a substrate, a transparent conductive layer, and a photoelectric conversion layer. The transparent conductive layer includes a first layer having a first light absorption coefficient, and a second layer formed on the first layer and having a second light absorption coefficient higher than the first light absorption coefficient.

Abstract: Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.

Abstract: A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag2Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.