Abstract: Example embodiments relate to a method and an apparatus of ashing an object. The method may include converting a first reaction fluid into plasma, reacting the plasma with a second reaction fluid to generate radicals, and ashing the object using the radicals and the plasma.

Abstract: A system for photolithography may include an exposure chamber providing a first isolated environment, an exposure stage in the exposure chamber, a radiation source, an interface chamber providing a second isolated environment, a port, a post exposure bake heater in the interface chamber, and a wafer handler. The exposure stage may be configured to receive a wafer having photoresist thereon to be exposed, and the radiation source may be configured to provide exposing radiation to the wafer being exposed. The port may be configured to allow wafer transport between the first and second isolated environments of the exposure and interface chambers, and the post exposure bake heater may be configured to bake the wafer after exposure.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: A plurality of different types of plasma sources are used to treat a substrate. The plasma sources may be associated with a single process chamber. In this case, the plasma sources are selectively operated for treating the substrate in the process chamber. Alternatively, the plasma sources may be respectively associated with respective process chambers in an integrated manufacturing facility. According to the present invention, the operating parameters, e.g., sequence of use, of the plasma sources constitute additional process parameters that can be adjusted maximizing the efficiency of the process.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: High-density plasma CVD processes with improved gap filling characteristics are provided. In one exemplary process, the process includes loading a semiconductor substrate into a process chamber. First main process gases, including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas and a hydrogen gas, are then injected into the process chamber. Thus, a high-density plasma is generated over the semiconductor substrate, and the semiconductor substrate is heated to a temperature in the range of about 550° C. to about 700° C. by the high-density plasma. Thus, a silicon oxide layer is formed to completely fill a gap region without any voids or defects in the semiconductor substrate. In addition, the first main process gases can be replaced with second main process gases including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas, a hydrogen gas and a helium gas.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: A method of forming titanium nitride layers by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein the titanium nitride layers are formed on one or more substrates in accordance with a reaction between a first source gas including TiCl4 gas and a second source gas including an NH3 gas. After forming the titanium nitride layers, chlorine remaining in the titanium nitride layers is removed using a treatment gas which includes an NH3 gas. The substrates are revolved by a predetermined rotation angle between repeated titanium nitride layer formation cycles. The process of forming the titanium nitride layers and rotating the substrates is alternately repeated resulting in titanium nitride layers having substantially uniform thicknesses and low specific resistance.

Abstract: An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

Abstract: A system for photolithography may include an exposure chamber providing a first isolated environment, an exposure stage in the exposure chamber, a radiation source, an interface chamber providing a second isolated environment, a port, a post exposure bake heater in the interface chamber, and a wafer handler. The exposure stage may be configured to receive a wafer having photoresist thereon to be exposed, and the radiation source may be configured to provide exposing radiation to the wafer being exposed. The port may be configured to allow wafer transport between the first and second isolated environments of the exposure and interface chambers, and the post exposure bake heater may be configured to bake the wafer after exposure.

Abstract: High-density plasma CVD processes with improved gap filling characteristics are provided. In one exemplary process, the process includes loading a semiconductor substrate into a process chamber. First main process gases, including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas and a hydrogen gas, are then injected into the process chamber. Thus, a high-density plasma is generated over the semiconductor substrate, and the semiconductor substrate is heated to a temperature in the range of about 550° C. to about 700° C. by the high-density plasma. Thus, a silicon oxide layer is formed to completely fill a gap region without any voids or defects in the semiconductor substrate. In addition, the first main process gases can be replaced with second main process gases including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas, a hydrogen gas and a helium gas.

Abstract: An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

Abstract: A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annulus of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.

Abstract: A semiconductor device provides improved performance at high integration levels by utilizing a gate insulation layer formed from silicon-oxynitride which prevents impurities in the doped gate electrode from diffusing into the semiconductor substrate during the fabrication processes. A method for forming the silicon-oxynitride layer utilizes a vertical diffusion furnace to increase productivity and achieve a uniform nitrogen density in the silicon-oxynitride layer. The method includes forming an initial oxide layer on a semiconductor substrate, changing the initial oxide layer into a pure oxide layer, and then changing the pure oxide layer into a silicon-oxynitride layer. The initial oxide layer is formed by loading a semiconductor substrate into a diffusion furnace at a temperature between 550˜750° C., raising the temperature of the substrate to between 700˜950° C., and injecting a mixture of oxygen and nitrogen has into the diffusion furnace.

Abstract: An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annule of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.

Abstract: A wafer transfer apparatus loads and unloads wafers into and from a wafer cassette. The apparatus includes an arm for picking up a wafer, a motor-driven mechanism connected to the arm for moving the arm vertically and horizontally, and a sensor for sensing when the lower surface of the arm contacts an upper surface of a wafer already seated in the wafer cassette. The sensor is made up of a sensor body, a controller, and an amplifier. The arm can be made of metal, in which case the sensor body includes an elastic layer coated on the lower surface of the arm, and an electrically conductive metal layer formed on the elastic layer. When the lower surface of the arm presses against a wafer, the metal layer contacts the metal arm and electrical signals indicative of such contact can thus be produced. Alternatively, the arm may be made of a ceramic.

Abstract: A method for forming a hemispherical grain polysilicon layer on an amorphous silicon film increases the surface area of the layer by first forming silicon crystal nuclei on the film, and then enlarging the nuclei before annealing. The nuclei are formed on the amorphous silicon film loading a substrate having the amorphous silicon film into a chamber and injecting a silicon source gas into the chamber at a first, low flow rate which allows the pressure of the chamber to be reduced, thereby increasing the density of the crystal nuclei. A silicon source gas is then injected into the chamber at a second, higher flow rate, thereby enlarging the silicon crystal nuclei on the amorphous layer. The resulting structure is then annealed to form a hemispherical grain polysilicon layer having a large surface area due to the irregular surface of the polysilicon layer.

Abstract: An air intake apparatus for semiconductor fabricating equipment reduces the inflow of chemical contaminants, such as ozone (O.sub.3), into the equipment. The air intake apparatus includes a fan as an air intake device, and a chemical filter containing activated carbon to remove the chemical contaminants from air drawn in from outside the equipment. The air intake apparatus may further include first and second filters for removing particulate contaminants from the air. By applying the air intake apparatus to chemical vapor deposition (CVD) equipment used to carry out a process for forming hemispherical grains (HSGs), which is sensitive to a native oxide layer, the ozone density inside the CVD equipment is decreased. Accordingly, the semiconductor device produced has a higher capacitance and enhanced performance.