Abstract: A semiconductor package includes a package substrate with a first vent hole, a first semiconductor chip mounted the package substrate, an interposer including supporters on a bottom surface of the interposer and a second vent hole, wherein the supporters contact a top surface of the first semiconductor chip, and the interposer is electrically connected to the package substrate through connection terminals. The semiconductor package further include a second semiconductor chip mounted on the interposer, and a molding layer disposed on the package substrate to cover the first semiconductor chip, the interposer, and the second semiconductor chip.

Abstract: A semiconductor package includes: a substrate; first semiconductor chips mounted on the substrate; a second semiconductor chip mounted on the substrate; a first molding member covering sides of the first semiconductor chips; and a second molding member covering the first semiconductor chips and the second semiconductor chip. Each of the first semiconductor chip includes a plurality of semiconductor chips that are stacked on each other along a first direction. The first molding member includes recesses extending along the first direction. The recesses include first portions, which extend to edges of the first molding member and have a first width, and second portions, which are connected to the first portions and are positioned more inward into the first molding member than the first portions. The second portions have a second width that is greater than the first width, and the second molding member fills at least parts of the recesses.

Abstract: An embodiment provides a semiconductor package including: a redistribution structure; an interconnection structure on the redistribution structure; a memory stacking structure disposed on the redistribution structure and including a buffer die and core dies stacked on the buffer die; a semiconductor die disposed on the buffer die and on the interconnection structure; and an optical engine disposed on the interconnection structure.

Abstract: A semiconductor package includes an interposer structure extending in a first direction and including an inner area and an outer area defined by an inner area, a first semiconductor chip mounted on the inner area and electrically connected to the interposer structure, a plurality of bumps disposed between the first semiconductor chip and the interposer structure, and contacting each of the first semiconductor chip and the interposer structure, an underfill filling a space between the interposer structure and the first semiconductor chip and covering the plurality of bumps; and a mold layer disposed on the outer area and surrounding the first semiconductor chip, wherein the interposer structure includes a decoupling capacitor, wherein a ratio of a length in the first direction of the first semiconductor chip to a length in the first direction of the interposer structure is in a range of 0.9 inclusive to 1 exclusive.

Abstract: A semiconductor package includes a first semiconductor chip on a substrate, a buried solder ball on the substrate and spaced apart from the first semiconductor chip, a first molding layer on the substrate and encapsulating and exposing the first semiconductor chip and the buried solder ball, a second semiconductor chip on the first molding layer and vertically overlapping the buried solder ball and a portion of the first semiconductor chip, and a second molding layer on the first molding layer and covering the second semiconductor chip. The second semiconductor chip is supported on the first semiconductor chip through a dummy solder ball between the first and second semiconductor chips. The second semiconductor chip is connected to the buried solder ball through a signal solder ball between the buried solder ball and the second semiconductor chip.

Abstract: A semiconductor package includes first and second chips horizontally spaced apart from each other on a substrate. An under-fill layer is interposed between the substrate and the first and second chips. An upper mold layer is disposed on the substrate to cover side surfaces of the first and second chips. The second chip includes vertically-stacked sub-chips and a chip mold layer covering side surfaces of the sub-chips. The under-fill layer extends into a space between lower side surfaces of the chip mold layer and the first chip. The upper mold layer extends into a space between upper side surfaces of the chip mold layer and the first chip to cover an uppermost surface of the under-fill layer. The upper side surface of the chip mold layer is recessed inward from the lower side surface of the chip mold layer.

Abstract: Provided is a semiconductor package including a first semiconductor chip provided on a package substrate, an interconnection substrate provided on the package substrate, the interconnection substrate having a side surface facing the first semiconductor chip, and a second semiconductor chip provided on the interconnection substrate and extended to a region on a top surface of the first semiconductor chip, wherein the interconnection substrate includes a lower interconnection layer facing the package substrate, an upper interconnection layer facing the first semiconductor chip, and a passive device between the lower interconnection layer and the upper interconnection layer, and wherein the passive device is electrically connected to the second semiconductor chip.

Abstract: A semiconductor package includes: a first substrate including lower bonding pads; at least one semiconductor chip disposed on the first substrate; bumps disposed on a first surface of the first substrate; and a mold layer disposed on the first substrate and covering the at least one semiconductor chip, wherein the bumps include: a pillar portion bonded to the first surface of the first substrate; a solder portion bonded to a first surface of the pillar portion; and a metal layer including a material including high-melting-point metal atoms, wherein the metal layer covers a first surface of the solder portion, wherein the solder portion includes the high-melting-point metal atoms.

Abstract: A semiconductor die includes: a first surface; a second surface opposite to the first surface; and a first side surface, a second side surface, a third side surface, and a fourth side surface between the first surface and the second surface, in which the first side surface faces the third side surface, and a roughness of the second side surface varies according to area, and a roughness of at least a portion of the second side surface is greater than that of the first side surface.

Abstract: A semiconductor package includes a first semiconductor chip on a substrate, a buried solder ball on the substrate and spaced apart from the first semiconductor chip, a first molding layer on the substrate and encapsulating and exposing the first semiconductor chip and the buried solder ball, a second semiconductor chip on the first molding layer and vertically overlapping the buried solder ball and a portion of the first semiconductor chip, and a second molding layer on the first molding layer and covering the second semiconductor chip. The second semiconductor chip is supported on the first semiconductor chip through a dummy solder ball between the first and second semiconductor chips. The second semiconductor chip is connected to the buried solder ball through a signal solder ball between the buried solder ball and the second semiconductor chip.

Abstract: A semiconductor package includes a package substrate with a first vent hole, a first semiconductor chip mounted the package substrate, an interposer including supporters on a bottom surface of the interposer and a second vent hole, wherein the supporters contact a top surface of the first semiconductor chip, and the interposer is electrically connected to the package substrate through connection terminals. The semiconductor package further include a second semiconductor chip mounted on the interposer, and a molding layer disposed on the package substrate to cover the first semiconductor chip, the interposer, and the second semiconductor chip.

Abstract: Disclosed is a semiconductor package comprising a lower substrate including a conductive line; a first semiconductor chip on the lower substrate; an under-fill layer between the first semiconductor chip and the lower substrate, the under-fill layer including a central part below the first semiconductor chip and an edge part isolated from direct contact with the central part in a first direction parallel to a top surface of the lower substrate, and a recess region between the central part and the edge part. The recess region may be defined by a sidewall of the central part, a sidewall of the edge part, and a top surface of the conductive line in the lower substrate.

Abstract: A semiconductor package including a first die, through electrodes penetrating the first die, a first pad on a top surface of the first die and coupled to a through electrode, a second die on the first die, a second pad on a bottom surface of the second die, a first connection terminal connecting the first pad to the second pad, and an insulating layer that fills a region between the first die and the second die and encloses the first connection terminal. The first connection terminal includes an intermetallic compound made of solder material and metallic material of the first and second pads. A concentration of the metallic material in the first connection terminal is substantially constant regardless of a distance from the first pad or the second pad.

Abstract: A semiconductor package includes a first semiconductor chip mounted on a substrate, a first conductive post disposed on the substrate and spaced apart from the first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip and the first conductive post, and a mold layer on the substrate that covers the first and second semiconductor chips and the first conductive post. The second semiconductor chip is supported on the first semiconductor chip by a first dummy solder terminal provided between the first and second semiconductor chips, and is coupled to the first conductive post by a first signal solder terminal provided between the first conductive post and the second semiconductor chip. The first dummy solder terminal is in direct contact with a top surface of the first semiconductor chip, and is electrically disconnected from the second semiconductor chip.

Abstract: A semiconductor package may include a circuit board, an interposer structure on the circuit board, a mold layer, and a first semiconductor chip and a second semiconductor chip spaced apart from each other in a first direction on a center region of the interposer structure and electrically connected to the interposer structure. The interposer structure may include a plurality of trenches in an edge region of the interposer structure and extending through the interposer structure. The mold layer may be in the plurality of trenches and may wrap the first and second semiconductor chips. The mold layer may include a penetrating portion in the plurality of trenches and a stack portion on the interposer structure. A bottom surface of the penetrating portion of the mold layer may be on a same plane as a bottom surface of the interposer structure.

Abstract: A semiconductor package includes a package substrate with a first vent hole, a first semiconductor chip mounted the package substrate, an interposer including supporters on a bottom surface of the interposer and a second vent hole, wherein the supporters contact a top surface of the first semiconductor chip, and the interposer is electrically connected to the package substrate through connection terminals. The semiconductor package further include a second semiconductor chip mounted on the interposer, and a molding layer disposed on the package substrate to cover the first semiconductor chip, the interposer, and the second semiconductor chip.

Abstract: A semiconductor package according to at least one embodiment may include: a first chiplet and a second chiplet disposed side by side with each other, wherein each of the first chiplet and the second comprises a substrate including an active side and a back side opposite to the active side; a back side power distribution network (BSPDN) in the back side of the substrate; and a third chiplet electrically coupling the first chiplet and the second chiplet to each other above the first chiplet and the second chiplet; and a fourth chiplet and a fifth chiplet disposed side by side with the third chiplet.

Abstract: A semiconductor package includes a first semiconductor chip mounted on a substrate, a first conductive post disposed on the substrate and spaced apart from the first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip and the first conductive post, and a mold layer on the substrate that covers the first and second semiconductor chips and the first conductive post. The second semiconductor chip is supported on the first semiconductor chip by a first dummy solder terminal provided between the first and second semiconductor chips, and is coupled to the first conductive post by a first signal solder terminal provided between the first conductive post and the second semiconductor chip. The first dummy solder terminal is in direct contact with a top surface of the first semiconductor chip, and is electrically disconnected from the second semiconductor chip.

Abstract: A semiconductor package may include a circuit board, an interposer structure on the circuit board, a mold layer, and a first semiconductor chip and a second semiconductor chip spaced apart from each other in a first direction on a center region of the interposer structure and electrically connected to the interposer structure. The interposer structure may include a plurality of trenches in an edge region of the interposer structure and extending through the interposer structure. The mold layer may be in the plurality of trenches and may wrap the first and second semiconductor chips. The mold layer may include a penetrating portion in the plurality of trenches and a stack portion on the interposer structure. A bottom surface of the penetrating portion of the mold layer may be on a same plane as a bottom surface of the interposer structure.

Abstract: A method for manufacturing a semiconductor package includes mounting semiconductor chips on an interposer, forming a molding part between the semiconductor chips, surrounding a plurality of bumps between the semiconductor chips and the interposer with a first underfill, forming a sacrificial layer that covers the semiconductor chips, forming a wafer level molding layer that covers the sacrificial layer, performing a planarization process to expose upper sides of the semiconductor chips, form the sacrificial layer into a sacrificial pattern, and form the wafer level molding layer into a wafer level molding pattern, removing the sacrificial pattern, performing a sawing process to remove an outer edge of the semiconductor package, mounting the interposer on a side of a package board, surrounding a plurality of bumps between the package board and the interposer with a second underfill, and attaching a stiffener to an outer portion of the package board.