Abstract: Electromagnetic-wave-absorbing particles for a GHz band are represented by the following [Empirical Formula 1] and include M-type hexaferrite as a major phase: Sr1-xRxFey-2zM2zOa,??[Empirical Formula 1] where R is one or more selected from Ba, Ca, and La, M is one or more selected from Zn, Ti, and Zr, 0<x?0.8, 8?y?14, 0<z?1.5, and a is 19.

Abstract: An electromagnetic wave absorbing particle has a composition, which is represented by Formula 1 of Sr1-xRxFey-2zM2zOa and contains M-type hexaferrite as a main phase. In Formula 1, R is one or more substances selected from among Ba, Ca, and La, M is one or more substances selected from among Co, Ti, and Zr, 0<x?0.8, 8?y?14, 0<z?1.5, and a is equal to 19.

Abstract: An electromagnetic wave absorbing particle has a composition, which is represented by Formula 1 of Sr1-xRxFey-2zM2zOa and contains M-type hexaferrite as a main phase. In Formula 1, R is one or more substances selected from among Ba, Ca, and La, M is one or more substances selected from among Co, Ti, and Zr, 0<x?0.8, 8?y?14, 0<z?1.5, and a is equal to 19.

Abstract: Electromagnetic-wave-absorbing particles for a GHz band are represented by the following [Empirical Formula 1] and include M-type hexaferrite as a major phase: Sr1-xRxFey-2zM2zOa,??[Empirical Formula 1] where R is one or more selected from Ba, Ca, and La, M is one or more selected from Zn, Ti, and Zr, 0<x?0.8, 8?y?14, 0<z?1.5, and a is 19.

Abstract: An apparatus for controlling an object may include a communicator configured to communicate with a first user terminal and a second user terminal, and a processor configured to control a first object corresponding to a first user in a virtual world to be displayed, configured to control the first object to move in the virtual world in response to a movement control of the first user, configured to randomly select at least one candidate object in response to a morphing control of the first user, and configured to change the first object to a second object when the first user selects the second object from the at least one candidate object. Methods for controlling an object are also provided.

Abstract: An apparatus for controlling an object may include a communicator configured to communicate with a first user terminal and a second user terminal, and a processor configured to control a first object corresponding to a first user in a virtual world to be displayed, configured to control the first object to move in the virtual world in response to a movement control of the first user, configured to randomly select at least one candidate object in response to a morphing control of the first user, and configured to change the first object to a second object when the first user selects the second object from the at least one candidate object. Methods for controlling an object are also provided.

Abstract: An apparatus for controlling an object may include a communicator configured to communicate with a first user terminal and a second user terminal, and a processor configured to control a first object corresponding to a first user in a virtual world to be displayed, configured to control the first object to move in the virtual world in response to a movement control of the first user, configured to randomly select at least one candidate object in response to a morphing control of the first user, and configured to change the first object to a second object when the first user selects the second object from the at least one candidate object. Methods for controlling an object are also provided.

Abstract: An energy management system controlling energy flowing into or out of a battery is provided. The energy management system includes a data receiving unit receiving load data and energy data; a total load amount calculating unit calculating the total amount of power consumption by using the received load data; an energy generation amount calculating unit calculating the total amount of power generation by using the received energy data; a comparator comparing the calculated total amount of the power consumption with the calculated total amount of the power generation; and a switch connecting the battery to a power supply according to a comparison result.

Abstract: A magnetic composite includes a polymeric substrate and a magnetic material including a Z-type phase and represented by the following Chemical Formula: Ba1.5-xSr1.5-xCa2xM2Fe24O41??Chemical Formula wherein, in the Chemical Formula, M is at least one selected from Co, Ni, Cu, Mg, Mn, Ti, Al, Zn, and Zr, and 0?x<0.3.

Abstract: Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.

Abstract: A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.

Abstract: An apparatus for controlling an object may include a communicator configured to communicate with a first user terminal and a second user terminal, and a processor configured to control a first object corresponding to a first user in a virtual world to be displayed, configured to control the first object to move in the virtual world in response to a movement control of the first user, configured to randomly select at least one candidate object in response to a morphing control of the first user, and configured to change the first object to a second object when the first user selects the second object from the at least one candidate object. Methods for controlling an object are also provided.

Abstract: A chip to package interaction (CPI) test vehicle includes a chip including metal patterns contained in first and second sub-regions, respectively, and in which any one of the following comparable properties (a)˜(e) is the same among the first and second sub-regions, and another one of the properties (a)˜(e) is different among the first and second sub-regions: (a) size and shape of the sub-region, (b) metal density of the metal pattern, (c) type of the metal pattern, (d) distance between the sub-region and a center of the chip, (e) structure of the metal pattern.

Abstract: A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.

Abstract: Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.

Abstract: An energy management system controlling energy flowing into or out of a battery is provided. The energy management system includes a data receiving unit receiving load data and energy data; a total load amount calculating unit calculating the total amount of power consumption by using the received load data; an energy generation amount calculating unit calculating the total amount of power generation by using the received energy data; a comparator comparing the calculated total amount of the power consumption with the calculated total amount of the power generation; and a switch connecting the battery to a power supply according to a comparison result.

Abstract: Disclosed is a method of fabricating a semiconductor chip. The method includes forming a silicon layer; forming a first layer formed on the silicon layer and including a first seal ring surrounding a first chip area and a second seal ring surrounding a second chip area; and forming a second layer formed on the first layer and including a metal interconnection connecting one of the first and second chip areas and an external terminal.

Abstract: An FRAM device includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connected between the word lines and bit line bars. The first plate lines can be connected to upper electrodes of the first ferroelectric capacitors. The second plate lines can be connected to upper electrodes of the second ferroelectric capacitors. Thus, the first ferroelectric capacitors connected to the bit lines and the second ferroelectric capacitors connected to the bit line bars can be connected to the different plate lines, so that data can be output from any one of the bit line and the bit line bar. As a result, a layout of a core region can be simplified.

Abstract: An FRAM device can includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connected between the word lines and bit line bars. The first plate lines can be connected to upper electrodes of the first ferroelectric capacitors. The second plate lines can be connected to upper electrodes of the second ferroelectric capacitors. Thus, the first ferroelectric capacitors connected to the bit lines and the second ferroelectric capacitors connected to the bit line bars can be connected to the different plate lines, so that data can be output from any one of the bit line and the bit line bar. As a result, a layout of a core region can be simplified.