Abstract: A cap for use with devices, such as sensors. The cap includes protrusions on its underside, to restrict the movement of a liquid or a gel placed under cap. The protrusions may take the form of walls or pillars, depending on the application. As such, the cap retains the liquid or gel in a specified position on the device. For example, an electrochemical sensor may require a liquid electrolyte to remain in place over one or more electrodes. The protrusions may not extend far enough to touch the device, but rather leave a small gap. However, because of the surface tension of the liquid, the liquid generally stays within the protrusions.

Abstract: A cap for use with devices, such as sensors. The cap includes protrusions on its underside, to restrict the movement of a liquid or a gel placed under cap. The protrusions may take the form of walls or pillars, depending on the application. As such, the cap retains the liquid or gel in a specified position on the device. For example, an electrochemical sensor may require a liquid electrolyte to remain in place over one or more electrodes. The protrusions may not extend far enough to touch the device, but rather leave a small gap. However, because of the surface tension of the liquid, the liquid generally stays within the protrusions.

Abstract: A cap for use with devices, such as sensors. The cap includes protrusions on its underside, to restrict the movement of a liquid or a gel placed under cap. The protrusions may take the form of walls or pillars, depending on the application. As such, the cap retains the liquid or gel in a specified position on the device. For example, an electrochemical sensor may require a liquid electrolyte to remain in place over one or more electrodes. The protrusions may not extend far enough to touch the device, but rather leave a small gap. However, because of the surface tension of the liquid, the liquid generally stays within the protrusions.

Abstract: A cap for use with devices, such as sensors. The cap includes protrusions on its underside, to restrict the movement of a liquid or a gel placed under cap. The protrusions may take the form of walls or pillars, depending on the application. As such, the cap retains the liquid or gel in a specified position on the device. For example, an electrochemical sensor may require a liquid electrolyte to remain in place over one or more electrodes. The protrusions may not extend far enough to touch the device, but rather leave a small gap. However, because of the surface tension of the liquid, the liquid generally stays within the protrusions.

Abstract: Disclosed is an integrated circuit comprising a substrate having a major surface; a directional light sensor, the directional light sensor comprising a plurality of photodetectors on a region of said major surface, said plurality of photodetectors comprising a set of first photodetectors for detecting light from a first direction and a set of second photodetectors for detecting light from a second direction, wherein a first photodetector is located adjacent to a second photodetector; and a light blocking structure comprising a first portion extending from said major surface in between the first photodetector and the second photodetector; and a second portion extending from the first portion and at least partially overhanging at least one of the first photodetector and the second photodetector. A device including such an IC and a method of manufacturing such an IC are also disclosed.

Abstract: Disclosed is an integrated circuit comprising a substrate having a major surface; a directional light sensor, the directional light sensor comprising a plurality of photodetectors on a region of said major surface, said plurality of photodetectors comprising a set of first photodetectors for detecting light from a first direction and a set of second photodetectors for detecting light from a second direction, wherein a first photodetector is located adjacent to a second photodetector; and a light blocking structure comprising a first portion extending from said major surface in between the first photodetector and the second photodetector; and a second portion extending from the first portion and at least partially overhanging at least one of the first photodetector and the second photodetector. A device including such an IC and a method of manufacturing such an IC are also disclosed.

Abstract: A sensor module (130) for a catheter (110), the sensor module (130) comprising a biofilm detection unit (131) adapted for detecting a characteristic of a biofilm (132) and electric circuitry (135, 800) for providing an output signal indicative of a result of the detection.

Abstract: A sensor, electrically connected to transponder, is calibrated in an environment of operational use of the transponder. The calibrating uses as a reference a value of a parameter representative of the environment.

Abstract: A semiconductor device (1) and a method are disclosed for obtaining on a substrate (2) a multilayer structure (3) with a quantum well structure (4). The quantum well structure (4) comprises a semiconductor layer (5) sandwiched by insulating layers (6,6?), wherein the material of the insulating layers (6,6?) has preferably a high dielectric constant. In a FET the quantum wells (4,9) function as channels, allowing a higher drive current and a lower off current. Short channel effects are reduced. The multi-channel FET is suitable to operate even for sub-35 nm gate lengths. In the method the quantum wells are formed by epitaxial growth of the high dielectric constant material and the semiconductor material alternately on top of each other, preferably with MBE.

Abstract: Disclosed is an integrated circuit (IC) comprising a substrate (10) including a plurality of circuit elements and a metallization stack (20) covering said substrate for providing interconnections between the circuit elements, wherein the top metallization layer of said stack carries a plurality of metal portions (30) embedded in an exposed porous material (40) for retaining a liquid, said porous material laterally separating said plurality of metal portions. An electronic device comprising such an IC and a method of manufacturing such an IC are also disclosed.

Abstract: The invention relates to a semiconductor device (10) having a semiconductor body (2), comprising a field effect transistor, a first gate dielectric (6A) being formed on a first surface at the location of the channel region (5) and on it a first gate electrode (7), a sunken ion implantation (20) being executed from the first side of the semiconductor body (2) through and on both sides of the first gate electrode (7), which implantation results in a change of property of the silicon below the first gate electrode (7) compared to the silicon on both sides of the gate electrode 7) in a section of the channel region (5) remote from the first gate dielectric (6A), and on the second surface of the semiconductor body (2) a cavity (30) being provided therein by means of selective etching while use is made of the change of property of the silicon. A second gate (6B,8) is deposited in the cavity thus formed.

Abstract: The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises the steps of: doping the first and the second semiconductor region with a different dopant concentration, and oxidising, during the same processing step, both the first and the second semiconductor region under a temperature between 500° C. and 700° C., preferably between 500° C. and 650° C. A corresponding device is also provided. Using a low-temperature oxidation in combination with high doping levels results in an unexpected oxidation rate increase.

Abstract: A semiconductor on insulator semiconductor device has metal or silicide source and drain contact regions (38, 40), activated source and drain regions (30, 32) and a body region (34). The structure may be a double gated SOI structure or a fully depleted (FD) SOI structure. A sharp intergace and low resistance are achieved with a process that uses spacers (28) and which fully replaces the full thickness of a semiconductor layer with the contact regions.

Abstract: There is a method of manufacturing a semiconductor device with a semiconductor body comprising a semiconductor substrate and a semiconductor region which are separated from each other with an electrically insulating layer which includes a first and a second sub-layer which, viewed in projection, are adjacent to one another, wherein the first sub-layer has a smaller thickness than the second sub-layer, and wherein, in a first sub-region of the semiconductor region lying above the first sub-layer, at least one digital semiconductor element is formed and, in a second sub-region of the semiconductor region lying above the second sub-layer, at least one analog semiconductor element is formed. According to an example embodiment, the second sub-layer is formed in that the lower border thereof is recessed in the semiconductor body in relation to the lower border of the first sub-layer Fully depleted SOI devices are thus formed.

Abstract: A sensor module (130) for a catheter (110), the sensor module (130) comprising a biofilm detection unit (131) adapted for detecting a characteristic of a biofilm (132) and electric circuitry (135, 800) for providing an output signal indicative of a result of the detection.

Abstract: An implantable medical system for electrical recording and or providing therapy to a plurality of tissue sites without damage to surrounding blood vessels is disclosed comprising: an implant body having a plurality of therapy elements, the elements being hingedly attached at one end to the surface of the body and releasably extendable outward from the surface of the body at the other end; a release mechanism for each of the elements; and a coating material covering the body and the elements; wherein upon dissolution of the coating material after implantation, the release mechanism is capable of causing the elements to extend outward at one end from the surface of the body and into a plurality of tissue sites without damage to the surrounding blood vessels. The method of implanting the system into a body is also disclosed.

Abstract: A semiconductor device (1) and a method are disclosed for obtaining on a substrate (2) a multilayer structure (3) with a quantum well structure (4). The quantum well structure (4) comprises a semiconductor layer (5) sandwiched by insulating layers (6,6?), wherein the material of the insulating layers (6,6?) has preferably a high dielectric constant. In a FET the quantum wells (4,9) function as channels, allowing a higher drive current and a lower off current. Short channel effects are reduced. The multi-channel FET is suitable to operate even for sub-35 nm gate lengths. In the method the quantum wells are formed by epitaxial growth of the high dielectric constant material and the semiconductor material alternately on top of each other, preferably with MBE.

Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) comprising a semiconductor substrate (2) and a semiconductor region (3) which are separated from each other by means of an electrically insulating layer (4) which comprises a first and second sublayer (4A, 4B) that are viewed in projection adjacent to each other, whereby the first sublayer (4A) is provided with a smaller thickness than the second sublayer (4B) and whereby in a first subregion (3B) of the semiconductor region (3) lying above the first sublayer (4A) at least one digital semiconductor element (5) is formed and in a second subregion (3B) of the semiconductor region (3) lying above the second sublayer (4B) at least one analogue semiconductor element (6) is formed. According to the invention the second sublayer (4B) is formed in such a way that the lower border thereof is in relation to the lower border of the first sublayer (4A) formed sunken in the semiconductor body (1).

Abstract: Consistent with example embodiments a semiconductor device and a method are disclosed for obtaining on a substrate a multilayer structure with a quantum well structure. The quantum well structure comprises a semiconductor layer sandwiched by insulating layers, wherein the material of the insulating layers has preferably a high dielectric constant. In a field effect transistor (FET) the quantum wells function as channels, allowing a higher drive current and a lower off current. Short channel effects are reduced. The multi-channel FET is suitable to operate even for sub-35 nm gate lengths. In the method the quantum wells are formed by epitaxial growth of the high dielectric constant material and the semiconductor material alternately on top of each other, preferably with molecular beam epitaxy (MBE).

Abstract: The present invention discloses a method of forming a double gate field effect transistor device, and such a device formed with the method. One starts with a semiconductor-on-insulator substrate, and forms a first gate, source, drain and extensions, and prepares the second gate. Then the substrate is bonded to a second carrier, exposing a second side of the semiconductor layer. Next, an annealing step is performed as a diffusionless annealing, which has the advantage that the semiconductor layer not only has a substantially even thickness, but also has a substantially flat surface. This ensures the best possible annealing action of said annealing step. Very sharp abruptness of the extensions is achieved, with very high activation of the dopants.