Abstract: An ADC circuit is provided. The ADC circuit includes a continuous-time ?? ADC including an integration circuit configured to integrate a difference signal, a switching circuit configured to perform switching to supply an analog signal supplied to an input terminal to the ?? ADC in a first period and to supply a voltage signal corresponding to a voltage output from the integration circuit at an end of the first period in a second period after the first period, and a holding circuit configured to hold the voltage signal corresponding to the voltage output from the integration circuit at the end of the first period and provide the voltage signal to the ?? ADC via the switching circuit in the second period. The ?? ADC is configured to be able to perform gain adjustment for an analog signal input to the ?? ADC.

Abstract: A photoelectric conversion apparatus includes at least two substrates including a first substrate including a pixel unit in which a plurality of pixels each including a photoelectric conversion element and an amplification transistor are arranged in an array, and a second substrate including a memory unit configured to hold an analog signal output by the pixel unit. A current source, and a transistor connected to a node through which signals output from the current source and the amplification transistor pass are arranged on a substrate different from the first substrate out of the at least two substrates. The transistor can switch an operation of resetting a potential of the node, and an operation of clipping a potential of the node.

Abstract: A photoelectric conversion device includes a first substrate and a second substrate. A plurality of photoelectric conversion circuits is disposed on the first substrate. A plurality of floating diffusion circuits, a first switch, and a plurality of amplification transistors are disposed on the second substrate. The plurality of floating diffusion circuits is connected to the plurality of photoelectric conversion circuits. The first switch is configured to connect a first floating diffusion circuit and a second floating diffusion circuit in the plurality of floating diffusion circuits. The plurality of amplification transistors is configured to output signals based on potentials of the plurality of floating diffusion circuits.

Abstract: A photoelectric conversion apparatus includes a plurality of pixels arranged across a plurality of rows and a plurality of columns, a plurality of column circuits corresponding to the plurality of columns respectively, and a control portion. Each of the plurality of column circuits includes a comparison circuit including a first input node to which a pixel signal is input from a plurality of pixels in a column corresponding thereto, and a second input node to which a reference signal is input, and a buffer circuit including an output node for outputting the reference signal to the comparison circuit of the column corresponding thereto. The control portion is capable of controlling a potential of the output node of the buffer circuit included in each of the plurality of column circuits to a predetermined potential.

Abstract: Photoelectric conversion device includes first block of pixels, that is controlled as a block to perform in-pixel readout operation in a predetermined period, second block of pixels, that is controlled as a block to perform in-pixel readout operation in a period after the predetermined period, and third block different from the first and second blocks. In the predetermined period, amount of current flowing through current source in the third block is smaller than amount of current flowing through current source in the first block and amount of current flowing through current source in the second block. In the predetermined period, amount of current flowing through current source in the second block is not more than amount of current flowing through current source in the first block.

Abstract: A photoelectric conversion device including a pixel array and a read circuit having a plurality of column circuits configured to read signals from the pixel array. Each pixel includes a photoelectric converter to accumulate charges corresponding to incident light, a charge-voltage converter, a transporter to transport charges from the photoelectric converter to the charge-voltage converter, a first amplification transistor to amplify a voltage of the charge-voltage converter, a first current source to supply a first current to the first amplification transistor, a storage to hold an output of the first amplification transistor, and a second amplification transistor to amplify a voltage supplied from the storage. Each column circuit includes a second current source to supply a second current to the second amplification transistor. The first current is smaller than the second current.

Abstract: In a photoelectric conversion device, in a first period in which a respective different offset voltage is supplied to a comparator included in each of a plurality of AD conversion circuits, a control unit performs control to bring the offset voltage into a first driving state in which a voltage change amount per unit time of the offset voltage is a first voltage amount, and, in a second period in which a ramp signal is supplied to the comparator included in each of the plurality of AD conversion circuits, the control unit performs control to bring the ramp signal into a second driving state in which a voltage change amount per unit time of the ramp signal is a second voltage amount, wherein the first voltage amount is larger the second voltage amount.

Abstract: A detection device includes a pixel including a photodiode, an amplification transistor having a gate connected to an output node of the photodiode, a reset transistor configured to reset the photodiode, and a selection transistor; a signal line connected to the pixel; and a readout circuit configured to read out a signal from the pixel via the signal line, wherein the readout circuit includes an A/D converter configured to A/D-convert the signal input from the pixel via the signal line, and the A/D converter performs an offset cancellation operation of holding a signal level corresponding to a signal generated by the photodiode while canceling an offset of the A/D converter, and performs first A/D conversion for a change of the signal level obtained after the offset cancellation operation.

Abstract: A radiation detector includes a pixel region, a first output line, a second output line, a first signal processing circuit connected to the first output line, and a second signal processing circuit connected to the second output line, wherein the first signal processing circuit includes a first drive circuit connected to the first output line, a first analog-to-digital (AD) conversion circuit, a first holding circuit, and a first scanning circuit, wherein the second signal processing circuit includes a second drive circuit connected to the second output line, a second AD conversion circuit, and a second holding circuit, wherein the first signal processing circuit is disposed between the pixel region and the second signal processing circuit in a planar view, and wherein in the planar view, the first scanning circuit is disposed between the pixel region and the second AD conversion circuit.

Abstract: A photoelectric conversion device includes pixels each including a plurality of photoelectric conversion elements and arranged in a matrix, and a control circuit that controls the pixels on row-by-row. Each pixel may output a first signal corresponding to charge generated by the first photoelectric conversion element and a second signal corresponding to charge generated by the first and second photoelectric conversion elements. The control circuit performs a first reset operation and a first readout operation for reading out the second signal on pixels in a first row, and performs a second reset operation, a second readout operation for reading out the first signal, and a third readout operation for reading out the second signal on pixels in a second row. The control circuit performs a third reset operation on pixels of any one of rows in a period one before a period during which the second reset operation is performed.

Abstract: A photoelectric conversion device includes a pixel array having aperture pixels arranged so as to form rows and columns, signal lines arranged in the pixel array so as to allow readout of signals from the aperture pixels, current sources connected to the signal lines, a first voltage supply line configured to supply a first reference voltage to the aperture pixels, a first pad connected to the first voltage supply line, a bias circuit configured to supply a bias voltage to the current sources, a second voltage supply line electrically separated from the first voltage supply line, and configured to supply a second reference voltage to the bias circuit, and a second pad connected to the second voltage supply line.

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion region provided with a plurality of photoelectric conversion units, a signal processing unit configured to process an output signal from the plurality of photoelectric conversion units, and a processing unit configured to perform processing based on a learned model on data processed by the signal processing unit. The photoelectric conversion apparatus also includes a first pad connected to the processing unit and a second pad connected to the signal processing unit.

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion region provided with a plurality of photoelectric conversion units, a signal processing unit configured to process an output signal from the plurality of photoelectric conversion units, and a processing unit configured to perform processing based on a learned model on data processed by the signal processing unit. The photoelectric conversion apparatus also includes a first pad connected to the processing unit and a second pad connected to the signal processing unit.

Abstract: A unit circuit includes a photoelectric conversion element, an output transistor including an input node and configured to output a signal based on a charge from the photoelectric conversion element, a reset transistor, and a first transistor connected to the input node and configured to change a capacitance of the input node. A first control signal supplied to a gate electrode of the first transistor has at least three types of voltages.

Abstract: In a photoelectric conversion device, in a first period in which a respective different offset voltage is supplied to a comparator included in each of a plurality of AD conversion circuits, a control unit performs control to bring the offset voltage into a first driving state in which a voltage change amount per unit time of the offset voltage is a first voltage amount, and, in a second period in which a ramp signal is supplied to the comparator included in each of the plurality of AD conversion circuits, the control unit performs control to bring the ramp signal into a second driving state in which a voltage change amount per unit time of the ramp signal is a second voltage amount, wherein the first voltage amount is larger the second voltage amount.

Abstract: The photoelectric conversion device includes a plurality of pixels arranged to form a plurality of rows and a plurality of columns, wherein each of the plurality of pixels includes a photoelectric conversion unit, a plurality of output lines, wherein at least two of the plurality of output lines are arranged in each of the plurality of columns and each of the plurality of output lines is connected to a pixel of a corresponding column, a scanning circuit configured to sequentially select plural rows that are a part of the plurality of rows, and a selection circuit that includes an input unit to which a control signal different from a control signal input to the scanning circuit is input and is configured to select a row that is the other part of the plurality of rows.

Abstract: A photoelectric conversion device includes a first substrate and a second substrate. A plurality of photoelectric conversion circuits is disposed on the first substrate. A plurality of floating diffusion circuits, a first switch, and a plurality of amplification transistors are disposed on the second substrate. The plurality of floating diffusion circuits is connected to the plurality of photoelectric conversion circuits. The first switch is configured to connect a first floating diffusion circuit and a second floating diffusion circuit in the plurality of floating diffusion circuits. The plurality of amplification transistors is configured to output signals based on potentials of the plurality of floating diffusion circuits.

Abstract: Since a failure related to an output from a sensor is not detected from an image signal and a failure of the sensor is not detected from an output from the sensor in a system including the sensor for abnormality detection, it is not possible to perform the abnormality detection and to indicate the abnormality to the outside of the system. An apparatus includes a pixel area including multiple pixels, multiple sensors, a processing unit that compares signals based on outputs from the multiple sensors with each other, an output unit that outputs information based on a result of comparison.

Abstract: A photoelectric conversion device includes pixels each including a plurality of photoelectric conversion elements and arranged in a matrix, and a control circuit that controls the pixels on row-by-row. Each pixel may output a first signal corresponding to charge generated by the first photoelectric conversion element and a second signal corresponding to charge generated by the first and second photoelectric conversion elements. The control circuit performs a first reset operation and a first readout operation for reading out the second signal on pixels in a first row, and performs a second reset operation, a second readout operation for reading out the first signal, and a third readout operation for reading out the second signal on pixels in a second row. The control circuit performs a third reset operation on pixels of any one of rows in a period one before a period during which the second reset operation is performed.

Abstract: A photoelectric conversion device includes a pixel array having aperture pixels arranged so as to form rows and columns, signal lines arranged in the pixel array so as to allow readout of signals from the aperture pixels, current sources connected to the signal lines, a first voltage supply line configured to supply a first reference voltage to the aperture pixels, a first pad connected to the first voltage supply line, a bias circuit configured to supply a bias voltage to the current sources, a second voltage supply line electrically separated from the first voltage supply line, and configured to supply a second reference voltage to the bias circuit, and a second pad connected to the second voltage supply line.