Patents by Inventor Yu Arishima
Yu Arishima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10447953Abstract: An imaging apparatus includes first and second substrates respectively including first pixels and second pixels arranged thereon. The first pixels each includes a first photoelectric conversion unit and a first transistor configured to output a first signal based on a charge generated in the first photoelectric conversion unit. The second pixels each includes a second photoelectric conversion unit and a second transistor configured to output a second signal based on a charge generated in the second photoelectric conversion unit. The first and second substrates are stacked via an insulation film.Type: GrantFiled: November 10, 2017Date of Patent: October 15, 2019Assignee: CANON KABUSHIKI KAISHAInventors: Yu Arishima, Hirofumi Totsuka
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Publication number: 20180316881Abstract: A solid-state imaging device includes pixels forming pixel rows, and a scanning circuit that performs a reset operation of a photoelectric converter and a readout operation of a pixel signal based on charges generated by the photoelectric converter including charge transfer from the photoelectric converter to the holding unit. The pixel rows include imaging rows and focus detection rows. The scanning circuit performs an image capture scan of the imaging rows and a focus detection scan of the focus detection rows, independently, such that signals of the focus detection rows are output after signals from the imaging rows. The scanning circuit performs the focus detection scan such that the reset operation on the focus detection row does not overlap with a charge transfer period on an imaging row belonging to a unit pixel row neighboring a unit pixel row to which a focus detection row under the reset operation belongs.Type: ApplicationFiled: April 18, 2018Publication date: November 1, 2018Inventors: Yu Arishima, Yasuhiro Oguro, Shinichiro Shimizu, Satoshi Koizumi, Masaya Ogino
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Publication number: 20180146145Abstract: An imaging apparatus includes first and second substrates respectively including first pixels and second pixels arranged thereon. The first pixels each includes a first photoelectric conversion unit and a first transistor configured to output a first signal based on a charge generated in the first photoelectric conversion unit. The second pixels each includes a second photoelectric conversion unit and a second transistor configured to output a second signal based on a charge generated in the second photoelectric conversion unit. The first and second substrates are stacked via an insulation film.Type: ApplicationFiled: November 10, 2017Publication date: May 24, 2018Inventors: Yu Arishima, Hirofumi Totsuka
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Patent number: 9549139Abstract: The imaging apparatus has a plurality of pixels each of which has a plurality of photoelectric conversion units; generates a plurality of first combined signals obtained by combining signals based on electric charges of photoelectric conversion units in one side with each other, and a plurality of second signals obtained by combining signals based on electric charges of the plurality of photoelectric conversion units with each other; and outputs a part of the first combined signals out of the plurality of first combined signals.Type: GrantFiled: August 6, 2014Date of Patent: January 17, 2017Assignee: Canon Kabushiki KaishaInventors: Yasuji Ikeda, Hiroki Hiyama, Yu Arishima, Seiji Hashimoto
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Patent number: 9368668Abstract: A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.Type: GrantFiled: June 26, 2014Date of Patent: June 14, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Koichi Tazoe, Yu Arishima, Akira Okita, Kazuki Ohshitanai, Yasuharu Ota
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Patent number: 9318519Abstract: One embodiment according to the present invention is an imaging apparatus including a pixel. The pixel includes first and second photoelectric conversion units, a floating diffusion portion, and first and second transfer transistors. The first and second transfer transistors are configured to transfer electric carriers generated respectively at the first and second photoelectric conversion units to the floating diffusion portion. The imaging apparatus includes a first conductive member electrically connected to the gate electrode of the first transfer transistor, a second conductive member electrically connected to the gate electrode of the second transfer transistor, and a control unit. The distance of closest proximity between the first conductive member and the floating diffusion portion is longer than the distance of closest proximity between the second conductive member and the floating diffusion portion.Type: GrantFiled: April 23, 2014Date of Patent: April 19, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Yoichi Wada, Akira Okita, Yu Arishima
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Patent number: 9276036Abstract: If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.Type: GrantFiled: September 3, 2013Date of Patent: March 1, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Yu Arishima, Takashi Matsuda, Toru Koizumi
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Patent number: 9232164Abstract: An image sensor includes a pixel unit having first and second photoelectric converters, an amplifier provided commonly for the first and second photoelectric converters, first and second transfer transistors configured to respectively transfer charges generated in the first and second electric converters to an input portion of the amplifier. The signal read out by the readout portion includes a first optical signal read out in a state in which charges are transferred from the first photoelectric converter to the input portion by the first transfer transistor, and a second optical signal read out, after the readout of the first optical signal, in a state in which charges are transferred from the second photoelectric converter to the input portion by the second transfer transistor.Type: GrantFiled: July 30, 2013Date of Patent: January 5, 2016Assignee: Canon Kabushiki KaishaInventors: Masaaki Minowa, Akira Okita, Yu Arishima, Masaaki Iwane, Kazuki Ohshitanai
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Patent number: 9196645Abstract: A photoelectric conversion device includes: a first semiconductor region of a first conductivity type, which configures a first photoelectric conversion element; a second semiconductor region of the first conductivity type, which configures a second photoelectric conversion element; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the first conductivity type; a first gate electrode, configuring a first transfer transistor conjointly; and a second gate electrode, configuring a second transfer transistor. At a side of the first gate electrode which is toward the first semiconductor region in plan view of the surface of the semiconductor substrate, a length of the side of the first gate electrode toward the first semiconductor region, is shorter than a length of the active region, and a length of the side of the first gate electrode toward the first semiconductor region, is longer than a length of the first semiconductor region.Type: GrantFiled: June 26, 2014Date of Patent: November 24, 2015Assignee: CANON KABUSHIKI KAISHAInventors: Koichi Tazoe, Yu Arishima, Akira Okita, Kazuki Ohshitanai, Yasuharu Ota
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Patent number: 9172951Abstract: It is disclosed that, as an embodiment, a test circuit includes a test signal supply unit configured to supply a test signal via a signal line to signal receiving units provided in a plurality of columns, wherein the test signal supply unit is a voltage buffer or a current buffer, and the test circuit has a plurality of test signal supply units and a plurality of signal lines, and wherein at least one test signal supply unit is electrically connected to one signal line different from a signal line to which another test signal supply unit is electrically connected.Type: GrantFiled: November 25, 2014Date of Patent: October 27, 2015Assignee: CANON KABUSHIKI KAISHAInventors: Akira Okita, Masaaki Iwane, Yu Arishima, Masaaki Minowa
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Publication number: 20150281610Abstract: Provided is a solid-state imaging apparatus, including: a plurality of photoelectric conversion elements each configured to generate charges by photoelectric conversion; and a plurality of transfer transistors, which are connected to the plurality of photoelectric conversion elements, respectively, each configured to transfer the generated charges to the same floating diffusion, in which the plurality of transfer transistors are each configured to be on/off controlled based on a voltage input to a gate terminal thereof, and a length of a period during which the voltage input to the gate terminal changes when a corresponding one of the plurality of transfer transistors is switched from on to off varies from one transfer transistor to another.Type: ApplicationFiled: March 24, 2015Publication date: October 1, 2015Inventors: Yasuharu Ota, Kazuki Ohshitanai, Yu Arishima
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Patent number: 9137468Abstract: An output impedance of a drive unit configured to drive a drive line is set to be varied during a period in which a drive pulse for setting each transfer transistor to be in a conductive state is supplied and during a period in which a drive pulse for setting each transfer transistor to be in a non-conductive state is supplied.Type: GrantFiled: May 7, 2014Date of Patent: September 15, 2015Assignee: CANON KABUSHIKI KAISHAInventors: Akira Okita, Yu Arishima, Yasuharu Ota
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Publication number: 20150077570Abstract: It is disclosed that, as an embodiment, a test circuit includes a test signal supply unit configured to supply a test signal via a signal line to signal receiving units provided in a plurality of columns, wherein the test signal supply unit is a voltage buffer or a current buffer, and the test circuit has a plurality of test signal supply units and a plurality of signal lines, and wherein at least one test signal supply unit is electrically connected to one signal line different from a signal line to which another test signal supply unit is electrically connected.Type: ApplicationFiled: November 25, 2014Publication date: March 19, 2015Inventors: Akira Okita, Masaaki Iwane, Yu Arishima, Masaaki Minowa
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Publication number: 20150062394Abstract: The imaging apparatus has a plurality of pixels each of which has a plurality of photoelectric conversion units; generates a plurality of first combined signals obtained by combining signals based on electric charges of photoelectric conversion units in one side with each other, and a plurality of second signals obtained by combining signals based on electric charges of the plurality of photoelectric conversion units with each other; and outputs a part of the first combined signals out of the plurality of first combined signals.Type: ApplicationFiled: August 6, 2014Publication date: March 5, 2015Inventors: Yasuji Ikeda, Hiroki Hiyama, Yu Arishima, Seiji Hashimoto
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Patent number: 8928791Abstract: A signal for focus detection is generated by a first operation, in which a signal of at least one photoelectric conversion element included in a photoelectric conversion unit is read to an input node of an amplification unit and the signal is supplied to a common output line by the amplification unit and signals for forming an image are generated by a second operation, in which a signal of another photoelectric conversion element included in the same photoelectric conversion unit as that including the at least one photoelectric conversion element from which the signal has been read in the first operation is read to the input node of the amplification unit while holding the signal read in the first operation using the amplification unit and the signals are supplied to the common output line by the amplification unit.Type: GrantFiled: May 23, 2014Date of Patent: January 6, 2015Assignee: Canon Kabushiki KaishaInventors: Akira Okita, Yu Arishima, Masaaki Minowa
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Publication number: 20150001377Abstract: A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.Type: ApplicationFiled: June 26, 2014Publication date: January 1, 2015Inventors: Koichi Tazoe, Yu Arishima, Akira Okita, Kazuki Ohshitanai, Yasuharu Ota
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Publication number: 20150001589Abstract: A photoelectric conversion device includes: a first semiconductor region of a first conductivity type, which configures a first photoelectric conversion element; a second semiconductor region of the first conductivity type, which configures a second photoelectric conversion element; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the first conductivity type; a first gate electrode, configuring a first transfer transistor conjointly; and a second gate electrode, configuring a second transfer transistor. At a side of the first gate electrode which is toward the first semiconductor region in plan view of the surface of the semiconductor substrate, a length of the side of the first gate electrode toward the first semiconductor region, is shorter than a length of the active region, and a length of the side of the first gate electrode toward the first semiconductor region, is longer than a length of the first semiconductor region.Type: ApplicationFiled: June 26, 2014Publication date: January 1, 2015Inventors: Koichi Tazoe, Yu Arishima, Akira Okita, Kazuki Ohshitanai, Yasuharu Ota
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Patent number: 8921855Abstract: It is disclosed that, as an embodiment, a test circuit includes a test signal supply unit configured to supply a test signal via a signal line to signal receiving units provided in a plurality of columns, wherein the test signal supply unit is a voltage buffer or a current buffer, and the test circuit has a plurality of test signal supply units and a plurality of signal lines, and wherein at least one test signal supply unit is electrically connected to one signal line different from a signal line to which another test signal supply unit is electrically connected.Type: GrantFiled: March 2, 2012Date of Patent: December 30, 2014Assignee: Canon Kabushiki KaishaInventors: Akira Okita, Masaaki Iwane, Yu Arishima, Masaaki Minowa
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Publication number: 20140333817Abstract: An output impedance of a drive unit configured to drive a drive line is set to be varied during a period in which a drive pulse for setting each transfer transistor to be in a conductive state is supplied and during a period in which a drive pulse for setting each transfer transistor to be in a non-conductive state is supplied.Type: ApplicationFiled: May 7, 2014Publication date: November 13, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Akira Okita, Yu Arishima, Yasuharu Ota
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Publication number: 20140320690Abstract: One embodiment according to the present invention is an imaging apparatus including a pixel. The pixel includes first and second photoelectric conversion units, a floating diffusion portion, and first and second transfer transistors. The first and second transfer transistors are configured to transfer electric carriers generated respectively at the first and second photoelectric conversion units to the floating diffusion portion. The imaging apparatus includes a first conductive member electrically connected to the gate electrode of the first transfer transistor, a second conductive member electrically connected to the gate electrode of the second transfer transistor, and a control unit. The distance of closest proximity between the first conductive member and the floating diffusion portion is longer than the distance of closest proximity between the second conductive member and the floating diffusion portion.Type: ApplicationFiled: April 23, 2014Publication date: October 30, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Yoichi Wada, Akira Okita, Yu Arishima