Patents by Inventor Yu-Chang Lin

Yu-Chang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210137328
    Abstract: An automatic cleaning apparatus is configured to clean a floor and emit ultraviolet light for sterilizing the floor in a cleaning mode. Upon detecting that a wall is nearby, the automatic cleaning apparatus emits ultraviolet light toward a corner formed by the floor and the wall for sterilization.
    Type: Application
    Filed: May 21, 2020
    Publication date: May 13, 2021
    Applicant: NKFG Corporation
    Inventors: Te-Li TIEN, Shao-Wei CHIU, Yu-De LIN, Hsiang-En CHIU, Han-Chien CHENG, Chih-Chang LIN
  • Patent number: 11005074
    Abstract: A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 ?m and less than or equal to 5 ?m.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: May 11, 2021
    Assignee: INNOLUX CORPORATION
    Inventors: Shun-Yuan Hu, Tsau-Hua Hsieh, Tzu-Min Yan, Ming-Chang Lin, Yu-Hsin Liu, Shu-Ming Kuo, Ming-I Chao
  • Patent number: 10998058
    Abstract: The present disclosure describes an adjustment circuit that can be used, for example, in a memory system with partitioned memory blocks. The adjustment circuit can include a controller circuit, a timer circuit, and a temperature adaptive reference (TAR) generator. The controller circuit can be configured to output a control signal that indicates a memory type (e.g., code memory or data memory) associated with a partitioned memory block. The timer circuit can be configured to output a timing signal for a read memory operation based on the control signal. And, the TAR generator can be configured to adjust a verify reference current for a verify memory operation based on temperature, where the verify reference current is set based on the control signal.
    Type: Grant
    Filed: January 7, 2020
    Date of Patent: May 4, 2021
    Inventors: Yu-Der Chih, Hung-Chang Yu, Ku-Feng Lin
  • Publication number: 20210125943
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.
    Type: Application
    Filed: October 23, 2019
    Publication date: April 29, 2021
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Jian-Hsing LEE, Shao-Chang HUANG, Chih-Hsuan LIN, Yu-Kai WANG, Karuna NIDHI, Hwa-Chyi CHIOU
  • Publication number: 20210118674
    Abstract: The present disclosure provides a method for semiconductor manufacturing in accordance with some embodiments. The method includes providing a substrate and a patterning layer over the substrate and forming a plurality of openings in the patterning layer. The substrate includes a plurality of features to receive a treatment process. The openings partially overlap with the features from a top view while a portion of the features remains covered by the patterning layer. Each of the openings is free of concave corners. The method further includes performing an opening expanding process to enlarge each of the openings and performing a treatment process to the features through the openings. After the opening expanding process, the openings fully overlap with the features from the top view.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Yu-Tien Shen, Ya-Wen Yeh, Wei-Liang Lin, Ya Chang, Yung-Sung Yen, Wei-Hao Wu, Li-Te Lin, Ru-Gun Liu, Kuei-Shun Chen
  • Publication number: 20210083056
    Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm?3 and about 1020 cm?3.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Yu-Chang Lin, Tien-Shun Chang, Chun-Feng Nieh, Huicheng Chang
  • Patent number: 10920862
    Abstract: An actuator having a manual rotating mechanism and an anti-pinch mechanism includes an actuating body, a manual rotating mechanism, and an anti-pinch mechanism. The actuating body has a stretchable tube. The manual rotating mechanism has a sleeve assembly and a manual rotating wheel. The sleeve assembly has a central shaft and a connecting plate. The anti-pinch mechanism has a clutch wheel which is fixed to the stretchable tube and is movably sleeved around the central shaft. When the stretchable tube is blocked during a retraction stroke, the clutch wheel is detached from the connecting plate such that the clutch wheel follows the stretchable tube to idle. Therefore, the stretchable tube can be manually rotated to retract and the anti-pinch effect during the stretchable tube being retracted can be achieved.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: February 16, 2021
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Yu-Chang Lin
  • Patent number: 10916546
    Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: February 9, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu
  • Publication number: 20200411672
    Abstract: A finFET device and methods of forming a finFET device are provided. The method includes depositing a dummy gate over and along sidewalls of a fin extending upwards from a semiconductor substrate, forming a first gate spacer along a sidewall of the dummy gate, and plasma-doping the first gate spacer with carbon to form a carbon-doped gate spacer. The method further includes forming a source/drain region adjacent a channel region of the fin and diffusing carbon from the carbon-doped gate spacer into a first region of the fin to provide a first carbon-doped region. The first carbon-doped region is disposed between at least a portion of the source/drain region and the channel region of the fin.
    Type: Application
    Filed: September 6, 2020
    Publication date: December 31, 2020
    Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Wei-Ting Chien, Chih-Pin Tsao, Hou-Ju Li, Tien-Shun Chang
  • Publication number: 20200395462
    Abstract: A semiconductor device, and a method of manufacturing, is provided. A dummy gate is formed on a semiconductor substrate. An interlayer dielectric (ILD) is formed over the semiconductor fin. A dopant is implanted into the ILD. The dummy gate is removed and an anneal is performed on the ILD. The implantation and the anneal lead to an enhancement of channel resistance by a reduction in gate dielectric thickness and to an enlargement of critical dimensions of a metal gate.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 17, 2020
    Inventors: Yu-Chang Lin, Tien-Shun Chang, Szu-Ying Chen, Chun-Feng Nieh, Sen-Hong Syue, Huicheng Chang
  • Publication number: 20200395481
    Abstract: An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 17, 2020
    Inventors: Jyun-Hao Lin, Chun-Feng Nieh, Yu-Chang Lin, Huicheng Chang
  • Patent number: 10863820
    Abstract: An elevating post includes a transmission (10), a driver (20), an outer tube (30) and a moving assembly (40). The driver (20) is connected to the transmission (10). The outer tube (30) receives the transmission (10) and the driver (20) and has a tube body (31) with a longitudinal trough (311). Two closed sections (312, 313) are separately disposed outside two ends of the longitudinal trough (311). The moving assembly (40) is operatably connected to the transmission (10) and has a plate (43) protruding from the tube body (31) by passing through the longitudinal trough (311) and being movable in the longitudinal trough (311).
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: December 15, 2020
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Yu-Chang Lin
  • Publication number: 20200378483
    Abstract: An actuator having a manual rotating mechanism and an anti-pinch mechanism includes an actuating body, a manual rotating mechanism, and an anti-pinch mechanism. The actuating body has a stretchable tube. The manual rotating mechanism has a sleeve assembly and a manual rotating wheel. The sleeve assembly has a central shaft and a connecting plate. The anti-pinch mechanism has a clutch wheel which is fixed to the stretchable tube and is movably sleeved around the central shaft. When the stretchable tube is blocked during a retraction stroke, the clutch wheel is detached from the connecting plate such that the clutch wheel follows the stretchable tube to idle. Therefore, the stretchable tube can be manually rotated to retract and the anti-pinch effect during the stretchable tube being retracted can be achieved.
    Type: Application
    Filed: July 15, 2019
    Publication date: December 3, 2020
    Inventor: Yu-Chang LIN
  • Publication number: 20200375350
    Abstract: An elevating post includes a transmission (10), a driver (20), an outer tube (30) and a moving assembly (40). The driver (20) is connected to the transmission (10). The outer tube (30) receives the transmission (10) and the driver (20) and has a tube body (31) with a longitudinal trough (311). Two closed sections (312, 313) are separately disposed outside two ends of the longitudinal trough (311). The moving assembly (40) is operatably connected to the transmission (10) and has a plate (43) protruding from the tube body (31) by passing through the longitudinal trough (311) and being movable in the longitudinal trough (311).
    Type: Application
    Filed: June 28, 2019
    Publication date: December 3, 2020
    Inventor: Yu-Chang LIN
  • Publication number: 20200359783
    Abstract: A power-driven table stand with combining mechanotronics includes: a horizontal bar structure (10); a pair of supporters (20), connected at two sides of the horizontal bar structure (10); a pair of vertical post structures (30), connected to each of the supporters (20) and having a motor (31); and an electrical device (40), having a controller (41) and a guide wiring (45), wherein the controller (40) is disposed on the horizontal bar structure (10), the guide wiring (45) is stored and hidden in the horizontal bar structure (10) and each of the supporters (20), and electrically connected to the controller (41) and the motor (31). Accordingly, power wires and signal wires can be effectively and properly stored and hidden.
    Type: Application
    Filed: May 13, 2020
    Publication date: November 19, 2020
    Inventors: John Aage KOEHN, Yu-Chang LIN
  • Publication number: 20200359784
    Abstract: An electric table stand for simple assembly and adjustment includes a beam structure (10), support bars (20), and upright structures (30). Each of the support bars (20) includes a base (21) and a plurality of arms (211, 212, 213) extended from the base (21), wherein an accommodating space (A) is defined by the base (21) and the arms (211, 212, 213). One arm (213) of each of the support bars (20) supports one end of the beam structure (10), and the beam structure (10) is operatively moved in or out of the accommodating space (A). The upright structures (30) are connected to the support bars (20). Accordingly, it is easy to adjust and position each support bar (20) and each upright structure (30) on the beam structure (10).
    Type: Application
    Filed: May 13, 2020
    Publication date: November 19, 2020
    Inventors: JOHN AAGE KOEHN, Yu-Chang LIN
  • Patent number: 10797059
    Abstract: The present invention provides a method of designing a layout of a static random access memory (SRAM) pattern, the method includes the following steps: firstly, a target pattern is provided, and according to the target pattern, a plurality of first patterns and a first dummy pattern are formed in a substrate, the first pattern that disposed at the outermost boundary of the first patterns is defined as a first edge pattern, and the first dummy pattern is disposed adjacent to the first edge pattern, next, the first dummy pattern is removed, and afterwards, according to the target pattern, a plurality of second patterns are formed in the substrate, the second patterns comprises a second edge pattern that is disposed between the first edge pattern and an original position of the first dummy pattern.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: October 6, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Chang Lin, Wei-Cyuan Lo, Yung-Feng Cheng
  • Patent number: 10770570
    Abstract: A finFET device and methods of forming a finFET device are provided. The method includes depositing a dummy gate over and along sidewalls of a fin extending upwards from a semiconductor substrate, forming a first gate spacer along a sidewall of the dummy gate, and plasma-doping the first gate spacer with carbon to form a carbon-doped gate spacer. The method further includes forming a source/drain region adjacent a channel region of the fin and diffusing carbon from the carbon-doped gate spacer into a first region of the fin to provide a first carbon-doped region. The first carbon-doped region is disposed between at least a portion of the source/drain region and the channel region of the fin.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: September 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Wei-Ting Chien, Chih-Pin Tsao, Hou-Ju Li, Tien-Shun Chang
  • Patent number: 10763363
    Abstract: An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: September 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jyun-Hao Lin, Chun-Feng Nieh, Huicheng Chang, Yu-Chang Lin
  • Patent number: 10736471
    Abstract: A foam soap-providing machine with function of recycling soap-liquid, which comprises: a container containing a soap-liquid and having a soap-releasing portion; a shell-group including at least two detachable shell-bodies combinedly disposed on the outer peripheral surface of the soap-releasing portion; and a faucet mounted on the upper end of the soap-releasing portion and having a soap-feeding portion provided for flowing out the pressurized soap-liquid; wherein the soap-feeding portion has a joint end; wherein a foam-generating module used to generate a foam and a foam-recycling module used to recycle the extruded unused foam are comprised in the shell-group; thereby it can generate foam and recycle the remaining foam in the soap-releasing portion through a single motor. Accordingly, the present invention greatly saves the structural volume and prevents the soap-liquid from being dropped outside and wasted.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: August 11, 2020
    Inventors: Hsiang-Hung Wang, Yu-Chang Lin