Abstract: A linear actuator includes an actuating mechanism, a telescopic structure and a hand rotary releasing structure. The hand rotary releasing structure includes a connecting seat, a clutch seat, a clutch, an adaptor sleeve and a return spring. A peripheral surface of the connecting seat is disposed with multiple clutch troughs. The clutch seat includes multiple engaging troughs. The clutch is disposed between the connecting seat and the clutch seat. The adaptor sleeve is disposed around the clutch and includes multiple spiral troughs. The return spring is disposed around the connecting seat and abuts against the clutch to reduce the activating time and steps of release.

Abstract: A method includes depositing a multi-layer stack over a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a first recess in the multi-layer stack; forming first spacers on sidewalls of the sacrificial layers in the first recess; depositing a first semiconductor material in the first recess, where the first semiconductor material is undoped, where the first semiconductor material is in physical contact with a sidewall and a bottom surface of at least one of the first spacers; implanting dopants in the first semiconductor material, where after implanting dopants the first semiconductor material has a gradient-doped profile; and forming an epitaxial source/drain region in the first recess over the first semiconductor material, where a material of the epitaxial source/drain region is different from the first semiconductor material.

Abstract: A 3D stack package structure includes a first chip, a second chip, a through-silicon via (TSV), and a multi-layer protective structure. The second chip is bonded to the first chip. The second chip includes an interconnect structure composed of multiple metal layers and a plurality of vias respectively connecting upper and lower layers of the multiple metal layers. The TSV extends through the second chip. The multi-layer protective structure is disposed within the second chip and surrounds the TSV. The multi-layer protective structure includes: multiple protective layers, each having an opening for passage of the TSV; and a plurality of sealing rings, respectively connecting upper and lower layers of the multiple protective layers and surrounding the TSV.

Abstract: A semiconductor device structure and methods of forming the same are described. The method includes forming a fin structure from a substrate, depositing a first semiconductor material on a first semiconductor layer of the fin structure, depositing a second semiconductor material on the first semiconductor material, depositing an interlayer dielectric layer over the second semiconductor material, forming an opening in the interlayer dielectric layer to expose the second semiconductor material, performing a first implantation process to form an amorphous region in the second semiconductor material and to implant a first species in the amorphous region, and performing a second implantation process to implant a second species in the amorphous region. The second species includes fluorine, nitrogen, or carbon. The method further includes performing an annealing process to recrystallize the amorphous region.

Abstract: A method includes depositing a multi-layer stack over a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a first recess in the multi-layer stack; forming first spacers on sidewalls of the sacrificial layers in the first recess; depositing a first semiconductor material in the first recess, where the first semiconductor material is undoped, where the first semiconductor material is in physical contact with a sidewall and a bottom surface of at least one of the first spacers; implanting dopants in the first semiconductor material, where after implanting dopants the first semiconductor material has a gradient-doped profile; and forming an epitaxial source/drain region in the first recess over the first semiconductor material, where a material of the epitaxial source/drain region is different from the first semiconductor material.

Abstract: A an electric deck frame structure (1, 1A) includes: corner lifting vertical posts (10), each having a carrying seat (11) and a retractable rod (12), the carrying seat includes a first connection part (111) having a first electric connection assembly (1133) and a second connection part (116) having a second electric connection assembly (1183); connection pipes (20), connected to the corner lifting vertical posts (10) and having a first opening (21) and a second opening (22); a transformer (30) having an electricity input port (31) arranged corresponding to the first opening (21) and an electricity output port (32) arranged corresponding to the second opening (22), the transformer is hidden in the connection pipe, and a power and signal main cable (40), connected to the electricity output port (32), the first electric connection assembly (1133) and the second electric connection assembly (1183).

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of semiconductor layers vertically stacked over a substrate, wherein the semiconductor layers are vertically spaced apart from each other; forming a source/drain epitaxial structure on sides of the semiconductor layers, wherein the source/drain epitaxial structure is doped with a p-type doping species; implanting fluorine ions into the source/drain epitaxial structure; after implanting fluorine ions into the source/drain epitaxial structure, performing an annealing process to diffuse the p-type doping species into a side region of a topmost one of the semiconductor layers; and forming a source/drain contact over the source/drain epitaxial structure.

Abstract: A cover structure of a control box is disclosed. The control box includes a base with a limiting part, the cover structure includes a cover body, a knob and a torsion spring, the cover body is connected to the base, the knob is rotatably connected to the cover body and has a stop arm stopped at the limiting part, two ends of the torsion spring are fixed to the cover body and the knob respectively to generate a pre-torque. When the knob is rotated by an external force, the stop arm is released from the limiting part to unlock the cover structure from the base, and when the external force is removed, the knob restores to original position by the pre-torque. Therefore, the cover structure may be removed from the base quickly to facilitate an operator's use and maintenance.

Abstract: A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.

Abstract: A semiconductor device structure and methods of forming the same are described. The structure includes a first semiconductor material disposed over a substrate and a dielectric layer disposed on the first semiconductor material. The dielectric layer includes a dopant. The structure further includes a second semiconductor material disposed on the dielectric layer, a first semiconductor layer in contact with the second semiconductor material, and a first dielectric spacer in contact with the first semiconductor layer, wherein the first dielectric spacer includes the dopant.

Abstract: An industrial heavy load electric linear actuator includes a gearbox, an electric motor, a lead screw, an extension pipe and a load baring structure. The electric motor is connected to the gearbox. A portion of the lead screw is received inside the gearbox and driven by the electric motor, and another portion of the lead screw is extended out of the gearbox. The extension pipe is movably fastened to the lead screw. The load bearing structure includes a sleeve, a bearing, a fastening element, a fixation seat, and a rear supporting seat. The sleeve is mounted to the lead screw and holds the bearing jointly with the fastening element. The fixation seat and the rear supporting seat hold the bearing at outer perimeters of the sleeve and the fastening element.

Abstract: A method includes forming first nanostructures over a substrate, then forming second nanostructures over the plurality of first nanostructures. A first source/drain region is epitaxially grown adjacent the first nanostructures, and a second source/drain region is epitaxially grown over the first source/drain region and adjacent the second nanostructures. An implantation process is performed to implant impurities into the second source/drain region, wherein the implantation process forms an amorphous region within the second source/drain region. At least one rapid thermal process is performed on the second source/drain region, wherein performing each rapid thermal process recrystallizes a portion of the amorphous region.

Abstract: A transmission device (1) includes a gearbox (10), a motor set (20) and a braking set (30). The gearbox (10) includes a housing (11) and a transmission set (12) arranged in the housing (11), and the housing (11) includes a socket (111). The motor set (20) includes a motor body (21) and a rotating shaft (22) disposed protrusively from the front side of the motor body (21). The rotating shaft (22) is inserted in the socket (111) and connected to the transmission set (12). The braking set (30) is installed on the rotating shaft (22) and positioned in the socket (111), and the braking set (30) applies braking force on the rotating shaft (22). Therefore, the effect of saving space at the end of the motor is achieved.

Abstract: A method includes depositing a multi-layer stack on a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a dummy gate on the multi-layer stack; forming a first spacer on a sidewall of the dummy gate; performing a first implantation process to form a first doped region, the first implantation process having a first implant energy and a first implant dose; performing a second implantation process to form a second doped region, where the first doped region and the second doped region are in a portion of the channel layers uncovered by the first spacer and the dummy gate, the second implantation process having a second implant energy and a second implant dose, where the second implant energy is greater than the first implant energy, and where the first implant dose is different from the second implant dose.

Abstract: A semiconductor structure including a substrate, a capacitor, and an oxide semiconductor field effect transistor (OSFET). The capacitor is located on the substrate. The oxide semiconductor field effect transistor is located on the substrate. The oxide semiconductor field effect transistor is electrically connected to the capacitor.

Abstract: A linear actuator with a cushion mechanism includes: an actuator body (10) having a motor (13), a lead screw (151), an outer pipe (152) and a retractable pipe (153), the lead screw (151) is driven by the motor (13), the retractable pipe (153) has a screw nut (157); a rapid release mechanism (30) disposed on the lead screw (151) and releasing a driving relation of the motor (13) and the lead screw (151); and a cushion mechanism (50) disposed in the actuator body (10) and having an elastic member (51) and a deceleration structure (53). When the rapid release mechanism (30) is released, the lead screw (151) rotates while the retractable pipe (153) being loaded, the screw nut (157) compresses the elastic member (51) to make the deceleration structure (53) generate a break, thus a rotation speed of the lead screw (151) is lowered.

Abstract: A linear actuator (1) with the protection mechanism includes: a motor case (10) having a case member (11) with a bottom plate (111) on which a through hole (114) is formed; a drive mechanism (20) accommodated in the case member (11); a transmission mechanism (30) having a machine core (31), a bearing (32), a base seat (33) with an extending plate (332) on which a penetrated hole (333) is formed, and a fasten unit (34) with a head part (341), the machine core (31) is connected to the drive mechanism (20), the bearing (32) is disposed on the base seat (33) and sheathes the machine core (31), the fasten unit (34) is fastened with the bottom plate (111); and a protection structure (40) sheathing the fasten unit (34) and disposed between the bottom plate (111) and the head part (341).

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a semiconductor fin extending from a substrate. A dummy gate stack is formed over the semiconductor fin. The dummy gate stack extends along sidewalls and a top surface of the semiconductor fin. The semiconductor fin is patterned to form a recess in the semiconductor fin. A semiconductor material is deposited in the recess. An implantation process is performed on the semiconductor material. The implantation process includes implanting first implants into the semiconductor material and implanting second implants into the semiconductor material. The first implants have a first implantation energy. The second implants have a second implantation energy different from the first implantation energy.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.