Abstract: A method includes depositing a multi-layer stack on a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a dummy gate on the multi-layer stack; forming a first spacer on a sidewall of the dummy gate; performing a first implantation process to form a first doped region, the first implantation process having a first implant energy and a first implant dose; performing a second implantation process to form a second doped region, where the first doped region and the second doped region are in a portion of the channel layers uncovered by the first spacer and the dummy gate, the second implantation process having a second implant energy and a second implant dose, where the second implant energy is greater than the first implant energy, and where the first implant dose is different from the second implant dose.

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm?3 and about 1020 cm?3.

Abstract: The disclosure is a nut structure for an electric pushing rod. The electric pushing rod has a guide screw (A) with an outer thread (A1). The nut structure includes a metal cylinder (10) and a plastic intermediate component (20). The metal cylinder (10) has a pivot hole (11) being passed through by the guide screw (A). An inner wall of the pivot (11) is provided with an inner thread (12). The plastic intermediate component (20) covers the inner thread (12) and is disposed of between the outer thread (A1) and the inner thread (12). The plastic intermediate component (20) includes a fixed side thread (21) mounted on the inner thread (12) and a driving side thread (22) screwed with the outer thread (A1). Therefore, the strength may be enhanced to avoid both the nut structure from being broken and the driving side thread (22) from getting stripped.

Abstract: A leg structure of an electric table includes a pair of support assemblies (10), multiple horizontal rods (20) and a pair of drive assemblies (30). The support assemblies (10) are arranged spacedly and parallelly to each other. Each support assembly (10) includes a connecting rod (11) and a pair of telescopic posts (12). Each telescopic post (12) is connected and fixed to the connecting rod (11). Each horizontal rod (20) is separately connected to each support assembly (10) and is parallel to each other. Each drive assembly (30) is separately received in each support assembly (10) for driving each telescopic post (12) to ascend or descend. Therefore, the leg structure of an electric table may be easily assembled and the whole structure is stable.

Abstract: A lightweight beam structure includes a first and a second frame. The first frame includes an upper plate, two inner side plates downward bent and extended from two sides of the upper plate, two outer side plates upward bent and extended from two inner side plates respectively and two fixing plates bent and extended from two outer side plates respectively. Each outer side plate is formed outside each inner side plate. A groove is formed between each inner side plate and each outer side plate. The second frame is connected with the first frame and includes a top plate and two intermediate plates downward bent and extended from two sides of the top plate. Each intermediate plate is received in each groove. The top plate is formed over the upper plate. Therefore, the stability is maintained and the weight is reduced so that the material costs may be decreased.

Abstract: A pixel structure is provided. The pixel structure includes a substrate and a conductive line electrically connected to the substrate. The ratio of the height to the width of the conductive line is between 0.5 and 6. The pixel structure also includes an electrode electrically connected to the conductive line and a conversion element electrically connected to the conductive lines through the electrode.

Abstract: A lifting table stand includes a pair of telescopic columns, a carrier, an actuation module, and a passive mechanism. Each telescopic column includes multiple tubes adapted to sheathe with each other and move telescopically relative to each other. The carrier includes a beam straddling the telescopic columns and a pair of support members perpendicularly connected to two ends of the beam. The actuation module includes a receiving member detachably installed to the beam and a driver connected to the receiving member. The passive mechanism includes a transmission shaft and a pair of gear sets installed in the tubes. The transmission shaft passes the driver and is connected to each gear set. Since the receiving member is detachably installed to beam, the actuation module may be changed to different types to control the elevation of the lifting table stand.

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: An industrial heavy load electric linear actuator includes a gearbox (10), an electric motor (20), a lead screw (30), an extension pipe (40) and a load baring structure (50). The electric motor (20) is connected to the gearbox (10). A portion of the lead screw (30) is received inside the gearbox (10) and driven by the electric motor (20), and another portion of the lead screw (30) is extended out of the gearbox (10). The extension pipe (40) is movably fastened to the lead screw (30). The load bearing structure (50) includes a sleeve (51), a bearing (52), a fastening element (53), a fixation seat (54) and a rear supporting seat (55). The sleeve (51) is mounted to the lead screw (30) and holds the bearing (52) jointly with the fastening element (53). The fixation seat (54) and the rear supporting seat (55) hold the bearing (52) at outer perimeters of the sleeve (51) and the fastening element (53).

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm?3 and about 1020 cm?3.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: A semiconductor device, and a method of manufacturing, is provided. A dummy gate is formed on a semiconductor substrate. An interlayer dielectric (ILD) is formed over the semiconductor fin. A dopant is implanted into the ILD. The dummy gate is removed and an anneal is performed on the ILD. The implantation and the anneal lead to an enhancement of channel resistance by a reduction in interlayer dielectric thickness and to an enlargement of critical dimensions of a metal gate.

Abstract: An actuator and a transmission structure thereof. The transmission structure (3) includes a screw nut (31) and a ratchet guiding sleeve (32). The screw nut (31) includes one or a plurality of pawls (311). The ratchet guiding sleeve (32) is mounted on the screw nut (31), and the screw nut (31) is able to rotate relative to the ratchet guiding sleeve (32). The ratchet guiding sleeve (32) includes a ring ratchet (321) disposed on an inner circumference thereof and a plurality of track slots (322) disposed on an outer circumference thereof. One or a plurality of pawls (311) abut against the ring ratchet (321), thereby achieving the effect of smooth movements of the actuator (10) and the transmission structure (3).

Abstract: A linear actuator (1) and the centrifugal safety device (50) thereof is disclosed. The safety device (50) includes an outer socket (51) having a stop portion (512) and a first accommodation portion (513), an inner socket (53) having a raised portion (531) and a second accommodation portion (532) and a centrifugal assembly (55) having a centrifugal block (551) and an elastic element (555). The inner socket (53) drives the centrifugal assembly (55) to rotate. If the centrifugal force of the centrifugal block (551) is smaller than the elasticity of the elastic element (555), then the centrifugal block (551) is limited in the second accommodation portion (532) by the elastic element (555), or else the centrifugal block (551) moves into the first accommodation portion (513) and clamped by the raised portion (531) and the stop portion (512).

Abstract: A lifting device with a cable management is provided. The lifting device includes: an outer pipe, an actuation mechanism, a linkage member, a cable, and a cable management component. The actuation mechanism is accommodated in the outer pipe and has a motor and a screw rod. The linkage member is accommodated in the outer pipe and mutually screw-fitted with the screw rod to operate, and moves relative to the outer pipe. The cable has a spiral coiled cable unit. A shaft core line in parallel with the screw rod is defined by the spiral coiled cable unit. The cable management component is disposed in the outer pipe and in parallel to the shaft core line. The spiral coiled cable unit is reeled on the cable management component. Accordingly, the cable may be stably positioned and the cable may be prevented from rubbing or being tangled with the screw rod.

Abstract: A virtual image display system, including a handheld electronic device having a first battery and a virtual image display having a second battery, is provided. The handheld electronic device and the virtual image display are coupled to each other. The handheld electronic device is used to calculate a power supply time of the first battery; calculate an expected discharge time of the second battery under a discharge condition; compare the power supply time and the expected discharge time to generate a comparison result; and adjust a supply current provided by the first battery to the virtual image display according to the comparison result.

Abstract: A lifting table stand includes a pair of telescopic columns, a carrier, an actuation module and a passive mechanism. Each telescopic column includes multiple tubes adapted to sheathe with each other and move telescopically relative to each other. The carrier includes a beam straddling the telescopic columns and a pair of support members perpendicularly connected to two ends of the beam. The actuation module includes a receiving member detachably installed to the beam and a driver connected to the receiving member. The passive mechanism includes a transmission shaft and a pair of gear sets installed in the tubes. The transmission shaft passes the driver and is connected to each gear set. Since the receiving member is detachably installed to beam, the actuation module may be changed to different types to control the elevation of the lifting table stand.

Abstract: An actuator and a transmission structure thereof. The transmission structure (3) includes a screw nut (31) and a ratchet guiding sleeve (32). The screw nut (31) includes one or a plurality of pawls (311). The ratchet guiding sleeve (32) is mounted on the screw nut (31), and the screw nut (31) is able to rotate relative to the ratchet guiding sleeve (32). The ratchet guiding sleeve (32) includes a ring ratchet (321) disposed on an inner circumference thereof and a plurality of track slots (322) disposed on an outer circumference thereof. One or a plurality of pawls (311) abut against the ring ratchet (321), thereby achieving the effect of smooth movements of the actuator (10) and the transmission structure (3).

Abstract: A linear actuator (1) and the centrifugal safety device (50) thereof is disclosed. The safety device (50) includes an outer socket (51) having a stop portion (512) and a first accommodation portion (513), an inner socket (53) having a raised portion (531) and a second accommodation portion (532) and a centrifugal assembly (55) having a centrifugal block (551) and an elastic element (555). The inner socket (53) drives the centrifugal assembly (55) to rotate. If the centrifugal force of the centrifugal block (551) is smaller than the elasticity of the elastic element (555), then the centrifugal block (551) is limited in the second accommodation portion (532) by the elastic element (555), or else the centrifugal block (551) moves into the first accommodation portion (513) and clamped by the raised portion (531) and the stop portion (512).

Abstract: A method includes depositing a multi-layer stack over a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a first recess in the multi-layer stack; forming first spacers on sidewalls of the sacrificial layers in the first recess; depositing a first semiconductor material in the first recess, where the first semiconductor material is undoped, where the first semiconductor material is in physical contact with a sidewall and a bottom surface of at least one of the first spacers; implanting dopants in the first semiconductor material, where after implanting dopants the first semiconductor material has a gradient-doped profile; and forming an epitaxial source/drain region in the first recess over the first semiconductor material, where a material of the epitaxial source/drain region is different from the first semiconductor material.