Patents by Inventor Yu-Chen Shen
Yu-Chen Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11942507Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 ?m to 100 ?m and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 ?m to 10 ?m.Type: GrantFiled: March 5, 2021Date of Patent: March 26, 2024Assignee: Lumileds LLCInventors: Erik William Young, Dennis Scott, Rajat Sharma, Toni Lopez, Yu-Chen Shen
-
Patent number: 11923482Abstract: A light emitting device and method of forming a light emitting device are disclosed. The light emitting device includes a light emitting diode and a phosphor layer formed on the light emitting diode, the phosphor layer including a plurality of phosphor particles formed in a particle layer, the particle layer including interstices between the phosphor particles, and a matrix material disposed in a portion of the interstices. A plurality of cavities may be disposed in a remaining portion of the interstices.Type: GrantFiled: September 29, 2020Date of Patent: March 5, 2024Assignee: Lumileds LLCInventors: Joerg Feldmann, Marcel Rene Bohmer, Marinus Johannes Petrus Maria van Gerwen, Yu-Chen Shen
-
Patent number: 11916471Abstract: An example electronic device includes a controller to determine a user touch detection by a power adaptor coupled to the electronic device to operate the electronic device in an AC power mode. The power adaptor may comprise a proximity sensor to detect a user touch for detachment of the power adaptor from the electronic device, and a control circuit to operate a configuration pin in a low output mode to signal user touch detection. The controller may initiate central processing unit (CPU) throttling to reduce power consumption by the electronic device. The controller may further stop CPU throttling in response to detecting that the power adaptor has been detached from the electronic device. Further, the controller may switch the electronic device to a DC power mode to operate using DC power supplied by a battery of the electronic device in response to power adaptor detachment.Type: GrantFiled: October 18, 2019Date of Patent: February 27, 2024Assignee: Hewlett-Packard Development Company, L.P.Inventors: Ting-Yang Tsai, Yi-Chen Chen, Ching-Lung Wang, Yu-Min Shen
-
Patent number: 11817532Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.Type: GrantFiled: March 31, 2022Date of Patent: November 14, 2023Assignee: Lumileds LLCInventors: Yu-Chen Shen, Luke Gordon, Amil Ashok Patel
-
Patent number: 11784286Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: GrantFiled: December 7, 2022Date of Patent: October 10, 2023Assignee: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
-
Patent number: 11749790Abstract: A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate.Type: GrantFiled: December 19, 2018Date of Patent: September 5, 2023Assignee: Lumileds LLCInventors: Ashish Tandon, Luke Gordon, Yu-Chen Shen
-
Publication number: 20230197877Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: ApplicationFiled: February 9, 2023Publication date: June 22, 2023Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
-
Publication number: 20230170452Abstract: A light-emitting diode (LED) die can include a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material. The LED die can include vias that can electrically power the p-n junction. The vias can optionally be electrically connected in parallel to one another. A controller can supply current to the vias to electrically power the LED die. The vias can be distributed with a density that peaks at or near a center of the LED die and decreases with increasing distances away from the peak of the density, such that when the vias are electrically powered, the LED die emits light with a surface luminance that peaks at or near the center of the LED die and decreases with increasing distances away from the peak of the surface luminance.Type: ApplicationFiled: November 17, 2022Publication date: June 1, 2023Inventors: Yu-Chen Shen, Jeffrey Vincent DiMaria, Florent Gregoire Monestier, Antonio Lopez Julia
-
Publication number: 20230154970Abstract: A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.Type: ApplicationFiled: January 19, 2023Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Ashish Tandon, Rajat Sharma, Joseph Flemish, Andrei Papou, Wen Yu, Erik William Young, Yu-Chen Shen, Luke Gordon
-
Patent number: 11652134Abstract: A first component with a first sidewall and a second component with a second sidewall may be mounted onto an expandable film such that an original distance X is the distance between the first sidewall and the second sidewall. The expandable film may be expanded such that an expanded distance Y is the distance between the first sidewall and the second sidewall and expanded distance Y is greater than original distance X. A first sidewall material may be applied within at least a part of a space between the first sidewall and the second sidewall. The expandable film may be expanded such that a contracted distance Z is the distance between the first sidewall and the second sidewall, and contracted distance Z is less than expanded distance Y.Type: GrantFiled: June 3, 2022Date of Patent: May 16, 2023Assignee: Lumileds LLCInventors: Tze Yang Hin, Yu-Chen Shen, Luke Gordon, Danielle Russell Chamberlin, Daniel Bernardo Roitman
-
Publication number: 20230104020Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: ApplicationFiled: December 7, 2022Publication date: April 6, 2023Applicant: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
-
Patent number: 11605750Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: GrantFiled: February 23, 2021Date of Patent: March 14, 2023Assignee: SunPower CorporationInventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
-
Patent number: 11569415Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: GrantFiled: March 5, 2021Date of Patent: January 31, 2023Assignee: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
-
Publication number: 20220359799Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Applicant: Lumileds LLCInventors: Kentaro SHIMIZU, Hisashi MASUI, Yu-Chen SHEN, Danielle Russell CHAMBERLIN, Peter Josef SCHMIDT
-
Publication number: 20220293801Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: May 31, 2022Publication date: September 15, 2022Inventors: Yu-Chen Shen, Perine Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
-
Publication number: 20220293675Abstract: A first component with a first sidewall and a second component with a second sidewall may be mounted onto an expandable film such that an original distance X is the distance between the first sidewall and the second sidewall. The expandable film may be expanded such that an expanded distance Y is the distance between the first sidewall and the second sidewall and expanded distance Y is greater than original distance X. A first sidewall material may be applied within at least a part of a space between the first sidewall and the second sidewall. The expandable film may be expanded such that a contracted distance Z is the distance between the first sidewall and the second sidewall, and contracted distance Z is less than expanded distance Y.Type: ApplicationFiled: June 3, 2022Publication date: September 15, 2022Applicant: LUMILEDS LLCInventors: Tze Yang HIN, Yu-Chen SHEN, Luke GORDON, Danielle Russell CHAMBERLIN, Daniel Bernardo ROITMAN
-
Publication number: 20220285425Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 ?m to 100 ?m and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 ?m to 10 ?m.Type: ApplicationFiled: March 5, 2021Publication date: September 8, 2022Applicant: Lumileds LLCInventors: Erik William Young, Dennis Scott, Rajat Sharma, Toni Lopez, Yu-Chen Shen
-
Patent number: 11411147Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.Type: GrantFiled: June 30, 2020Date of Patent: August 9, 2022Assignee: Lumileds LLCInventors: Kentaro Shimizu, Hisashi Masui, Yu-Chen Shen, Danielle Russell Chamberlin, Peter Josef Schmidt
-
Publication number: 20220223766Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.Type: ApplicationFiled: March 31, 2022Publication date: July 14, 2022Applicant: LUMILEDS LLCInventors: Yu-Chen SHEN, Luke GORDON, Amil Ashok PATEL
-
Patent number: 11374145Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: GrantFiled: December 5, 2019Date of Patent: June 28, 2022Assignees: SunPower Corporation, Total Marketing ServicesInventors: Yu-Chen Shen, PĂ©rine Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim