Patents by Inventor Yu-Chen Shen
Yu-Chen Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11569415Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: GrantFiled: March 5, 2021Date of Patent: January 31, 2023Assignee: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
-
Patent number: 11508877Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.Type: GrantFiled: March 23, 2020Date of Patent: November 22, 2022Assignee: Genesis Photonics Inc.Inventors: Tung-Lin Chuang, Yi-Ru Huang, Yu-Chen Kuo, Chih-Ming Shen, Tsung-Syun Huang, Jing-En Huang
-
Publication number: 20220359799Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Applicant: Lumileds LLCInventors: Kentaro SHIMIZU, Hisashi MASUI, Yu-Chen SHEN, Danielle Russell CHAMBERLIN, Peter Josef SCHMIDT
-
Publication number: 20220293675Abstract: A first component with a first sidewall and a second component with a second sidewall may be mounted onto an expandable film such that an original distance X is the distance between the first sidewall and the second sidewall. The expandable film may be expanded such that an expanded distance Y is the distance between the first sidewall and the second sidewall and expanded distance Y is greater than original distance X. A first sidewall material may be applied within at least a part of a space between the first sidewall and the second sidewall. The expandable film may be expanded such that a contracted distance Z is the distance between the first sidewall and the second sidewall, and contracted distance Z is less than expanded distance Y.Type: ApplicationFiled: June 3, 2022Publication date: September 15, 2022Applicant: LUMILEDS LLCInventors: Tze Yang HIN, Yu-Chen SHEN, Luke GORDON, Danielle Russell CHAMBERLIN, Daniel Bernardo ROITMAN
-
Publication number: 20220293801Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: May 31, 2022Publication date: September 15, 2022Inventors: Yu-Chen Shen, Perine Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
-
Publication number: 20220285425Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 ?m to 100 ?m and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 ?m to 10 ?m.Type: ApplicationFiled: March 5, 2021Publication date: September 8, 2022Applicant: Lumileds LLCInventors: Erik William Young, Dennis Scott, Rajat Sharma, Toni Lopez, Yu-Chen Shen
-
Publication number: 20220286038Abstract: An example electronic device includes a controller to determine a user touch detection by a power adaptor coupled to the electronic device to operate the electronic device in an AC power mode. The power adaptor may comprise a proximity sensor to detect a user touch for detachment of the power adaptor from the electronic device, and a control circuit to operate a configuration pin in a low output mode to signal user touch detection. The controller may initiate central processing unit (CPU) throttling to reduce power consumption by the electronic device. The controller may further stop CPU throttling in response to detecting that the power adaptor has been detached from the electronic device. Further, the controller may switch the electronic device to a DC power mode to operate using DC power supplied by a battery of the electronic device in response to power adaptor detachment.Type: ApplicationFiled: October 18, 2019Publication date: September 8, 2022Applicant: Hewlett-Packard Development Company, L.P.Inventors: Ting-Yang Tsai, Yi-Chen Chen, Ching-Lung Wang, Yu-Min Shen
-
Patent number: 11411147Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.Type: GrantFiled: June 30, 2020Date of Patent: August 9, 2022Assignee: Lumileds LLCInventors: Kentaro Shimizu, Hisashi Masui, Yu-Chen Shen, Danielle Russell Chamberlin, Peter Josef Schmidt
-
Patent number: 11393955Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.Type: GrantFiled: December 6, 2019Date of Patent: July 19, 2022Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Kai-Shun Kang, Tung-Lin Chuang, Yu-Chen Kuo, Yan-Ting Lan, Chih-Ming Shen, Jing-En Huang
-
Publication number: 20220223766Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.Type: ApplicationFiled: March 31, 2022Publication date: July 14, 2022Applicant: LUMILEDS LLCInventors: Yu-Chen SHEN, Luke GORDON, Amil Ashok PATEL
-
Publication number: 20220204936Abstract: A non-fibrous film of which the composition includes a collagen and a polyester polymer is provided. A content of the polyester polymer in the non-fibrous film is 1-60 wt %. Moreover, the non-fibrous film has a swelling rate of 1-200 ?m/hour or a swelling proportion per unit time of 0.1-2%/hour in an aqueous liquid.Type: ApplicationFiled: September 15, 2021Publication date: June 30, 2022Applicant: Industrial Technology Research InstituteInventors: Yu-Bing LIOU, Chih-Ching LIAO, Hsin-Yi HSU, Ying-Wen SHEN, Yun-Chung TENG, Hsin-Hsin SHEN, Yi-Chen CHEN
-
Patent number: 11374145Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: GrantFiled: December 5, 2019Date of Patent: June 28, 2022Assignees: SunPower Corporation, Total Marketing ServicesInventors: Yu-Chen Shen, Périne Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
-
Patent number: 11355548Abstract: A first component with a first sidewall and a second component with a second sidewall may be mounted onto an expandable film such that an original distance X is the distance between the first sidewall and the second sidewall. The expandable film may be expanded such that an expanded distance Y is the distance between the first sidewall and the second sidewall and expanded distance Y is greater than original distance X. A first sidewall material may be applied within at least a part of a space between the first sidewall and the second sidewall. The expandable film may be expanded such that a contracted distance Z is the distance between the first sidewall and the second sidewall, and contracted distance Z is less than expanded distance Y.Type: GrantFiled: December 19, 2018Date of Patent: June 7, 2022Assignee: Lumileds LLCInventors: Tze Yang Hin, Yu-Chen Shen, Luke Gordon, Danielle Russell Chamberlin, Daniel Bernardo Roitman
-
Patent number: 11296262Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.Type: GrantFiled: December 19, 2018Date of Patent: April 5, 2022Assignee: Lumileds LLCInventors: Yu-Chen Shen, Luke Gordon, Amil Ashok Patel
-
Publication number: 20220102593Abstract: A light emitting device and method of forming a light emitting device are disclosed. The light emitting device includes a light emitting diode and a phosphor layer formed on the light emitting diode, the phosphor layer including a plurality of phosphor particles formed in a particle layer, the particle layer including interstices between the phosphor particles, and a matrix material disposed in a portion of the interstices. A plurality of cavities may be disposed in a remaining portion of the interstices.Type: ApplicationFiled: September 29, 2020Publication date: March 31, 2022Applicant: LUMILEDS LLCInventors: Joerg FELDMANN, Marcel Rene BOHMER, Marcel van-Gerwen, Yu-Chen SHEN
-
Publication number: 20210288214Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: ApplicationFiled: March 5, 2021Publication date: September 16, 2021Applicant: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
-
Patent number: 11092311Abstract: A light emitting device may comprise a cup having a wall extending from a first area of the cup to a second area of the cup. The wall is formed from or coated with a reflective material. The light emitting device may comprise a light extraction bridge extending beyond an outer diameter of at least a portion of the wall for directing light into the air. The light may be produced by an LED die mounted at the second area of the cup such that at least some of a light emitted from the LED die exits the cup, having been reflected from the wall and the light extraction bridge.Type: GrantFiled: March 11, 2020Date of Patent: August 17, 2021Assignee: Lumileds LLCInventors: Yu-Chen Shen, Oleg B. Shchekin
-
Publication number: 20210249551Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: ApplicationFiled: February 23, 2021Publication date: August 12, 2021Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
-
Patent number: 10957809Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: GrantFiled: November 22, 2019Date of Patent: March 23, 2021Assignee: SunPower CorporationInventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
-
Patent number: 10854794Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.Type: GrantFiled: December 19, 2018Date of Patent: December 1, 2020Assignee: Lumileds LLCInventors: Kentaro Shimizu, Hisashi Masui, Yu-Chen Shen, Danielle Russell Chamberlin, Peter Josef Schmidt