Patents by Inventor Yu-Chen Shen
Yu-Chen Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11355548Abstract: A first component with a first sidewall and a second component with a second sidewall may be mounted onto an expandable film such that an original distance X is the distance between the first sidewall and the second sidewall. The expandable film may be expanded such that an expanded distance Y is the distance between the first sidewall and the second sidewall and expanded distance Y is greater than original distance X. A first sidewall material may be applied within at least a part of a space between the first sidewall and the second sidewall. The expandable film may be expanded such that a contracted distance Z is the distance between the first sidewall and the second sidewall, and contracted distance Z is less than expanded distance Y.Type: GrantFiled: December 19, 2018Date of Patent: June 7, 2022Assignee: Lumileds LLCInventors: Tze Yang Hin, Yu-Chen Shen, Luke Gordon, Danielle Russell Chamberlin, Daniel Bernardo Roitman
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Patent number: 11296262Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.Type: GrantFiled: December 19, 2018Date of Patent: April 5, 2022Assignee: Lumileds LLCInventors: Yu-Chen Shen, Luke Gordon, Amil Ashok Patel
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Publication number: 20220102593Abstract: A light emitting device and method of forming a light emitting device are disclosed. The light emitting device includes a light emitting diode and a phosphor layer formed on the light emitting diode, the phosphor layer including a plurality of phosphor particles formed in a particle layer, the particle layer including interstices between the phosphor particles, and a matrix material disposed in a portion of the interstices. A plurality of cavities may be disposed in a remaining portion of the interstices.Type: ApplicationFiled: September 29, 2020Publication date: March 31, 2022Applicant: LUMILEDS LLCInventors: Joerg FELDMANN, Marcel Rene BOHMER, Marcel van-Gerwen, Yu-Chen SHEN
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Publication number: 20210288214Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: ApplicationFiled: March 5, 2021Publication date: September 16, 2021Applicant: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
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Patent number: 11092311Abstract: A light emitting device may comprise a cup having a wall extending from a first area of the cup to a second area of the cup. The wall is formed from or coated with a reflective material. The light emitting device may comprise a light extraction bridge extending beyond an outer diameter of at least a portion of the wall for directing light into the air. The light may be produced by an LED die mounted at the second area of the cup such that at least some of a light emitted from the LED die exits the cup, having been reflected from the wall and the light extraction bridge.Type: GrantFiled: March 11, 2020Date of Patent: August 17, 2021Assignee: Lumileds LLCInventors: Yu-Chen Shen, Oleg B. Shchekin
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Publication number: 20210249551Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: ApplicationFiled: February 23, 2021Publication date: August 12, 2021Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Patent number: 10957809Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: GrantFiled: November 22, 2019Date of Patent: March 23, 2021Assignee: SunPower CorporationInventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Patent number: 10854794Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.Type: GrantFiled: December 19, 2018Date of Patent: December 1, 2020Assignee: Lumileds LLCInventors: Kentaro Shimizu, Hisashi Masui, Yu-Chen Shen, Danielle Russell Chamberlin, Peter Josef Schmidt
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Publication number: 20200335672Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.Type: ApplicationFiled: June 30, 2020Publication date: October 22, 2020Applicant: LUMILEDS LLCInventors: Kentaro SHIMIZU, Hisashi MASUI, Yu-Chen SHEN, Danielle Russell CHAMBERLIN, Peter Josef SCHMIDT
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Patent number: 10804843Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.Type: GrantFiled: March 11, 2019Date of Patent: October 13, 2020Assignee: SunPower CorporationInventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
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Publication number: 20200292149Abstract: A light emitting device may comprise a cup having a wall extending from a first area of the cup to a second area of the cup. The wall is formed from or coated with a reflective material. The light emitting device may comprise a light extraction bridge extending beyond an outer diameter of at least a portion of the wall for directing light into the air. The light may be produced by an LED die mounted at the second area of the cup such that at least some of a light emitted from the LED die exits the cup, having been reflected from the wall and the light extraction bridge.Type: ApplicationFiled: March 11, 2020Publication date: September 17, 2020Inventors: Yu-Chen Shen, Oleg B. Shchekin
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Publication number: 20200111924Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: December 5, 2019Publication date: April 9, 2020Inventors: Yu-Chen Shen, PĂ©rine Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Publication number: 20200091366Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: ApplicationFiled: November 22, 2019Publication date: March 19, 2020Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Patent number: 10490685Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: GrantFiled: December 21, 2018Date of Patent: November 26, 2019Assignee: SunPower CorporationInventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Publication number: 20190273467Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.Type: ApplicationFiled: March 11, 2019Publication date: September 5, 2019Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
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Publication number: 20190198564Abstract: A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.Type: ApplicationFiled: December 19, 2018Publication date: June 27, 2019Applicant: Lumileds LLCInventors: Ashish TANDON, Rajat SHARMA, Joseph Robert FLEMISH, Andrei PAPOU, Wen YU, Erik YOUNG, Yu-Chen SHEN, Luke GORDON
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Publication number: 20190198727Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.Type: ApplicationFiled: December 19, 2018Publication date: June 27, 2019Applicant: Lumileds LLCInventors: Yu-Chen SHEN, Luke GORDON, Amil Ashok PATEL
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Publication number: 20190189865Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.Type: ApplicationFiled: December 19, 2018Publication date: June 20, 2019Applicant: Lumileds LLCInventors: Kentaro SHIMIZU, Hisashi MASUI, Yu-Chen SHEN, Danielle Russell CHAMBERLIN, Peter Josef SCHMIDT
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Publication number: 20190189682Abstract: A light emitting diode (LED) array may include an epitaxial layer comprising a first pixel and a second pixel separated by an isolation region. A reflective layer may be formed on the epitaxial layer. A p-type contact layer may be formed on the reflective layer. The isolation region may have a width that is at least a width of a trench formed in a p-type contact layer.Type: ApplicationFiled: December 19, 2018Publication date: June 20, 2019Applicant: Lumileds LLCInventors: Erik YOUNG, Joseph Robert FLEMISH, Ashish TANDON, Rajat SHARMA, Andrei PAPOU, Wen YU, Yu-Chen SHEN, Luke GORDON
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Publication number: 20190189683Abstract: A first component with a first sidewall and a second component with a second sidewall may be mounted onto an expandable film such that an original distance X is the distance between the first sidewall and the second sidewall. The expandable film may be expanded such that an expanded distance Y is the distance between the first sidewall and the second sidewall and expanded distance Y is greater than original distance X. A first sidewall material may be applied within at least a part of a space between the first sidewall and the second sidewall. The expandable film may be expanded such that a contracted distance Z is the distance between the first sidewall and the second sidewall, and contracted distance Z is less than expanded distance Y.Type: ApplicationFiled: December 19, 2018Publication date: June 20, 2019Applicant: Lumileds LLCInventors: Tze Yang HIN, Yu-Chen SHEN, Luke GORDON, Danielle Russell CHAMBERLIN, Daniel Bernardo ROITMAN