Abstract: An anti-human T-cell immunoglobulin domain and mucin domain 3 (TIM-3) antibody, can bind the peptides, comprising the amino-acid sequence RKGDVSL (SEQ ID NO: 9) and/or EKFNLKL (SEQ ID NO: 10) of human TIM-3 protein. The antibody can regulate immune cell activity. The antibody or binding fragment thereof is useful in diagnosis, prognosis, and treatment of cancers that have been reported to express cell-surface TIM-3 such as lung, liver, esophageal cancer and solid tumors.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract: A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.

Abstract: An anti-human T-cell immunoglobulin domain and mucin domain 3 (TIM-3) antibody, can bind the peptides, comprising the amino-acid sequence RKGDVSL (SEQ ID NO: 9) and/or EKFNLKL (SEQ ID NO: 10) of human TIM-3 protein. The antibody can regulate immune cell activity. The antibody or binding fragment thereof is useful in diagnosis, prognosis, and treatment of cancers that have been reported to express cell-surface TIM-3 such as lung, liver, esophageal cancer and solid tumors.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract: A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting device comprises a transparent substrate and a light-emitting stack formed on a surface of the transparent substrate, wherein the transparent substrate has a substrate thickness satisfying a light-extraction efficiency of the light-emitting device decreased by no more than 0.1% if the substrate thickness is decreased by 30 ?m.

Abstract: A light-emitting diode structure comprises a first epitaxial unit; a second epitaxial unit separated from the first epitaxial unit; a crossover metal layer comprising a first protruding portion entering the first epitaxial unit; a conductive layer separated from the crossover metal layer and comprising a second protruding portion entering the second epitaxial unit; a conductive connecting layer surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protru