Patents by Inventor Yu-Chen Yang
Yu-Chen Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180108807Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.Type: ApplicationFiled: December 19, 2017Publication date: April 19, 2018Inventors: Chao-Hsing CHEN, Yu-Chen YANG, Li-Ping JOU, Hui-Chun YEH, Yi-Wen KU
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Patent number: 9905733Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.Type: GrantFiled: March 30, 2017Date of Patent: February 27, 2018Assignee: EPISTAR CORPORATIONInventors: Hong-Che Chen, Chien-Fu Shen, Chao-Hsing Chen, Yu-Chen Yang, Jia-Kuen Wang, Chih-Nan Lin
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Publication number: 20180033824Abstract: A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.Type: ApplicationFiled: October 6, 2017Publication date: February 1, 2018Inventors: Li-Ping JOU, Yu-Chen YANG, Jui-Hung YEH
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Patent number: 9876138Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.Type: GrantFiled: September 22, 2016Date of Patent: January 23, 2018Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
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Patent number: 9825090Abstract: A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.Type: GrantFiled: January 9, 2017Date of Patent: November 21, 2017Assignee: EPISTAR CORPORATIONInventors: Li-Ping Jou, Yu-Chen Yang, Jui-Hung Yeh
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Publication number: 20170207368Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.Type: ApplicationFiled: March 30, 2017Publication date: July 20, 2017Inventors: Hong-Che CHEN, Chien-Fu SHEN, Chao-Hsing CHEN, Yu-Chen YANG, Jia-Kuen WANG, Chih-Nan LIN
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Publication number: 20170117321Abstract: A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.Type: ApplicationFiled: January 9, 2017Publication date: April 27, 2017Inventors: Li-Ping JOU, Yu-Chen YANG, Jui-Hung YEH
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Patent number: 9620679Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.Type: GrantFiled: March 11, 2016Date of Patent: April 11, 2017Assignee: EPISTAR CORPORATIONInventors: Hong-Che Chen, Chien-Fu Shen, Chao-Hsing Chen, Yu-Chen Yang, Jia-Kuen Wang, Chih-Nan Lin
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Publication number: 20170069791Abstract: A light-emitting device comprises a transparent substrate and a light-emitting stack formed on a surface of the transparent substrate, wherein the transparent substrate has a substrate thickness satisfying a light-extraction efficiency of the light-emitting device decreased by no more than 0.1% if the substrate thickness is decreased by 30 ?m.Type: ApplicationFiled: September 8, 2015Publication date: March 9, 2017Inventor: Yu-Chen YANG
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Patent number: 9553127Abstract: A light-emitting diode structure comprises a first epitaxial unit; a second epitaxial unit separated from the first epitaxial unit; a crossover metal layer comprising a first protruding portion entering the first epitaxial unit; a conductive layer separated from the crossover metal layer and comprising a second protruding portion entering the second epitaxial unit; a conductive connecting layer surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.Type: GrantFiled: November 30, 2015Date of Patent: January 24, 2017Assignee: Epistar CorporationInventors: Li-Ping Jou, Yu-Chen Yang, Jui-Hung Yeh
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Publication number: 20170012167Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.Type: ApplicationFiled: September 22, 2016Publication date: January 12, 2017Inventors: Chao-Hsing CHEN, Yu-Chen YANG, Li-Ping JOU, Hui-Chun YEH, Yi-Wen KU
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Patent number: 9472725Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruType: GrantFiled: May 6, 2015Date of Patent: October 18, 2016Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
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Publication number: 20160197237Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Inventors: Hong-Che CHEN, Chien-Fu SHEN, Chao-Hsing CHEN, Yu-Chen YANG, Jia-Kuen WANG, Chih-Nan LIN
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Publication number: 20160104744Abstract: An LED array having N light-emitting diode units (N?3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.Type: ApplicationFiled: November 30, 2015Publication date: April 14, 2016Inventors: Li-Ping JOU, Yu-Chen YANG, Jui-Hung YEH
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Patent number: 9299893Abstract: A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.Type: GrantFiled: January 8, 2014Date of Patent: March 29, 2016Assignee: EPISTAR CORPORATIONInventors: Hong-Che Chen, Chien-Fu Shen, Chao-Hsing Chen, Yu-Chen Yang, Jia-Kuen Wang, Chih-Nan Lin
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Patent number: 9202981Abstract: An LED array having N light-emitting diode units (N?3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.Type: GrantFiled: July 14, 2014Date of Patent: December 1, 2015Assignee: EPISTAR CORPORATIONInventors: Li-Ping Jou, Yu-Chen Yang, Jui-Hung Yeh
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Patent number: 9159881Abstract: Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.Type: GrantFiled: August 28, 2012Date of Patent: October 13, 2015Assignee: EPISTAR CORPORATIONInventors: Jia-Kuen Wang, Chien-Fu Shen, Chao-Hsing Chen, Yu-Chen Yang, Hui-Chun Yeh, Yi-Wen Ku, Hung-Che Chen, Chih-Nan Lin
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Publication number: 20150236208Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruType: ApplicationFiled: May 6, 2015Publication date: August 20, 2015Inventors: Chao-Hsing CHEN, Yu-Chen YANG, Li-Ping JOU, Hui-Chun YEH, Yi-Wen KU
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Patent number: 9048379Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.Type: GrantFiled: December 2, 2013Date of Patent: June 2, 2015Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
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Publication number: 20150123152Abstract: A light-emitting element includes a light-emitting stacked layer including an upper surface, wherein the upper surface includes a first flat region; a protective layer including a current blocking region on the first flat region; and a cap region on the upper surface, wherein the current blocking region is spatially separate from the cap region; and a first electrode covering the current blocking region.Type: ApplicationFiled: November 5, 2014Publication date: May 7, 2015Inventors: CHI-NAN LIN, CHIEN-FU SHEN, YU-CHEN YANG, Ching-Tung Tseng, Cheng-Hsiang Ho, Chun-Wei Chang, Chen Ou