Abstract: The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the driver swings the shield members away from each other into an open state. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

Abstract: The present invention discloses a display including a display panel and a light redirecting film disposed on the viewing side of the display panel. The light redirecting film comprises a light redistribution layer, and a light guide layer disposed on the light redistribution layer. The light redistribution layer includes a plurality of strip-shaped micro prisms extending along a first direction and arranged at intervals and a plurality of diffraction gratings arranged at the bottom of the intervals between the adjacent strip-shaped micro prisms, wherein each of the strip-shaped micro prisms has at least one inclined light-guide surface, and the bottom of each interval has at least one set of diffraction gratings, and the light guide layer is in contact with the strip-shaped micro prisms and the diffraction gratings.

Abstract: A battery module and a short protection method thereof are provided. The battery module has a battery cell pack and a control circuit. The method includes: detecting a temperature of the battery cell pack as a battery cell temperature through the control circuit; determining whether the battery cell temperature shows a downward trend when the battery cell temperature is higher than a first predetermined temperature value; and deactivating the battery module when the battery cell temperature does not show the downward trend.

Abstract: A data writing method, a memory storage device, and a memory control circuit unit are provided. The method includes: receiving a write command from a host system, and the write command including first data; checking a status of a first physical programming unit in a first physical erasing unit; in response to the status of the first physical programming unit being a first status, sending a first command sequence to a rewritable non-volatile memory module, and the first command sequence being configured to instruct the rewritable non-volatile memory module to store at least part of the first data to the first physical programming unit.

Abstract: A wafer container includes a frame, a door and at least a pair of shelves. The frame has opposite sidewalls. The pair of the shelves are respectively disposed and aligned on the opposite sidewalls of the frame. Various methods and devices are provided for holding at least one wafer to the shelves during transport.

Abstract: The invention provides a deposition equipment with a shielding mechanism, which includes a reaction chamber, a carrier, a cover ring and a shielding mechanism. The shielding mechanism includes a first bearing arm, a second bearing arm, a first shielding plate and a second shielding plate. The first and second shielding plates are respectively placed on the first and second bearing arms. There are corresponding alignment units between the lower surface of the first and second shielding plates and the upper surface the carrier, so that the first and second shielding plates can be aligned with the carrier. There is also a corresponding alignment unit between the upper surface of the first and second shielding plates and the lower surface the cover ring, so that the cover ring can be aligned with the first and second shielding plates to define a cleaning space in the reaction chamber.

Abstract: A portable computing device including a central processing unit (CPU) and a controller is provided. The controller is coupled between the CPU, a graphics processing unit, and a battery module. The controller determines whether to adjust performance of the CPU and the graphics processing unit according to at least one of a battery capacity, a battery power, a battery current, a battery voltage, or a battery temperature of the battery module.

Abstract: The present disclosure provides a power allocating system, including adapters and an electronic device. Each of the adapters includes a processor. The electronic device includes a controller. The controller obtains rated information and current output information from each of the processors to calculate an output utilization rate of each of the adapters. The controller transmits at least one adjusting signal to at least one of the processors according to the output utilization rates to adjust the output utilization rate of the adapters.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.

Abstract: A battery device and a battery protection method for same are provided. It is determined, according to electrical capacity of a battery, whether a battery device communicates with an electronic device, and whether the battery is being charged or discharged, whether to control the battery device to enter a shutdown mode.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.

Abstract: The present disclosure describes a semiconductor device and methods for forming the same. The semiconductor device includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The semiconductor device also includes a gate structure that includes first and second portions. The first portion is formed between each nanostructure of nanostructures. The second portion is formed under the bottom-most nanostructure of the plurality of nanostructures and extends under a top surface of the substrate.

Abstract: An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.

Abstract: A portable computing device including a central processing unit (CPU) and a controller is provided. The controller is coupled between the CPU, a graphics processing unit, and a battery module. The controller determines whether to adjust performance of the CPU and the graphics processing unit according to at least one of a battery capacity, a battery power, a battery current, a battery voltage, or a battery temperature of the battery module.

Abstract: A method of fabricating a trimmed fin includes: forming a preliminary fin including silicon and germanium protruding from a substrate, in which the preliminary fin has a first germanium concentration at a top surface of the preliminary fin and a second germanium concentration at a position beneath the top surface of the preliminary fin, and the first germanium concentration is less than the second germanium concentration; oxidizing an exposed surface of the preliminary fin to form a trimmed fin covered by an oxide layer; and removing the oxide layer to obtain the trimmed fin.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.

Abstract: The present disclosure provides a power allocating system, including adapters and an electronic device. Each of the adapters includes a processor. The electronic device includes a controller. The controller obtains rated information and current output information from each of the processors to calculate an output utilization rate of each of the adapters. The controller transmits at least one adjusting signal to at least one of the processors according to the output utilization rates to adjust the output utilization rate of the adapters.

Abstract: A multiport connector and a power control method are provided. The multiport connector comprises a power output port and multiple power input ports. The power output port is connected to an electronic device. The power input ports are connected to multiple power adapters to form multiple power transmission paths. Each power transmission path comprises a power line, a detecting circuit and an impedance component connected to the detecting circuit in series. Therefore, when the electronic device is connected to the multiport connector, the electronic device detects the equivalent impedance formed by the impedance components on the detecting circuits to adjust an upper limit of load power.