Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Abstract: A method for manufacturing a semiconductor structure includes disposing a wafer in a processing chamber, in which the wafer is laterally surrounded by a focus ring. A plasma is formed in the processing chamber to process the wafer. A thickness of the focus ring is detected. A plasma direction of the plasma over a peripheral region of the wafer is adjusted according to the thickness of the focus ring.

Abstract: A method for manufacturing a semiconductor structure includes disposing a wafer in a processing chamber, in which the wafer is laterally surrounded by a focus ring. A plasma is formed in the processing chamber to process the wafer. A thickness of the focus ring is detected. A plasma direction of the plasma over a peripheral region of the wafer is adjusted according to the thickness of the focus ring.

Abstract: A semiconductor manufacturing apparatus for performing a process is disclosed. An apparatus includes a chamber configured to receive a wafer for an etching process; a conductive focus ring disposed within the chamber and configured to focus an electric field to control an etch direction of the etching process; and an insulative cover ring disposed within the chamber, wherein the insulative cover ring is configured to modify the electric field, wherein the insulative cover ring has an inner annular insulative portion and outer annular insulative portion, and wherein a gap is defined between the inner annular insulative portion and the outer annular insulative portion.

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

Abstract: A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

Abstract: A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.

Abstract: A command script editing method, a command script editor and a graphic user interface are provided. The command script editing method includes the following steps. The command node is edited according to at least one inputting action or at least one image identifying action performed on the operation frame when the command script editor is at an image editing mode. The command node is edited according to a setting content of at least one process action when the command script editor is at a process editing mode.

Abstract: A script creation method for robot process automation and an electronic device using the same are provided. The electronic device includes an area defining unit, a recording unit, an analysis unit and a creation unit. The area defining unit is configured to obtain a recording area of a screen. The recording unit is configured to record a video according to the recording area. The analysis unit is configured to analyze a plurality of actions according to the video. The creation unit is configured to build a plurality of steps of a script according to the actions.

Abstract: A semiconductor device and a method of fabricating a semiconductor device are provided herein. The semiconductor device includes a substrate; a fin structure arranged on the substrate and including a ridge portion and a bottom portion between the ridge portion and the substrate, wherein the ridge portion comprises a channel region and a fin region between the channel region and the bottom portion, a critical dimension of the bottom portion in a cross-fin direction is gradually increased toward the substrate to twice or more of a critical dimension of the channel region in the cross-fin direction; a metal gate structure disposed on the fin structure extending the cross-fin direction; and an epitaxy region disposed beside the metal gate structure in a lengthwise direction of the fin structure and connected to the fin structure.

Abstract: A fan-out type packaging structure includes a strain adjustment layer, a plurality of chips, an encapsulation layer, a redistribution layer, and a plurality of solder balls. The strain adjustment layer is made of a polymer material and has at least 95% laser absorbance. The plurality of chips are partially embedded in the strain adjustment layer and are spaced apart from each other. The encapsulation layer surrounds the chips and is connected to the strain adjustment layer. The redistribution layer covers the encapsulation layer and the chips. The plurality of solder balls are disposed on the redistribution layer and are spaced apart from each other.

Abstract: Some implementations described herein provide techniques and apparatuses for improving a uniformity of a flow of a gas across a semiconductor substrate in an etch tool. The etch tool includes an exhaust port located at a bottom center of a chamber of the etch tool. The etch tool further includes a flow-control subsystem that includes an impeller and a thermal component. As a result of the flow-control subsystem varying a rotational velocity of the impeller, and/or an amount of heat transferred from the thermal component, the uniformity of the flow of the gas across the semiconductor substrate may be improved. In this way, a uniformity of an etching rate may be increased and contamination defects due to a clustering of particulates may be decreased, resulting in an increase in a yield of semiconductor product fabricated using the etch tool.

Abstract: The present invention relates to a method of treating moderate or severe symptoms of COVID-19 using a plant composition. The plant composition comprises Prepared Monkshood Daughter Root (Aconitum carmichaelii), Fragrant Solomonseal Rhizome (Polygonatum odoratum), Indian Bread (Poria cocos), Pinellia tuber (Pinellia ternata), Oriental Wormwood Herb (Artemisia scoparia), Scutellaria Root (Scutellaria baicalensis), Mongolian Snakegourd Fruit (Trichosanthes kirilowii), Magnolia Bark (Magnolia officinalis), Heartleaf Houttuynia Herb (Houttuynia cordata), and Baked Licorice Root and Rhizome (Glycyrrhiza glabra), which is used as a traditional Chinese medicine composition.

Abstract: The present invention relates to a plant composition, a traditional Chinese medicine composition and use thereof. The plant composition comprises Prepared Monkshood Daughter Root (Aconitum carmichaelii), Fragrant Solomonseal Rhizome (Polygonatum odoratum), Indian Bread (Poria cocos), Pinellia tuber (Pinellia ternata), Oriental Wormwood Herb (Artemisia scoparia), Scutellaria Root (Scutellaria baicalensis), Mongolian Snakegourd Fruit (Trichosanthes kirilowii), Magnolia Bark (Magnolia officinalis), Heartleaf Houttuynia Herb (Houttuynia cordata) and Baked Licorice Root and Rhizome (Glycyrrhiza glabra), which is used as a traditional Chinese medicine composition. In addition, the traditional Chinese medicine composition can be used to treat pulmonary embolism or pulmonary fibrosis.

Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Abstract: A method for manufacturing a semiconductor structure includes disposing a wafer in a processing chamber, in which the wafer is laterally surrounded by a focus ring. A plasma is formed in the processing chamber to process the wafer. A thickness of the focus ring is detected. A plasma direction of the plasma over a peripheral region of the wafer is adjusted according to the thickness of the focus ring.

Abstract: A command script editing method, a command script editor and a graphic user interface are provided. The command script editing method includes the following steps. The command node is edited according to at least one inputting action or at least one image identifying action performed on the operation frame when the command script editor is at an image editing mode. The command node is edited according to a setting content of at least one process action when the command script editor is at a process editing mode.

Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Abstract: A method of fabricating a thin film with a varying thickness includes the steps of providing a shadow mask with an opening, providing a carrier plate, arranging a substrate on the carrier plate, and coating the substrate through the opening whilst rotating the carrier plate relative to the shadow mask. A plurality of zones of the substrates is swept and exposed from arcuate portions of the opening per each turn by a plurality of predetermined exposure times, respectively. The varying thickness of the thin film corresponds to variation of the predetermined exposure times.