Patents by Inventor Yu-Chi Lin
Yu-Chi Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11914429Abstract: An electronic device includes a host, a display, a sliding plate, and a keyboard. The host has an operating surface. The display is pivoted to the host. The sliding plate is slidably disposed in the host, where the display is mechanically coupled to the sliding plate, and the sliding plate includes a plat portion and a recess portion that are arranged side by side. The keyboard is integrated to the host. The keyboard includes a key structure, where the key structure includes a key cap and a reciprocating element, and the key cap is exposed from the operating surface of the host. The reciprocating element is disposed between the key cap and the sliding plate and has a first end connected to the key cap and a second end contacting the sliding plate. The second end is located on a sliding path of the plat portion and the recess portion.Type: GrantFiled: March 9, 2023Date of Patent: February 27, 2024Assignee: Acer IncorporatedInventors: Hung-Chi Chen, Shun-Bin Chen, Huei-Ting Chuang, Yen-Chieh Chiu, Yu-Wen Lin, Yen-Chou Chueh, Po-Yi Lee
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Publication number: 20240055526Abstract: A semiconductor device and a method of fabricating a semiconductor device are provided herein. The semiconductor device includes a substrate; a fin structure arranged on the substrate and including a ridge portion and a bottom portion between the ridge portion and the substrate, wherein the ridge portion comprises a channel region and a fin region between the channel region and the bottom portion, a critical dimension of the bottom portion in a cross-fin direction is gradually increased toward the substrate to twice or more of a critical dimension of the channel region in the cross-fin direction; a metal gate structure disposed on the fin structure extending the cross-fin direction; and an epitaxy region disposed beside the metal gate structure in a lengthwise direction of the fin structure and connected to the fin structure.Type: ApplicationFiled: August 11, 2022Publication date: February 15, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chi LIN, Yu-Ting WENG, Chiung Wen Hsu, Chao-Cheng Chen
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Publication number: 20230411231Abstract: A fan-out type packaging structure includes a strain adjustment layer, a plurality of chips, an encapsulation layer, a redistribution layer, and a plurality of solder balls. The strain adjustment layer is made of a polymer material and has at least 95% laser absorbance. The plurality of chips are partially embedded in the strain adjustment layer and are spaced apart from each other. The encapsulation layer surrounds the chips and is connected to the strain adjustment layer. The redistribution layer covers the encapsulation layer and the chips. The plurality of solder balls are disposed on the redistribution layer and are spaced apart from each other.Type: ApplicationFiled: June 12, 2023Publication date: December 21, 2023Inventors: Chih-Lung YU, Pin-Sheng WANG, Yan-Chiuan LIOU, Yu-Chuan LIU, Yu-Chi LIN, Teng-Kuei CHEN
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Publication number: 20230343567Abstract: Some implementations described herein provide techniques and apparatuses for improving a uniformity of a flow of a gas across a semiconductor substrate in an etch tool. The etch tool includes an exhaust port located at a bottom center of a chamber of the etch tool. The etch tool further includes a flow-control subsystem that includes an impeller and a thermal component. As a result of the flow-control subsystem varying a rotational velocity of the impeller, and/or an amount of heat transferred from the thermal component, the uniformity of the flow of the gas across the semiconductor substrate may be improved. In this way, a uniformity of an etching rate may be increased and contamination defects due to a clustering of particulates may be decreased, resulting in an increase in a yield of semiconductor product fabricated using the etch tool.Type: ApplicationFiled: April 22, 2022Publication date: October 26, 2023Inventors: Liang Yu CHEN, Yu-Chi LIN, Yu Hsi TANG, Chih-Teng LIAO
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Publication number: 20230124965Abstract: The present invention relates to a plant composition, a traditional Chinese medicine composition and use thereof. The plant composition comprises Prepared Monkshood Daughter Root (Aconitum carmichaelii), Fragrant Solomonseal Rhizome (Polygonatum odoratum), Indian Bread (Poria cocos), Pinellia tuber (Pinellia ternata), Oriental Wormwood Herb (Artemisia scoparia), Scutellaria Root (Scutellaria baicalensis), Mongolian Snakegourd Fruit (Trichosanthes kirilowii), Magnolia Bark (Magnolia officinalis), Heartleaf Houttuynia Herb (Houttuynia cordata) and Baked Licorice Root and Rhizome (Glycyrrhiza glabra), which is used as a traditional Chinese medicine composition. In addition, the traditional Chinese medicine composition can be used to treat pulmonary embolism or pulmonary fibrosis.Type: ApplicationFiled: October 19, 2022Publication date: April 20, 2023Inventors: YI-CHANG SU, WEN-HUI CHIOU, YUH-CHIANG SHEN, WEN-CHI WEI, KENG-CHANG TSAI, CHIA-CHING LIAO, YU-HWEI TSENG, CHUN-TANG CHIOU, YU-CHI LIN, LI-HSIANG WANG
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Publication number: 20230122849Abstract: The present invention relates to a method of treating moderate or severe symptoms of COVID-19 using a plant composition. The plant composition comprises Prepared Monkshood Daughter Root (Aconitum carmichaelii), Fragrant Solomonseal Rhizome (Polygonatum odoratum), Indian Bread (Poria cocos), Pinellia tuber (Pinellia ternata), Oriental Wormwood Herb (Artemisia scoparia), Scutellaria Root (Scutellaria baicalensis), Mongolian Snakegourd Fruit (Trichosanthes kirilowii), Magnolia Bark (Magnolia officinalis), Heartleaf Houttuynia Herb (Houttuynia cordata), and Baked Licorice Root and Rhizome (Glycyrrhiza glabra), which is used as a traditional Chinese medicine composition.Type: ApplicationFiled: October 19, 2022Publication date: April 20, 2023Inventors: YI-CHANG SU, WEN-HUI CHIOU, YUH-CHIANG SHEN, WEN-CHI WEI, KENG-CHANG TSAI, CHIA-CHING LIAO, YU-HWEI TSENG, CHUN-TANG CHIOU, YU-CHI LIN, LI-HSIANG WANG, CHIEN-HSIEN HUANG, CHIA-MO LIN, CHI-KUEI LIN, YI-CHIA HUANG, CHIEN-JUNG LIN, JUI-SHAN LIN, YA-SUNG YANG, CHUN-HSIANG CHIU, SHUN-PING CHENG, HSIEN-HWA KUO, WU-PU LIN, CHEN-SHIEN LIN, BO-CHENG LAI, YUAN-NIAN HSU, TSUNG-LUNG TSAI, WEI-CHEN HSU, TIENG-SIONG FONG, YI-WEN HUANG, CHIA-I TSAI, YA-CHEN YANG, MING-CHE TSAI, MING-HUEI CHENG, SHIH-WEI HUANG
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Publication number: 20230049675Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.Type: ApplicationFiled: October 28, 2022Publication date: February 16, 2023Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsiao-Wen ZAN, Hsin-Fei MENG, Yu-Chi LIN, Shang-Yu YU, Ting-Wei TUNG, Yi-Chu WU, Yu-Nung MAO
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Publication number: 20230036955Abstract: A method for manufacturing a semiconductor structure includes disposing a wafer in a processing chamber, in which the wafer is laterally surrounded by a focus ring. A plasma is formed in the processing chamber to process the wafer. A thickness of the focus ring is detected. A plasma direction of the plasma over a peripheral region of the wafer is adjusted according to the thickness of the focus ring.Type: ApplicationFiled: July 29, 2021Publication date: February 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Lun KE, Yu-Chi LIN, Yi-Tsang HSIEH, Yu-Hsi TANG, Chih-Teng LIAO
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Publication number: 20220365517Abstract: A command script editing method, a command script editor and a graphic user interface are provided. The command script editing method includes the following steps. The command node is edited according to at least one inputting action or at least one image identifying action performed on the operation frame when the command script editor is at an image editing mode. The command node is edited according to a setting content of at least one process action when the command script editor is at a process editing mode.Type: ApplicationFiled: May 12, 2021Publication date: November 17, 2022Inventors: Yu-Chi LIN, Li-Hsin YANG, Yu-Shan HSU
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Patent number: 11499937Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.Type: GrantFiled: July 18, 2019Date of Patent: November 15, 2022Assignee: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Yu-Chi Lin, Shang-Yu Yu, Ting-Wei Tung, Yi-Chu Wu, Yu-Nung Mao
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Patent number: 11499219Abstract: A method of fabricating a thin film with a varying thickness includes the steps of providing a shadow mask with an opening, providing a carrier plate, arranging a substrate on the carrier plate, and coating the substrate through the opening whilst rotating the carrier plate relative to the shadow mask. A plurality of zones of the substrates is swept and exposed from arcuate portions of the opening per each turn by a plurality of predetermined exposure times, respectively. The varying thickness of the thin film corresponds to variation of the predetermined exposure times.Type: GrantFiled: November 10, 2020Date of Patent: November 15, 2022Assignee: National Chiao Tung UniversityInventors: Cheng-Sheng Huang, Chi-Yung Hsieh, Yu-Chi Lin, Chih-Chung Wu, Chi-Fang Huang
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Publication number: 20220302145Abstract: The embodiments of the invention provide a semiconductor device including a substrate, a gate, a source/drain region, a first dielectric layer, an etching stop layer, a second dielectric layer, an additional dielectric layer, a conductive contact and a bit line. The gate is disposed on the substrate. The source/drain region is disposed in the substrate and on a side of the gate. The first dielectric layer is disposed on the gate. The etching stop layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the etching stop layer. The additional dielectric layer is disposed in the second dielectric layer and the etching stop layer. The conductive contact penetrates through the first dielectric layer and is electrically connected to the source/drain region. The bit line penetrates through second dielectric layer, the etching stop layer and the additional dielectric layer to electrically connect to the conductive contact.Type: ApplicationFiled: August 19, 2021Publication date: September 22, 2022Applicant: Winbond Electronics Corp.Inventor: Yu-Chi Lin
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Publication number: 20220301922Abstract: A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.Type: ApplicationFiled: July 9, 2021Publication date: September 22, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsien-Chung HUANG, Chiung-Wen HSU, Mei-Ju KUO, Yu-Ting WENG, Yu-Chi LIN, Ting-Chung WANG, Chao-Cheng CHEN
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Patent number: 11403728Abstract: An automatic adjusting method for equipment and a smart adjusting device using the same are provided. The automatic adjusting method of the equipment includes the following steps. A template frame from the equipment is obtained in an initial period. Several clear frames are obtained in one window period. Each of the template frame and the clear frame has a pixel variation. The pixel variation of the template frame is the largest in the initial period. The pixel variation of each of the clear frame is greater than a threshold. Each of the clear frame is compared with the template frame to obtain an offset. A statistical value of the offsets is calculated. A parameter of the equipment is adjusted to reduce the statistical value.Type: GrantFiled: June 19, 2020Date of Patent: August 2, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Chi Lin, Li-Hsin Yang, Ching-Pei Lin, Ming-Wei Chen, Wei-Hong Zhu
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Publication number: 20220130706Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.Type: ApplicationFiled: January 10, 2022Publication date: April 28, 2022Inventors: Yu-Chi LIN, Huai-Tei YANG, Lun-Kuang TAN, Wei-Jen LO, Chih-Teng LIAO
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Publication number: 20220033954Abstract: A method of fabricating a thin film with a varying thickness includes the steps of providing a shadow mask with an opening, providing a carrier plate, arranging a substrate on the carrier plate, and coating the substrate through the opening whilst rotating the carrier plate relative to the shadow mask. A plurality of zones of the substrates is swept and exposed from arcuate portions of the opening per each turn by a plurality of predetermined exposure times, respectively. The varying thickness of the thin film corresponds to variation of the predetermined exposure times.Type: ApplicationFiled: November 10, 2020Publication date: February 3, 2022Inventors: Cheng-Sheng Huang, Chi-Yung Hsieh, Yu-Chi Lin, Chih-Chung Wu, Chi-Fang Huang
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Patent number: 11227747Abstract: The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.Type: GrantFiled: October 18, 2019Date of Patent: January 18, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Chi Lin, Yi-Wei Chiu, Hung-Jui Chang, Chin-Hsing Lin, Yu Lun Ke
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Patent number: 11222805Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.Type: GrantFiled: April 1, 2020Date of Patent: January 11, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Chi Lin, Huai-Tei Yang, Lun-Kuang Tan, Wei-Jen Lo, Chih-Teng Liao
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Publication number: 20210358071Abstract: An automatic adjusting method for equipment and a smart adjusting device using the same are provided. The automatic adjusting method of the equipment includes the following steps. A template frame from the equipment is obtained in an initial period. Several clear frames are obtained in one window period. Each of the template frame and the clear frame has a pixel variation. The pixel variation of the template frame is the largest in the initial period. The pixel variation of each of the clear frame is greater than a threshold. Each of the clear frame is compared with the template frame to obtain an offset. A statistical value of the offsets is calculated. A parameter of the equipment is adjusted to reduce the statistical value.Type: ApplicationFiled: June 19, 2020Publication date: November 18, 2021Inventors: Yu-Chi LIN, Li-Hsin YANG, Ching-Pei LIN, Ming-Wei CHEN, Wei-Hong ZHU
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Publication number: 20210313212Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.Type: ApplicationFiled: April 1, 2020Publication date: October 7, 2021Inventors: Yu-Chi LIN, Huai-Tei YANG, Lun-Kuang TAN, Wei-Jen LO, Chih-Teng LIAO