Abstract: A network device generates one or more search keys to include information retrieved from one or more fields in a header of a packet being processed by the network device. The network device performs a first-stage search in a first-stage memory to map the one or more search keys to one or more search key identifiers. Respective ones of the one or more search key identifiers are shorter than corresponding ones of the one or more search keys. The network device also performs a second-stage search in a second-stage memory based on a combination of the one or more search key identifiers to identify an entry that matches the combination of the one or more search key identifiers. The entry indicates a processing rule matched by the packet. The network device performs, with respect to the packet, an action associated with the rule.

Abstract: An ablation system comprises: an ablation catheter and a console. The ablation catheter comprises: a shaft including a proximal end, a distal portion and a distal end; an ablation element configured to deliver energy to tissue; and a force maintenance assembly comprising a force maintenance element and configured to control and/or assess contact force between the ablation element and cardiac tissue. The console is configured to operably attach to the ablation catheter and comprises: an energy delivery assembly configured to provide energy to the ablation element. Methods of ablating tissue are also provided.

Abstract: A portable electronic device with a battery switching function is provided. The portable electronic device has two battery switching assemblies corresponding to each battery. Each battery switching assembly has a primary fastener and a secondary fastener corresponding to each other. When the primary fastener is engaged with the secondary fastener, the secondary fastener engages with the corresponding battery so that the battery cannot be detached from the casing of the portable electronic device. When the primary fastener and the secondary fastener are disengaged, the Hall sensor corresponding to the primary fastener sends a signal to a control unit. Then the control unit turns off the power supply of the corresponding battery and switches to another battery to supply power, or closes a specific application to reduce power consumption.

Abstract: A bidirectional hybrid power conversion system includes a symmetric hybrid unit, a transient state detection unit, a conversion control unit, and a feedback unit. The symmetric hybrid unit converts an input voltage into an output voltage with different conversion ratios. The feedback unit generates a feedback signal according to the output voltage and a reference voltage. The conversion control unit is connected with the symmetric hybrid unit and the feedback unit controls the symmetric hybrid unit to adjust the conversion ratio for regulating the output voltage according to the feedback signal. The transient state detection unit is connected with the feedback unit and the conversion control unit outputs a detection signal to the conversion unit according to the feedback signal. According to the detection signal, the conversion control unit controls the symmetric hybrid unit adjusts the conversion ratio, and converts the input voltage into the output voltage stably.

Abstract: An image processing method for human body posture transformation, which is executed by an electronic device reading an executable code to identify a preset object using artificial intelligence, and performing image processing to capture target postures of the preset object. The method includes the steps of identifying an object, detecting postures, and capturing target postures. The steps involve detecting the preset object undergoing transformation between different postures within a target duration. A capture requirement is met when each posture is visible for a posture visibleness duration and reaches a duration threshold. A target posture transformation video which lasts for a segment duration is captured from an initial image and uploaded to the cloud for storage. An electronic device for human body posture transformation image processing, a terminal device in communication connection with the electronic device, and a non-transient computer-readable recording medium are further provided.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: In some aspects of the present disclosure, a bandgap reference circuit includes a first current mirror and a first resistor coupled to the first current mirror to provide a proportional to absolute temperature (PTAT) voltage. The circuit includes a second current mirror and a bipolar junction transistor (BJT) device coupled to the second current mirror to provide a complementary to the absolute temperature (CTAT) voltage. The circuit includes an output node to provide a bandgap voltage that is a weighted sum of the PTAT voltage and the CTAT voltage. The circuit includes a second resistor coupled between the output node and a first node, wherein the first node is coupled between the first resistor and the first current mirror. The circuit includes a third resistor coupled between the output node and a second node, wherein the second node is coupled between the BJT device and the second current mirror.

Abstract: A semiconductor device includes a plurality of semiconductor fins, at least one gate stack, a refill isolation, and an air gap. Each of the semiconductor fins extends in an X direction. Two adjacent ones of the semiconductor fins are spaced apart from each other in a Y direction transverse to the X direction. The at least one gate stack has two stack sections spaced apart from each other in the Y direction. The stack sections are disposed over two adjacent ones of the semiconductor fins, respectively. The refill isolation and the air gap are disposed between the stack sections.

Abstract: A method includes forming a dummy gate stack on a semiconductor fin, forming gate spacers on sidewalls of the dummy gate stack, forming a first inter-layer dielectric, with the gate spacers and the dummy gate stack being in the first inter-layer dielectric, removing the dummy gate stack to form a trench between the gate spacers, forming a replacement gate stack in the trench, and depositing a dielectric capping layer. A bottom surface of the dielectric capping layer contacts a first top surface of the replacement gate stack and a second top surface of the first inter-layer dielectric. A second inter-layer dielectric is deposited over the dielectric capping layer. A source/drain contact plug is formed and extends into the second inter-layer dielectric, the dielectric capping layer, and the first inter-layer dielectric.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.

Abstract: Various embodiments of the present application are directed towards image sensors including composite backside illuminated (CBSI) structures to enhance performance. In some embodiments, a first trench isolation structure extends into a backside of a substrate to a first depth and comprises a pair of first trench isolation segments. A photodetector is in the substrate, between and bordering the first trench isolation segments. A second trench isolation structure is between the first trench isolation segments and extends into the backside of the substrate to a second depth less than the first depth. The second trench isolation structure comprises a pair of second trench isolation segments. An absorption enhancement structure overlies the photodetector, between the second trench isolation segments, and is recessed into the backside of the semiconductor substrate. The absorption enhancement structure and the second trench isolation structure collectively define a CBSI structure.

Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

Abstract: Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions, and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. The BDTI structure comprises a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiode. The PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure.

Abstract: A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.

Abstract: An optical sensing module includes a substrate, an optical sensing device, and a plurality of solders. The substrate has an upper surface, and the upper surface has a plurality of first soldering pads. The optical sensing device is disposed upright on the substrate. The optical sensing device includes a transposition plate and an optical sensing package. The transposition plate includes a first surface, a second surface, and a third surface. The first surface has a plurality of second soldering pads, the second surface has a plurality of conductive through holes, and the third surface has a plurality of metal ribs. The conductive through holes are electrically connected to the second soldering pads and the metal ribs. The optical sensing package is disposed on the first surface and electrically connected to the second soldering pads. The plurality of solders climb onto the plurality of metal ribs, respectively.

Abstract: A semiconductor device includes a plurality of semiconductor fins, at least one gate stack, a refill isolation, and an air gap. Each of the semiconductor fins extends in an X direction. Two adjacent ones of the semiconductor fins are spaced apart from each other in a Y direction transverse to the X direction. The at least one gate stack has two stack sections spaced apart from each other in the Y direction. The stack sections are disposed over two adjacent ones of the semiconductor fins, respectively. The refill isolation and the air gap are disposed between the stack sections.

Abstract: A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.

Abstract: An integrated circuit includes a first circuit, a comparator, a counter and a control circuit. The first circuit is configured to generate a ramp reference signal. The comparator is configured generate a comparator output signal in response to comparing a pixel output signal and the ramp reference signal. The counter is coupled to the comparator, and configured to be turned on or turned off in response to the comparator output signal. The control circuit is coupled to the comparator, and configured to generate a first enable signal in response to at least a control signal, and to turn on or turn off the comparator by the first enable signal.

Abstract: Various embodiments of the present application are directed towards image sensors including composite backside illuminated (CBSI) structures to enhance performance. In some embodiments, a first trench isolation structure extends into a backside of a substrate to a first depth and comprises a pair of first trench isolation segments. A photodetector is in the substrate, between and bordering the first trench isolation segments. A second trench isolation structure is between the first trench isolation segments and extends into the backside of the substrate to a second depth less than the first depth. The second trench isolation structure comprises a pair of second trench isolation segments. An absorption enhancement structure overlies the photodetector, between the second trench isolation segments, and is recessed into the backside of the semiconductor substrate. The absorption enhancement structure and the second trench isolation structure collectively define a CBSI structure.

Abstract: An IC device includes a first anti-fuse structure including a first dielectric layer between a first gate conductor and an active area, a second anti-fuse structure including a second dielectric layer between a second gate conductor and the active area, and a first pair of conductive segments electrically connected to the first and second gate conductors and aligned along a row direction perpendicular to a column direction of the first and second gate conductors. The active area is included in a plurality of active areas, the first pair of conductive segments is included in a plurality of pairs of conductive segments, and adjacent pairs of conductive segments of the plurality of pairs of conductive segments are separated by a total of two active areas of the plurality of active areas.