Abstract: A display device including at least two light source modules and a display control substrate is provided. Each of the at least two light source substrates has a first surface and a second surface opposite to each other and includes a plurality of light emitting elements and a plurality of connection pads. The light emitting elements are located on the second surface, and the connection pads are located on the first surface and are electrically connected to the light emitting elements. The display control substrate includes a back plate and a plurality of control elements. The control elements are located on the back plate, part of the control elements are electrically connected to the connection pads to drive and control the light emitting elements, and the second surface of each of the at least two light source substrates forms a part of a display surface of the display device.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized compound. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode; forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode; forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode; filling the first void with the first dielectric layer; and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.

Abstract: A semiconductor structure includes a conductive structure over a first passivation layer. The semiconductor structure further includes a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer includes a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure, wherein a top surface of the first oxide film is planar. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure, wherein a top surface of the second oxide film is planar. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure, wherein a top surface of the third oxide film is curved.

Abstract: A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode; forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode; forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode; filling the first void with the first dielectric layer; and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized compound. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized compound. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A semiconductor structure includes a conductive structure over a first passivation layer. The semiconductor structure further includes a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer includes a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure, wherein a top surface of the first oxide film is planar. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure, wherein a top surface of the second oxide film is planar. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure, wherein a top surface of the third oxide film is curved.

Abstract: A semiconductor structure includes a conductive structure over a first passivation layer; and a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer has a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure, wherein a top surface of the first oxide film is planar. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure, wherein a top surface of the second oxide film is planar. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure, wherein a top surface of the third oxide film is curved.

Abstract: A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode; forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode; forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode; filling the first void with the first dielectric layer; and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.

Abstract: A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode; forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode; forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode; filling the first void with the first dielectric layer; and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.

Abstract: A trench is formed through a plurality of layers that are disposed over a first substrate. A first deposition process is performed to at least partially fill the trench with a first dielectric layer. The first dielectric layer delivers a tensile stress. A second deposition process is performed to form a second dielectric layer over the first dielectric layer. A third deposition process is performed to form a third dielectric layer over the second dielectric layer. The third dielectric layer delivers a first compressive stress.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized compound. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized compound. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized compound. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A semiconductor structure includes a conductive structure over a first passivation layer; and a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer has a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure, wherein a top surface of the first oxide film is planar. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure, wherein a top surface of the second oxide film is planar. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure, wherein a top surface of the third oxide film is curved.

Abstract: A semiconductor structure includes a conductive structure over a first passivation layer. The semiconductor structure further includes a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer has a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure.

Abstract: A method of using biopolymer to synthesize titanium-containing silicon oxide material and applications thereof are disclosed. The method comprises steps: mixing a titanium source, a silicon source, an acid source, a base source, a biopolymer and a solvent to form an aqueous solution, and letting the aqueous solution react to form a semi-product; performing aging, solid-liquid separation and drying of the semi-product to obtain a dried solid; and performing calcination or extraction of the dried solid to obtain a titanium-containing silicon oxide material with a high specific surface area. The present invention adopts a biopolymer as the templating agent, which makes the fabrication process of titanium-containing silicon oxide material more environment-friendly. After calcination or extraction, the product still has superior catalytic activity, able to catalyze epoxidation of olefins and favorable for the production of epoxide.

Abstract: A method of using biopolymer to synthesize titanium-containing silicon oxide material and applications thereof are disclosed. The method comprises steps: mixing a titanium source, a silicon source, an acid source, a base source, a biopolymer and a solvent to form an aqueous solution, and letting the aqueous solution react to form a semi-product; performing aging, solid-liquid separation and drying of the semi-product to obtain a dried solid; and performing calcination or extraction of the dried solid to obtain a titanium-containing silicon oxide material with a high specific surface area. The present invention adopts a biopolymer as the templating agent, which makes the fabrication process of titanium-containing silicon oxide material more environment-friendly. After calcination or extraction, the product still has superior catalytic activity, able to catalyze epoxidation of olefins and favorable for the production of epoxide.

Abstract: A method of using biopolymer to synthesize titanium-containing silicon oxide material and applications includes mixing a titanium source, a silicon source, an acid source, a base source, a biopolymer and a solvent to form an aqueous solution, and letting the aqueous solution react to form a semi-product; performing aging, solid-liquid separation and drying of the semi-product to obtain a dried solid; and performing calcination or extraction of the dried solid to obtain a titanium-containing silicon oxide material with a high specific surface area. The present invention adopts a biopolymer as the templating agent, which makes the fabrication process of titanium-containing silicon oxide material more environment-friendly. After calcination or extraction, the product still has superior catalytic activity, able to catalyze epoxidation of olefins and favorable for the production of epoxide.