Abstract: A semiconductor structure includes a conductive structure over a first passivation layer. The semiconductor structure further includes a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer has a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure.

Abstract: A trench is formed through a plurality of layers that are disposed over a first substrate. A first deposition process is performed to at least partially fill the trench with a first dielectric layer. The first dielectric layer delivers a tensile stress. A second deposition process is performed to form a second dielectric layer over the first dielectric layer. A third deposition process is performed to form a third dielectric layer over the second dielectric layer. The third dielectric layer delivers a first compressive stress.

Abstract: A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode; forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode; forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode; filling the first void with the first dielectric layer; and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.

Abstract: A method of fabricating a semiconductor structure includes forming a conductive structure over a first passivation layer, depositing a first dielectric film continuously over the conductive structure, depositing a second dielectric film continuously over the first dielectric film, and depositing a third dielectric film over the second dielectric film. A portion of the third dielectric film is in contact with a portion of the first dielectric film.

Abstract: A memory device includes: a first conductive column structure extending through a first dielectric layer, wherein the first conductive column structure comprises a shell portion wrapping a core structure filled with a dielectric material and an end portion that is coupled to one end of the shell portion and disposed below the core structure; and a first phase change material layer formed over the first dielectric layer, wherein a lower boundary of the first phase change material layer contacts at least a first portion of the other end of the shell portion of the first conductive column structure.

Abstract: The present invention discloses a method for fabricating a titanium-containing silicon oxide material with high thermal stability and applications of the same, wherein a titanium source, a silicon source, an alkaline source, a template molecule and a peroxide are formulated into an aqueous solution; the aqueous solution reacts to generate a solid product; the solid product is separated from the aqueous solution with a solid-liquid separation process and dried; the solid product is calcined to obtain a titanium-containing silicon oxide material with high specific surface area. The titanium-containing silicon oxide material fabricated by the present invention has high thermal stability. Therefore, it still possesses superior catalytic activity after calcination. The titanium-containing silicon oxide material can be used to catalyze epoxidation of olefin and is very useful in epoxide production.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized polymer. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized polymer. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized polymer. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: A memory device includes: a first conductive column structure extending through a first dielectric layer, wherein the first conductive column structure comprises a shell portion wrapping a core structure filled with a dielectric material and an end portion that is coupled to one end of the shell portion and disposed below the core structure; and a first phase change material layer formed over the first dielectric layer, wherein a lower boundary of the first phase change material layer contacts at least a first portion of the other end of the shell portion of the first conductive column structure.

Abstract: The present invention discloses a method for fabricating a titanium-containing silicon oxide material with high thermal stability and applications of the same, wherein a titanium source, a silicon source, an alkaline source, a template molecule and a peroxide are formulated into an aqueous solution; the aqueous solution reacts to generate a solid product; the solid product is separated from the aqueous solution with a solid-liquid separation process and dried; the solid product is calcined to obtain a titanium-containing silicon oxide material with high specific surface area. The titanium-containing silicon oxide material fabricated by the present invention has high thermal stability. Therefore, it still possesses superior catalytic activity after calcination. The titanium-containing silicon oxide material can be used to catalyze epoxidation of olefin and is very useful in epoxide production.

Abstract: A method of fabricating a semiconductor structure includes forming a conductive structure over a first passivation layer, depositing a first dielectric film continuously over the conductive structure, depositing a second dielectric film continuously over the first dielectric film, and depositing a third dielectric film over the second dielectric film. A portion of the third dielectric film is in contact with a portion of the first dielectric film.

Abstract: A method for fabricating a titanium-containing silicon oxide material and an application of the same are disclosed. The method needn't use a template but directly use an amorphous silicon dioxide and a titanium source as the reactants. The reactants are mixed with a solvent and react in the solvent. The suspension generated by the reaction is processed by solid-liquid separation, flushing and drying to obtain a titanium-containing silicon oxide material. The method features a simplified fabrication process and a low fabrication cost. The titanium-containing silicon oxide material fabricated by the method has a superior catalytic activity, able to catalyze an epoxidation reaction of an olefin-group compound to generate an epoxide.

Abstract: The present invention discloses a method for fabricating a titanium-containing silicon oxide material with high thermal stability and applications of the same, wherein a titanium source, a silicon source, an alkaline source, a template molecule and a peroxide are formulated into an aqueous solution; the aqueous solution reacts to generate a solid product; the solid product is separated from the aqueous solution with a solid-liquid separation process and dried; the solid product is calcined to obtain a titanium-containing silicon oxide material with high specific surface area. The titanium-containing silicon oxide material fabricated by the present invention has high thermal stability. Therefore, it still possesses superior catalytic activity after calcination. The titanium-containing silicon oxide material can be used to catalyze epoxidation of olefin and is very useful in epoxide production.

Abstract: A method for fabricating a titanium-containing silicon oxide material and an application of the same are disclosed. The method needn't use a template but directly use an amorphous silicon dioxide and a titanium source as the reactants. The reactants are mixed with a solvent and react in the solvent. The suspension generated by the reaction is processed by solid-liquid separation, flushing and drying to obtain a titanium-containing silicon oxide material. The method features a simplified fabrication process and a low fabrication cost. The titanium-containing silicon oxide material fabricated by the method has a superior catalytic activity, able to catalyze an epoxidation reaction of an olefin-group compound to generate an epoxide.

Abstract: Disclosed is a thermoplastic polyester elastomer, which is formed by reacting 100 parts by weight of polyester and 0.01 to 2 parts by weight of an epoxy resin with two epoxy groups, wherein the polyester is formed by reacting a parts by mole of a hard-segment diol, b parts by mole of a soft-segment diol, and 1 part by mole of a diacid, wherein 1?a?3 and 0.005?b?1.5.

Abstract: Disclosed is a thermoplastic polyester elastomer, which is formed by reacting 100 parts by weight of ester and 0.01 to 2 parts by weight of an epoxy resin with two epoxy groups, wherein the ester is formed by reacting a parts by mole of a hard-segment diol, b parts by mole of a soft-segment diol, and 1 part by mole of a diacid, wherein 1?a?3 and 0.005?b?1.5.

Abstract: A method for producing an epoxide is provided. The method includes a step of performing a reaction of an olefine compound and an oxidant to form the epoxide by using a titanium-silicon molecular sieve as a catalyst, thereby increasing the conversion rate of the oxidant and the yield of the epoxide.

Abstract: A method for preparing an epoxide is disclosed. The method for preparing an epoxide includes the step of performing a reaction of an alkene and oxidant in the presence of a Ti—Si molecular sieve as a catalyst, and increases the conversion rate of hydrogen peroxide and the yield of the epoxide.

Abstract: A method for producing an epoxide is disclosed. The method includes performing a reaction of an olefin compound and an oxidant by using a titanium-silicon molecular sieve as a catalyst, in the presence of a silicon oxide containing an alkaline earth metal as a coagent. The selectivity and yield of epoxide are increased by using a silicon oxide containing an alkaline metal as a coagent.