Abstract: A method includes forming a fin that includes a first semiconductor layers and a second semiconductor layers alternatively disposed; forming a gate stack on the fin and a gate spacer disposed on a sidewall of the gate stack; etching the fin within a source/drain region, resulting in a source/drain trench; recessing the first semiconductor layers in the source/drain trench, resulting in first recesses underlying the gate spacer; forming inner spacers in the first recesses; recessing the second semiconductor layers in the source/drain trench, resulting in second recesses; and epitaxially growing a source/drain feature in the source/drain trench, wherein the epitaxially growing further includes a first epitaxial semiconductor layer extending into the second recesses; and a second epitaxial semiconductor layer on the first epitaxial semiconductor layer and filling in the source/drain trench, wherein the first and second epitaxial semiconductor layers are different in composition.

Abstract: An electronic circuit and a method of error correction are provided. The electronic circuit includes a time-to-digital converter (TDC) and an error cancelation circuit. The TDC is configured to generate a first signal. The error cancelation circuit is configured to evaluate a majority of bit values of at least a portion of the first signal to generate a second signal. The number of transitions within the second signal is less than the number of transitions within the first signal.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: The application provides a content addressable memory (CAM) device and a method for searching and comparing data thereof. The CAM device comprises: a plurality of memory strings; and a sensing amplifier circuit coupled to the memory strings; wherein in data searching, a search data is compared with a storage data stored in the memory strings, the memory strings generate a plurality of string currents, the sensing amplifier circuit senses the string currents to generate a plurality of sensing results; based on the sensing results, a match degree between the search data and the storage data is determined as one of the follows: all-matched, partially-matched and all-mismatched.

Abstract: An electronic circuit and a method of error correction are provided. The electronic circuit includes a time-to-digital converter (TDC) and an error cancelation circuit. The TDC is configured to generate a first signal. The error cancelation circuit is configured to evaluate a majority of bit values of at least a portion of the first signal to generate a second signal. The number of transitions within the second signal is less than the number of transitions within the first signal.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: A method includes providing a substrate, a dummy fin, and a stack of semiconductor channel layers; forming an interfacial layer wrapping around each of the semiconductor channel layers; depositing a high-k dielectric layer, wherein a first portion of the high-k dielectric layer over the interfacial layer is spaced away from a second portion of the high-k dielectric layer on sidewalls of the dummy fin by a first distance; depositing a first dielectric layer over the dummy fin and over the semiconductor channel layers, wherein a merge-critical-dimension of the first dielectric layer is greater than the first distance thereby causing the first dielectric layer to be deposited in a space between the dummy fin and a topmost layer of the stack of semiconductor channel layers, thereby providing air gaps between adjacent layers of the stack of semiconductor channel layers and between the dummy fin and the stack of semiconductor channel layers.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: The present invention relates to a dynamic adjustment method for adjusting a frame per second. The method includes steps of cyclically sampling a first image and a second image captured by an image capturing device based on a sampling time interval and uploading the first image and the second image to a server; executing an image variation rate algorithm on the server to acquire an image variation rate by comparing the first image with the second image; and adjusting the frame per second for the image capturing device to a first frame per second when all of the image variation rates within a first time window are less than a first threshold.

Abstract: Circuits and methods for compensating mismatches in sense amplifiers are disclosed. In one example, a circuit is disclosed. The circuit includes: a first branch, a second branch, a first plurality of trimming transistors and a second plurality of trimming transistors. The first branch comprises a first transistor, a second transistor, and a first node coupled between the first transistor and the second transistor. The second branch comprises a third transistor, a fourth transistor, and a second node coupled between the third transistor and the fourth transistor. The first node is coupled to respective gates of the third transistor and the fourth transistor. The second node is coupled to respective gates of the first transistor and the second transistor. The first plurality of trimming transistors is coupled to the second transistor in parallel. The second plurality of trimming transistors is coupled to the fourth transistor in parallel.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first fin structure, a second fin structure, and a third fin structure over the substrate. Tops of the second fin structure and the third fin structure are at different height levels. The semiconductor device structure also includes a first epitaxial structure extending across sidewalls of the first fin structure and the second fin structure and a second epitaxial structure on the third fin structure. The first epitaxial structure is closer to the substrate than the second epitaxial structure.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A method and a system for verifying an image interface, and an image equipment are provided. The system includes a memory, a receiving module, and a transmitting module; the receiving module connected to an image output interface of a device under test (DUT), the transmitting module connected to an image input interface of the DUT. The method includes obtaining at least one predetermined image from the memory, and generating serial data stream according to the at least one predetermined image; controlling the transmitting module to transmit the serial data stream to the image input interface; controlling the receiving module to obtain returned serial data stream from the image output interface; and determining the image interface of the DUT to be normal when the receiving module successfully obtains the returned serial data stream from the image output interface.

Abstract: A controller for a power supply device includes a transmission terminal, first and second memory circuits, a determining circuit, and a control circuit. The determining circuit generates a first mode signal when an input voltage value is lower than a reference voltage value and generates a second mode signal when the input voltage value is greater than or equal to the reference voltage value. The control circuit enters a first mode and a second mode in response to the first mode signal and the second mode signal, respectively. The control circuit writes a control parameter from the transmission terminal into the first memory circuit in the first mode and uses the control parameter in the second mode to test the power supply device. When the control parameter meets an expected function of the power supply device, the control circuit writes the control parameter into the second memory circuit.

Abstract: The present disclosure relates to an anti-fatigue Lactobacillus composition. The anti-fatigue Lactobacillus composition, which includes at least one of Lactobacillus brevis GKEX, Lactobacillus plantarum GKK1 and Lactobacillus johnsonii GKJ2 as an active ingredient, administered to a healthy subject for a continuous period of time, can significantly improve fatigue-related biochemical indices and prolong aerobic exercise time to exhaustion, and thus can be used as an active ingredient for preparation of various compositions for anti-fatigue and/or improving athletic ability.

Abstract: A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.

Abstract: A high-power seismic wave early warning method is provided to use an earliest-arriving seismic wave to estimate a maximum power value of a later-arriving high-power seismic wave for a target site. When the estimated maximum power value of the later-arriving high-power seismic wave is greater than a warning value, an earthquake early warning is transmitted to an earthquake early warning device that is located at the target site.

Abstract: This invention provides an antenna assembly equipped with a sub-wavelength structured enhancer, comprising an antenna supporting substrate with a top surface and a bottom surface opposite to each other; a first patch antenna is disposed on the top surface of the antenna supporting substrate or inside of the antenna supporting substrate; a ground layer is disposed under the bottom surface of the antenna supporting substrate; a signal feeding layer for transmitting satellite communicating signals is disposed on one of surfaces of the antenna supporting substrate, or inside of the antenna supporting substrate, or under the first patch antenna, or under a side of the ground layer back to the antenna supporting substrate; and a solid sub-wavelength structured enhancer is disposed above the first patch antenna and spaced with each other by an air gap ranging between 7 mm and 47 mm.

Abstract: A voice coil motor assembly including a base, a frame, an elastic sheet, a housing, and a plurality of shock-absorbing components is provided. The frame is disposed on the base. The frame includes a bottom surface, a top surface, a plurality of side walls and a support frame. One side of the elastic sheet is disposed on the top surface of the frame and the other is disposed on the support frame. The housing is disposed above the base to receive the frame and the elastic sheet. The housing includes a housing top wall and a plurality of housing side walls surrounding the housing top wall. The shock-absorbing components are disposed on the frame and are sandwiched between the frame and the housing side walls of the housing, and/or between the support frame and the housing top wall of the housing.

Abstract: Provided are semiconductor devices and methods for manufacturing semiconductor devices. A method deposits conformal material to form a conformal liner in the trench and modifies the conformal liner such an upper liner portion is modified more than a lower liner portion. The deposition and modifying steps are repeated while a rate of deposition of the conformal material over a non-modified surface of the conformal liner is faster than a rate of deposition of the conformal material over a modified surface of the conformal liner to form a remaining unfilled gap with a V-shape. The method further includes depositing a conformal material in the remaining unfilled gap.