Abstract: A semiconductor device may be manufactured using a multiple-layer photoresist that is formed of one or more materials that reduce the likelihood and/or amount of residual material retained in the multiple-layer photoresist. A photoresist underlayer of the multiple-layer photoresist includes a polymer having a highly uniform distribution of polar group monomers. Additionally and/or alternatively, the photoresist underlayer includes a polymer that includes a main chain and a plurality of side chains coupled with the main chain. The side chains include an acid generator component. Since the acid generator component is coupled with the main chain of the polymer by the side chains as opposed to uncontrollably diffusing into the photoresist layer, the acid generated by the acid generator component upon exposure to radiation collects under the bottom of the photoresist layer in a uniform manner and enables the bottommost portions of the photoresist layer to be developed and removed.

Abstract: In some implementations, one or more semiconductor processing tools may form a first terminal of a semiconductor device by depositing a tunneling oxide layer on a first portion of a body of the semiconductor device, depositing a first volume of polysilicon-based material on the tunneling oxide layer, and depositing a first dielectric layer on an upper surface and a second dielectric layer on a side surface of the first volume of polysilicon-based material. The one or more semiconductor processing tools may form a second terminal of the semiconductor device by depositing a second volume of polysilicon-based material on a second portion of the body of the semiconductor device. A side surface of the second volume of polysilicon-based material is adjacent to the second dielectric layer.

Abstract: A method of forming a semiconductor device includes forming a plurality of non-insulator structures on a substrate, the plurality of non-insulator structures being spaced apart by trenches, forming a sacrificial layer overfilling the trenches, reflowing the sacrificial layer at an elevated temperature, wherein a top surface of the sacrificial layer after the reflowing is lower than a top surface of the sacrificial layer before the reflowing, etching back the sacrificial layer to lower the top surface of the sacrificial layer to fall below top surfaces of the plurality of non-insulator structures, forming a dielectric layer on the sacrificial layer, and removing the sacrificial layer to form air gaps below the dielectric layer.

Abstract: A polishing pad for chemical mechanical polishing comprising a polishing layer having a top polishing surface, a bottom surface and a thickness. The polishing layer comprises a porous polishing material and a window region. An exposed top surface of the transparent window is recessed from the top polishing surface. The transparent window extends from the recess region to the bottom surface of the polishing pad. The transparent window is non-porous and a portion of the top surface of the peripheral portion adjacent to the transparent window is coplanar with the top surface of the transparent window and the exposed bottom surface of the transparent window is coplanar with the bottom surface of the polishing layer.

Abstract: A polishing pad for chemical mechanical polishing comprises a polishing layer having a top polishing surface, a sub-pad located opposite from the top polishing surface, the sub-pad comprising a sub-pad material and having a bottom sub-pad surface defining a bottom surface of the polishing pad, and a window for transmitting a signal wave through the polishing pad to a substrate to be polished and back through the polishing pad for endpoint detection, the window having a top window surface, a bottom window surface, and side edges, wherein the top window surface is recessed from the top polishing surface, the bottom window surface is substantially coplanar with the bottom sub-pad surface, and the side edges are in contact with the polishing material and the sub-pad material.

Abstract: A polishing pad for chemical mechanical polishing comprising a porous polishing layer having a top polishing surface, a sub-pad located opposite from the top polishing surface, the sub-pad having a bottom sub-pad surface, and a window for transmitting a signal wave through the polishing pad to a substrate to be polished and back through the polishing pad for endpoint detection, the window having a top window surface, a bottom window surface, and side edges, wherein the top window surface is recessed from the top polishing surface, the bottom window surface is substantially coplanar with the bottom sub-pad surface, the window extending from the bottom sub-pad surface to the top window surface and the side edges are in contact with the polishing material and the sub-pad material and wherein the window is non-porous.

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate. The protective layer and the photoresist layer are selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer. The protective layer includes a polymer without a nitrogen-containing moiety, and a basic quencher, an organic acid, a photoacid generator, or a thermal acid generator.

Abstract: A system and method utilize directed self-assembly films, including block copolymers and solvents, to form features on a wafer. The solvents have high boiling points. The high boiling points of the solvents enable directed self-assembly processes to utilize very high temperature, rapid thermal annealing processes to generate a pattern of first and second polymer structures over a wafer from the directed self-assembly films. The pattern of the first and second polymer structures can be utilized to form the features on the wafer.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a photoresist layer over a substrate. The photoresist layer includes a polymer, a photoacid initiator and a crosslinker containing at least two crosslinking sites. The photoresist layer is then cured to crosslink the polymer, thereby forming a crosslinked polymer. Next, the photoresist layer is exposed to a radiation. An acid produced from exposure of the photoacid generator de-crosslinks the crosslinked polymer in exposed portions of the photoresist layer. The exposed portions of the photoresist layer are subsequently removed to form a patterned photoresist layer.

Abstract: A method of forming a semiconductor device includes forming a plurality of non-insulator structures on a substrate, the plurality of non-insulator structures being spaced apart by trenches, forming a sacrificial layer overfilling the trenches, reflowing the sacrificial layer at an elevated temperature, wherein a top surface of the sacrificial layer after the reflowing is lower than a top surface of the sacrificial layer before the reflowing, etching back the sacrificial layer to lower the top surface of the sacrificial layer to fall below top surfaces of the plurality of non-insulator structures, forming a dielectric layer on the sacrificial layer, and removing the sacrificial layer to form air gaps below the dielectric layer.

Abstract: In a method of manufacturing a reflective mask, an adhesion layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an absorber layer disposed over the capping layer, and a hard mask layer disposed over the absorber layer. A photoresist pattern is formed over the adhesion layer, the adhesion layer is patterned, the hard mask layer is patterned, and the absorber layer is patterned using the patterned hard mask layer as an etching mask. The photoresist layer has a higher adhesiveness to the adhesion layer than to the hard mask layer.

Abstract: Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.

Abstract: A high-resolution imaging lens proofed against high-temperature instability includes a first lens with a negative power, a second lens with a negative power, a third lens with a positive power, a fourth lens with a negative power, a fifth lens with a positive power, and a sixth lens with a positive power. The first to the sixth lenses satisfy conditions of F1<0; 0.8>|F2/F6|>0.6, F2<0, F6>0; ?3>F4/F5>?2, and 2.0<F/#. Each of the first lens, the third lens, the fourth lens, and the fifth lens is made of glass, each of the second lens and the sixth lens is made of plastic.

Abstract: A lens module includes a first lens having a negative refractive power, a second lens having a positive refractive power, a third lens having a positive refractive power, a fourth lens having a positive refractive power, a fifth lens having a negative refractive power, and an imaging surface, arranged in that sequence from an object side to an image side. The lens module uses infrared light which has a wavelength ranging from 920 to 970 nm, the lens module satisfies the following conditions: 0.0002<|1/F1|<0.01; D/TTL>1.1; CT4/ET4<1.8; F1 denotes a focal length of the first lens, D denotes a diameter of a largest imaging circle of the lens module, TTL denotes a distance between an object side surface of the first lens to the imaging surface, CT4 denotes a central thickness of the fourth lens, ET4 denotes an edge thickness of the fourth lens.

Abstract: A method includes forming a bottom layer of a multi-layer mask over a first gate structure extending across a fin; performing a chemical treatment to treat an upper portion of the bottom layer of the multi-layer mask, while leaving a lower portion of the bottom layer of the multi-layer mask untreated; forming a sacrificial layer over the bottom layer of the multi-layer mask; performing a polish process on the sacrificial layer, in which the treated upper portion of the bottom layer of the multi-layer mask has a slower removal rate in the polish process than that of the untreated lower portion of the bottom layer of the multi-layer mask; forming middle and top layers of the multi-layer mask; patterning the multi-layer mask; and etching an exposed portion of the first gate structure to break the first gate structure into a plurality of second gate structures.

Abstract: In accordance with an embodiment a bottom anti-reflective layer comprises a surface energy modification group which modifies the surface energy of the polymer resin to more closely match a surface energy of an underlying material in order to help fill gaps between structures. The surface energy of the polymer resin may be modified by either using a surface energy modifying group or else by using an inorganic structure.

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate. The protective layer and the photoresist layer are selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer. The protective layer includes a polymer without a nitrogen-containing moiety, and a basic quencher, an organic acid, a photoacid generator, or a thermal acid generator.

Abstract: A high-resolution imaging lens proofed against high-temperature instability includes a first lens with a negative power, a second lens with a negative power, a third lens with a positive power, a fourth lens with a negative power, a fifth lens with a positive power, and a sixth lens with a positive power. The first to the sixth lenses satisfy conditions of F1<0; 0.8>|F2/F6|>0.6, F2<0, F6>0; ?3>F4/F5>?2, and 2.0<F/#. Each of the first lens, the third lens, the fourth lens, and the fifth lens is made of glass, each of the second lens and the sixth lens is made of plastic.

Abstract: In accordance with an embodiment a bottom anti-reflective layer comprises a surface energy modification group which modifies the surface energy of the polymer resin to more closely match a surface energy of an underlying material in order to help fill gaps between structures. The surface energy of the polymer resin may be modified by either using a surface energy modifying group or else by using an inorganic structure.

Abstract: A method includes providing a photoresist solution that includes a first solvent having a first volume and a second solvent having a second volume, where the first solvent is different from the second solvent and where the first volume is less than the second volume; dispersing the photoresist solution over a substrate to form a film, where the dispersing evaporates a portion of the first solvent and a portion of the second solvent such that a remaining portion of the first solvent is greater than a remaining portion of the second solvent; baking the film; after baking the film, exposing the film to form an exposed film; and developing the exposed film.