Abstract: A display device and a method for manufacturing a display device, the device including a semiconductor layer on a substrate; a gate insulation layer and an interlayer insulation layer that overlap the semiconductor layer; contact holes that penetrate the gate insulation layer and the interlayer insulation layer; a source electrode and a drain electrode that are electrically connected with the semiconductor layer through the contact holes; a light emitting diode that is connected with the drain electrode; and first spacers and second spacers between the source electrode and the interlayer insulation layer and between the drain electrode and the interlayer insulation layer in the contact holes.

Abstract: A display device includes a substrate and a display element layer on the substrate. The display element layer includes: first and second electrodes extending along a first direction and spaced apart from each other in a second direction; and light emitting elements electrically connected to the first and second electrodes. The first electrode has a first convex portion convex toward the second electrode and a first concave portion concave in a direction away from the second electrode, and the second electrode has a second convex portion convex toward the first electrode and a second concave portion concave in a direction away from the first electrode. The light emitting elements includes a first and second light emitting elements, respectively close to the first concave portion and the second concave portion based on an imaginary extension line extending in the first direction between the first electrode and the second electrode.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 ? to about 300 ?, and a thickness of the main conductive layer is in a range of about 1,000 ? to about 20,000 ?.

Abstract: A method of manufacturing a display panel includes providing an insulating substrate that includes a hole area, a display area that surrounds the hole area, and a peripheral area adjacent to the display area, forming a semiconductor pattern in the display area, forming an insulating layer, forming contact holes in the insulating layer that expose portions of the semiconductor pattern, and forming a module hole by etching a portion of the insulating layer and a portion of the insulating substrate that overlap the hole area.

Abstract: A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

Abstract: Provided is an electronic apparatus. The electronic apparatus includes a base substrate which includes a front surface and a rear surface facing each other, and in which a module hole passing through the front and rear surfaces is defined, a thin film transistor disposed on the base substrate, a light emitting device including a first electrode connected to the thin film transistor, a second electrode disposed on the first electrode, and a light emitting pattern disposed between the first electrode and the second electrode, an encapsulation layer which covers the light emitting device, an input sensing unit disposed on the base substrate and including a plurality of first conductive patterns and second conductive patterns disposed on the first conductive patterns, and an insulation layer disposed between the first conductive patterns and the second conductive patterns. The encapsulation layer is disposed between the first conductive patterns and the second conductive patterns.

Abstract: A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

Abstract: A method of manufacturing a display panel includes providing an insulating substrate that includes a hole area, a display area that surrounds the hole area, and a peripheral area adjacent to the display area, forming a semiconductor pattern in the display area, forming an insulating layer, forming contact holes in the insulating layer that expose portions of the semiconductor pattern, and forming a module hole by etching a portion of the insulating layer and a portion of the insulating substrate that overlap the hole area.

Abstract: A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

Abstract: According to an exemplary embodiment, a display substrate includes a gate metal pattern comprising a gate electrode, an active pattern disposed on the gate pattern and a source metal pattern disposed on the active pattern. The source metal pattern includes a first lower pattern disposed on the active pattern, a second lower pattern disposed on the first lower pattern, a low-resistance metal pattern disposed on the second lower pattern, and an upper pattern disposed on the low-resistance metal pattern. The first lower pattern, the second lower pattern, and the upper pattern each include a material that is the same.

Abstract: A display device includes: a pixel circuit disposed on a base layer; an insulating layer disposed on the base layer covering the pixel circuit; a first electrode disposed on the insulating layer; a second electrode disposed on the insulating layer, the second electrode being spaced apart from the first electrode in a first direction; a light-emitting element disposed between the first electrode and the second electrode; a connection electrode connecting the first electrode and the light-emitting element and connecting the second electrode and the light-emitting element; a first auxiliary insulating layer disposed on the light-emitting element; and a second auxiliary insulating layer disposed on the first auxiliary insulating layer. The second auxiliary insulating layer includes a first insulating portion overlapped with the first auxiliary insulating layer, and a second insulating portion disposed outwardly from the first insulating portion and not overlapping the first auxiliary insulating layer.

Abstract: A display device may include a substrate, an active pattern layer, a gate insulating layer, a first metal pattern layer, an interlayer insulating layer, a second metal pattern layer, and a passivation film. The active pattern layer may be disposed on the substrate. The gate insulating layer may be disposed on the active pattern layer. The first metal pattern layer may be disposed on the gate insulating layer. The interlayer insulating layer may be disposed on the first metal pattern layer. The second metal pattern layer may be disposed on the interlayer insulating layer. The passivation film may be disposed on the side wall of the second metal pattern layer.

Abstract: A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Abstract: Provided is an electronic apparatus. The electronic apparatus includes a base substrate which includes a front surface and a rear surface facing each other, and in which a module hole passing through the front and rear surfaces is defined, a thin film transistor disposed on the base substrate, a light emitting device including a first electrode connected to the thin film transistor, a second electrode disposed on the first electrode, and a light emitting pattern disposed between the first electrode and the second electrode, an encapsulation layer which covers the light emitting device, an input sensing unit disposed on the base substrate and including a plurality of first conductive patterns and second conductive patterns disposed on the first conductive patterns, and an insulation layer disposed between the first conductive patterns and the second conductive patterns. The encapsulation layer is disposed between the first conductive patterns and the second conductive patterns.

Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.