Patents by Inventor Yu-Han Tsai
Yu-Han Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11970116Abstract: An operating method of an optical system in a vehicle is provided. The optical system includes a display device. The display device includes a display panel and a plurality of light emitting units. The light emitting units are configured to emit a light to the display panel. The operating method includes the following steps. An emphasized portion of an object is determined. An image corresponding to the emphasized portion is displayed by the display device by adjusting a light intensity of at least a portion of the light emitted from the light emitting units.Type: GrantFiled: May 11, 2022Date of Patent: April 30, 2024Assignee: Innolux CorporationInventors: Yu-Chia Huang, Tsung-Han Tsai, Kuan-Feng Lee
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Patent number: 11974403Abstract: A method for manufacturing an electronic device includes the steps of providing a flexible substrate, forming an electric circuit layer on the flexible substrate at an elevated temperature, and enhancing a transmittance of the flexible substrate after forming the electric circuit layer.Type: GrantFiled: August 19, 2021Date of Patent: April 30, 2024Assignee: InnoLux CorporationInventors: Yu-Chia Huang, Kuan-Feng Lee, Tsung-Han Tsai
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Publication number: 20240136344Abstract: A display device includes a substrate, at least one light emitting unit bound on the substrate, a transparency controllable unit disposed on the substrate, and an integrated circuit unit overlapped with the substrate. The integrated circuit unit includes a semiconducting structure and a conductive structure overlapped with the semiconducting structure. The integrated circuit unit is electrically connected to the at least one light emitting unit and the transparency controllable unit.Type: ApplicationFiled: September 17, 2023Publication date: April 25, 2024Applicant: InnoLux CorporationInventors: Jia-Yuan CHEN, Yu-Chia HUANG, Tsung-Han TSAI, Kuan-Feng LEE
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Patent number: 11961444Abstract: The disclosure provides a transparent display device including a display panel. The display panel includes a display area, a non-display area, and a plurality of pixels. The non-display area is adjacent to the display area. The plurality of pixels are disposed in the display area. A difference between a transmittance of the display area and a transmittance of the non-display area is less than 30% of the transmittance of the display area.Type: GrantFiled: February 3, 2023Date of Patent: April 16, 2024Assignee: Innolux CorporationInventors: Yu-Chia Huang, Yuan-Lin Wu, Tsung-Han Tsai, Kuan-Feng Lee
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Publication number: 20240111078Abstract: A method forming a grating device includes: providing a substrate; entering the substrate into a process chamber; and depositing a grating material on the substrate to form a grating material layer on the substrate. A refractive index of the grating material gradually changes during depositing the grating material in the process chamber. The grating material layer includes a varying refractive index.Type: ApplicationFiled: September 29, 2022Publication date: April 4, 2024Inventors: Chun-Wei HUANG, Yu-Shan TSAI, Po-Han FU
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Patent number: 11942007Abstract: A transparent display device is provided. The transparent display device includes a display unit having a circuit area and a transparent area. The display unit includes a plurality of signal lines located in the circuit area, a plurality of pixel circuits electrically connected to the signal lines and located in the circuit area, a plurality of light-emitting elements driven by the pixel circuits and located in the circuit area, and an encapsulation layer located in the circuit area and the transparent area. A first thickness of the encapsulation layer located in the circuit area is different from a second thickness of the encapsulation layer located in the transparent area.Type: GrantFiled: November 4, 2022Date of Patent: March 26, 2024Assignee: INNOLUX CORPORATIONInventors: Yu-Chia Huang, Tsung-Han Tsai, Kuan-Feng Lee
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Publication number: 20240095755Abstract: A hybrid method for green intelligent manufacturing (GiM) combines the carbon reduction and the energy saving into the intelligent manufacturing based Industry 4.1 cloud platform. GiM assists companies to achieve the goal of net zero transition and help them advance to Industry 4.2 as soon as possible by simultaneously taking carbon footprint and energy issues into account. GiM collects large volumes of essential data (including carbon footprint) via cyber physical agents (CPAs), and sends them to two critical services of carbon management and intelligent energy management system (iEMS) deployed on the cloud platform. The two critical services optimize the energy dispatch schedule by strictly following the requirements of energy saving, carbon reduction, and net zero. Then, the state of zero defects of intelligent manufacturing achieved in Industry 4.1 can be upgraded to net zero of GiM in Industry 4.2.Type: ApplicationFiled: November 1, 2022Publication date: March 21, 2024Inventors: Hao TIENG, Fan-Tien CHENG, Ting-Chia OU, Tsung-Han TSAI, Yu-Yong LI
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Publication number: 20240097444Abstract: Embodiments of the present invention provide a hybrid system and method for distributed virtual power plants integrated intelligent net zero. In this method, a cyber physical agent (CPA) is utilized to collect a carbon emission information and an energy management information, and then an artificial intelligence (AI) optimization model of an intelligent central dispatch platform is utilized to obtain a power dispatch manner of the distributed virtual power plants based on the carbon emission information and the energy management information, such that the power dispatch manner of the distributed virtual power plants meets the requirements of enterprise economic benefits and net zero carbon emissions at the same time.Type: ApplicationFiled: November 1, 2022Publication date: March 21, 2024Inventors: Ting-Chia OU, Hao TIENG, Fan-Tien CHENG, Tsung-Han TSAI, Yu-Yong LI
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Patent number: 11929314Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.Type: GrantFiled: March 12, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hsien Huang, Peng-Fu Hsu, Yu-Syuan Cai, Min-Hsiu Hung, Chen-Yuan Kao, Ken-Yu Chang, Chun-I Tsai, Chia-Han Lai, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 11928261Abstract: The disclosure provides a display device. The display device includes a display panel and a vibration generating module. The vibration generating module is attached to the display panel and includes a substrate, a circuit layer, and a plurality of vibrators. The circuit layer and the plurality of vibrators are disposed on the substrate, and the plurality of vibrators are electrically connected to the circuit layer.Type: GrantFiled: October 11, 2022Date of Patent: March 12, 2024Assignee: Innolux CorporationInventors: Yu-Chia Huang, Yuan-Lin Wu, Hsiao-Lang Lin, Tsung-Han Tsai, Kuan-Feng Lee
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Publication number: 20240071947Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.Type: ApplicationFiled: August 30, 2022Publication date: February 29, 2024Inventors: Yu-Ling Tsai, Lai Wei Chih, Meng-Tsan Lee, Hung-Pin Chang, Li-Han Hsu, Chien-Chia Chiu, Cheng-Hung Lin
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Patent number: 11912006Abstract: A continuous manufacturing equipment of an elastic three-dimensional fabric and a continuous manufacturing method thereof are disclosed. The continuous manufacturing equipment includes: a film conveying device having a thermal melting film and a conveying mechanism; a cutting device used for cutting a plurality of cutting gaps on the thermal melting film; a first fabric laminating device adhering an outer fabric on one surface of the thermal melting film; and a second fabric laminating device adhering an elastic fabric on another surface of the thermal melting film in a manner of elastically stretching and then elastically recovering. As such, effects of automatic, continuous, and simple steps in manufacturing and having a high yield rate are provided.Type: GrantFiled: May 10, 2022Date of Patent: February 27, 2024Assignee: TAIWAN TEXTILE FEDERATION, R.O.C.Inventors: Shu-Hui Huang, Hung-Kung Chien, Yu-Han Tsai
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Publication number: 20230364897Abstract: A continuous manufacturing equipment of an elastic three-dimensional fabric and a continuous manufacturing method thereof are disclosed. The continuous manufacturing equipment includes: a film conveying device having a thermal melting film and a conveying mechanism; a cutting device used for cutting a plurality of cutting gaps on the thermal melting film; a first fabric laminating device adhering an outer fabric on one surface of the thermal melting film; and a second fabric laminating device adhering an elastic fabric on another surface of the thermal melting film in a manner of elastically stretching and then elastically recovering. As such, effects of automatic, continuous, and simple steps in manufacturing and having a high yield rate are provided.Type: ApplicationFiled: May 10, 2022Publication date: November 16, 2023Inventors: Shu-Hui HUANG, Hung-Kung CHIEN, Yu-Han TSAI
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Publication number: 20230215801Abstract: An interconnection structure includes a first interconnection level, a second interconnection level, a third interconnection level, and a super via structure. The second interconnection level is disposed on the first interconnection level, and the third interconnection level is disposed on the second interconnection level. The second interconnection level includes a second conductive layer and a block layer disposed in a dielectric layer. A bottom surface of the block layer is lower than a top surface of the second conductive layer in a vertical direction. The block layer is disposed between a first conductive layer of the first interconnection level and a third conductive layer of the third interconnection level in the vertical direction. The super via structure penetrates through the block layer and the second interconnection level in the vertical direction and electrically connects the first conductive layer and the third conductive layer.Type: ApplicationFiled: February 14, 2022Publication date: July 6, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Min-Shiang Hsu, Yu-Han Tsai, Chih-Sheng Chang
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Patent number: 11646264Abstract: The invention provides a semiconductor structure. The semiconductor structure includes a substrate, a first inter metal dielectric (IMD) layer, a second inter metal dielectric layer and a third inter metal dielectric layer sequentially arranged on the substrate. The first inter metal dielectric layer includes at least one first wire, the second inter metal dielectric layer includes at least one mask layer, and the third inter metal dielectric layer includes at least one third wire and a super via. The super via penetrates through the second inter metal dielectric layer, and electrically connect to the first wire and the third wire, and part of the super via directly contacts the mask layer in the second inter metal dielectric layer.Type: GrantFiled: February 4, 2021Date of Patent: May 9, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Min-Shiang Hsu, Yu-Han Tsai, Chih-Sheng Chang
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Publication number: 20220216144Abstract: The invention provides a semiconductor structure. The semiconductor structure includes a substrate, a first inter metal dielectric (IMD) layer, a second inter metal dielectric layer and a third inter metal dielectric layer sequentially arranged on the substrate. The first inter metal dielectric layer includes at least one first wire, the second inter metal dielectric layer includes at least one mask layer, and the third inter metal dielectric layer includes at least one third wire and a super via. The super via penetrates through the second inter metal dielectric layer, and electrically connect to the first wire and the third wire, and part of the super via directly contacts the mask layer in the second inter metal dielectric layer.Type: ApplicationFiled: February 4, 2021Publication date: July 7, 2022Inventors: Min-Shiang Hsu, Yu-Han Tsai, Chih-Sheng Chang
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Patent number: 11127675Abstract: An interconnection structure includes a first interlayer dielectric layer, a first conductive line, a protection layer, a second interlayer dielectric layer, and a connection plug. The first conductive line is partially disposed in the first interlayer dielectric layer. The protection layer is disposed on the first conductive line and the first interlayer dielectric layer. The protection layer covers a top surface and a sidewall of the first conductive line. The protection layer includes a recess disposed corresponding to the first conductive line in a vertical direction. The second interlayer dielectric layer is disposed on the protection layer. The connection plug penetrates at least a part of the second interlayer dielectric layer and the protection layer for being connected with the first conductive line.Type: GrantFiled: December 11, 2019Date of Patent: September 21, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Min-Shiang Hsu, Yu-Han Tsai, Chih-Sheng Chang
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Publication number: 20210159170Abstract: An interconnection structure includes a first interlayer dielectric layer, a first conductive line, a protection layer, a second interlayer dielectric layer, and a connection plug. The first conductive line is partially disposed in the first interlayer dielectric layer. The protection layer is disposed on the first conductive line and the first interlayer dielectric layer. The protection layer covers a top surface and a sidewall of the first conductive line. The protection layer includes a recess disposed corresponding to the first conductive line in a vertical direction. The second interlayer dielectric layer is disposed on the protection layer. The connection plug penetrates at least a part of the second interlayer dielectric layer and the protection layer for being connected with the first conductive line.Type: ApplicationFiled: December 11, 2019Publication date: May 27, 2021Inventors: Min-Shiang Hsu, Yu-Han Tsai, Chih-Sheng Chang
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Patent number: 10600732Abstract: A structure of semiconductor device includes a substrate. An interconnection layer is formed on the substrate including a first inter-layer dielectric (ILD) layer over the substrate. A lower wiring structure is formed in the ILD layer. A hard mask layer is disposed on the first ILD layer. The hard mask layer has a first opening and a second opening being adjacent to expose the lower wiring structure. A second ILD layer is disposed on the hard mask layer. The second ILD layer has a via opening aligned to the first opening of the mask layer and a trench pattern connecting with the via opening. The second ILD layer has a protruding portion to fill the second opening of the mask layer. A metal line layer fills the via opening and the trench pattern in the second ILD layer and the first opening of the hard mask layer.Type: GrantFiled: September 5, 2018Date of Patent: March 24, 2020Assignee: United Microelectronics Corp.Inventors: Min-Shiang Hsu, Yu-Han Tsai, Yi-Hsiu Chen, Chih-Sheng Chang
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Publication number: 20200075480Abstract: A structure of semiconductor device includes a substrate. An interconnection layer is formed on the substrate including a first inter-layer dielectric (ILD) layer over the substrate. A lower wiring structure is formed in the ILD layer. A hard mask layer is disposed on the first ILD layer. The hard mask layer has a first opening and a second opening being adjacent to expose the lower wiring structure. A second ILD layer is disposed on the hard mask layer. The second ILD layer has a via opening aligned to the first opening of the mask layer and a trench pattern connecting with the via opening. The second ILD layer has a protruding portion to fill the second opening of the mask layer. A metal line layer fills the via opening and the trench pattern in the second ILD layer and the first opening of the hard mask layer.Type: ApplicationFiled: September 5, 2018Publication date: March 5, 2020Applicant: United Microelectronics Corp.Inventors: Min-Shiang Hsu, Yu-Han Tsai, Yi-Hsiu Chen, Chih-Sheng Chang