Abstract: A portable electronic module includes a casing having an air inlet, a heat generating member disposed in the casing, and a heat dissipating mechanism. The heat dissipating mechanism includes a fixing frame disposed at the casing corresponding to the air inlet, a driving handle, a driving device for driving the driving handle to move reciprocally, and a plurality of fans. The driving handle is disposed at a side of the fixing frame and has a plurality of holes arranged alternately. The fans are pivotally connected to the fixing frame in an alternate arrangement so as to swing relative to the fixing frame. Each fan has a protruding pillar extending toward the corresponding hole. Each protruding pillar is movably disposed through the corresponding hole, so that each fan could swing with reciprocation of the driving handle to guide airflow to pass through the air inlet to the heat generating member.

Abstract: A through silicon via structure is disclosed. The through silicon via includes: a substrate; a first dielectric layer disposed on the substrate and having a plurality of first openings, in which a bottom of the plurality of first openings is located lower than an original surface of the substrate; a via hole disposed through the first dielectric layer and the substrate, in which the via hole not overlapping for all of the plurality of first openings; a second dielectric layer disposed within the plurality of first openings and on a sidewall of the via hole while filling the plurality of first openings; and a conductive material layer disposed within the via hole having the second dielectric layer on the sidewall of the via hole, thereby forming a through silicon via.

Abstract: A portable electronic device includes an electronic module and an electronic module fixing structure. The electronic module fixing structure includes a main body, a sliding component, a rod and an elastic component connected between the main body and the sliding component. The main body has a track with a positioning portion. The sliding component is slidably disposed on the main body. The rod is rotatably connected with the sliding component. An end of the rod is adapted to move along the track. When the end is located at the positioning portion, the end and the positioning portion are interfered with each other to position the sliding component. When the electronic module pushes the sliding component, the rod is rotated to drive the end to move away from the positioning portion, and the sliding component pushes the electronic module away from the main body through elastic force of the elastic component.

Abstract: A through silicon via structure is disclosed. The through silicon via includes: a substrate; a first dielectric layer disposed on the substrate and having a plurality of first openings, in which a bottom of the plurality of first openings is located lower than an original surface of the substrate; a via hole disposed through the first dielectric layer and the substrate, in which the via hole not overlapping for all of the plurality of first openings; a second dielectric layer disposed within the plurality of first openings and on a sidewall of the via hole while filling the plurality of first openings; and a conductive material layer disposed within the via hole having the second dielectric layer on the sidewall of the via hole, thereby forming a through silicon via.

Abstract: A hinge includes a pivot, two connection members pivotally connected by the pivot, a first magnetic part connected to one of the connection members, a second magnetic part moveably disposed relative to the first magnetic part and kinetically connected to the other one of the connection members, and an adjustment part kinetically connected to the other connection member and urging against the adjustment part. The magnetic moment of the second magnetic part is opposite to that of the first magnetic part. When the two connection members rotate relatively, the other connection member drives the adjustment part and the second magnetic part to rotate relative to the first magnetic part, so as to produce a repulsive moment resisting the rotation and varies with the rotation. A foldable electronic apparatus has the hinge.

Abstract: A portable electronic module includes a casing having an air inlet, a heat generating member disposed in the casing, and a heat dissipating mechanism. The heat dissipating mechanism includes a fixing frame disposed at the casing corresponding to the air inlet, a driving handle, a driving device for driving the driving handle to move reciprocally, and a plurality of fans. The driving handle is disposed at a side of the fixing frame and has a plurality of holes arranged alternately. The fans are pivotally connected to the fixing frame in an alternate arrangement so as to swing relative to the fixing frame. Each fan has a protruding pillar extending toward the corresponding hole. Each protruding pillar is movably disposed through the corresponding hole, so that each fan could swing with reciprocation of the driving handle to guide airflow to pass through the air inlet to the heat generating member.

Abstract: A hinge includes a pivot, two connection members pivotally connected by the pivot, a first magnetic part connected to one of the connection members, a second magnetic part moveably disposed relative to the first magnetic part and kinetically connected to the other one of the connection members, and an adjustment part kinetically connected to the other connection member and urging against the adjustment part. The magnetic moment of the second magnetic part is opposite to that of the first magnetic part. When the two connection members rotate relatively, the other connection member drives the adjustment part and the second magnetic part to rotate relative to the first magnetic part, so as to produce a repulsive moment resisting the rotation and varies with the rotation. A foldable electronic apparatus has the hinge.

Abstract: A method for forming a through silicon via for signal and a shielding structure is provided. A substrate is provided and a region is defined on the substrate. A radio frequency (RF) circuit is formed in the region on the substrate. A through silicon trench (TST) and a through silicon via (TSV) are formed simultaneously, wherein the TST encompasses the region to serve as a shielding structure for the RF circuit. A metal interconnection system is formed on the substrate, wherein the metal interconnection system comprises a connection unit that electrically connects the TSV to the RF circuit to provide a voltage signal.

Abstract: A power supply system used in an electronic device includes a light absorption device, exposed to a backlight source of the electronic device, for absorbing backlight irradiated by the backlight source; an energy conversion circuit, coupled to the light absorption device, for converting the backlight irradiated by the backlight source into electrical power; and a power storage device, coupled to the energy conversion circuit, for storing the electrical power of the energy conversion circuit.

Abstract: A method of fabricating a through silicon via (TSV) structure is provided, in which, a first dielectric layer is formed on the substrate, the first dielectric layer is patterned to have at least one first opening, a via hole is formed in the first dielectric layer and the substrate, a second dielectric layer is conformally formed on the first dielectric layer, the second dielectric layer has at least one second opening corresponding to the at least one first opening, and the second dielectric layer covers a sidewall of the via hole. A conductive material layer is formed to fill the via hole and the second opening. The conductive material layer is planarized to form a TSV within the via hole. A TSV structure is also provided, in which, the second dielectric layer is disposed within the first opening and on the sidewall of the via hole.

Abstract: The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on a surface of the via opening. The barrier layer is disposed on a surface of the insulation layer. The buffer layer is disposed on a surface of the barrier layer. The conductive electrode is disposed on a surface of the buffer layer and a remainder of the via opening is completely filled with the conductive electrode. A portion of the buffer layer further covers a surface of the conductive electrode at a side of the second surface and said portion is level with the second surface.

Abstract: A method of processing a substrate is provided. The method includes: providing a substrate, wherein the substrate includes a silicon layer; etching the substrate to form a cavity; filling a first conductor in part of the cavity; performing a first thermal treatment on the first conductor; filling a second conductor in the cavity to fill-up the cavity; and performing a second thermal treatment on the first conductor and the second conductor.

Abstract: A portable electronic device includes an electronic module and an electronic module fixing structure. The electronic module fixing structure includes a main body, a sliding component, a rod and an elastic component connected between the main body and the sliding component. The main body has a track with a positioning portion. The sliding component is slidably disposed on the main body. The rod is rotatably connected with the sliding component. An end of the rod is adapted to move along the track. When the end is located at the positioning portion, the end and the positioning portion are interfered with each other to position the sliding component. When the electronic module pushes the sliding component, the rod is rotated to drive the end to move away from the positioning portion, and the sliding component pushes the electronic module away from the main body through elastic force of the elastic component.

Abstract: A method of fabricating a through silicon via (TSV) structure is provided, in which, a first dielectric layer is formed on the substrate, the first dielectric layer is patterned to have at least one first opening, a via hole is formed in the first dielectric layer and the substrate, a second dielectric layer is conformally formed on the first dielectric layer, the second dielectric layer has at least one second opening corresponding to the at least one first opening, and the second dielectric layer covers a sidewall of the via hole. A conductive material layer is formed to fill the via hole and the second opening. The conductive material layer is planarized to form a TSV within the via hole. A TSV structure is also provided, in which, the second dielectric layer is disposed within the first opening and on the sidewall of the via hole.

Abstract: A method of processing a substrate is provided. The method includes: providing a substrate, wherein the substrate includes a silicon layer; etching the substrate to form a cavity; filling a first conductor in part of the cavity; performing a first thermal treatment on the first conductor; filling a second conductor in the cavity to fill-up the cavity; and performing a second thermal treatment on the first conductor and the second conductor.

Abstract: The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on a surface of the via opening. The barrier layer is disposed on a surface of the insulation layer. The buffer layer is disposed on a surface of the barrier layer. The conductive electrode is disposed on a surface of the buffer layer and a remainder of the via opening is completely filled with the conductive electrode. A portion of the buffer layer further covers a surface of the conductive electrode at a side of the second surface and said portion is level with the second surface.

Abstract: A through silicon via structure and a method of fabricating the through silicon via structure are disclosed. After an interlayer dielectric is formed, a via hole is then formed to pass through the interlayer dielectric; thereafter, a dielectric liner is formed within the via hole and extends onto the interlayer dielectric; thereafter, the via hole is filled with a conductive material; and a chemical-mechanical polishing process is performed to planarize the conductive material, using the dielectric liner on the interlayer dielectric as a stop layer of the chemical-mechanical polishing process.

Abstract: The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on the surface of the via opening. The barrier layer is disposed on the surface of the insulation layer. The conductive electrode is disposed on the surface of the buffer layer and fills the via opening. The buffer layer further covers a surface of the conductive electrode at the side of the second surface. The present invention further discloses a method of forming the TSV.

Abstract: The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on the surface of the via opening. The barrier layer is disposed on the surface of the insulation layer. The conductive electrode is disposed on the surface of the buffer layer and fills the via opening. The buffer layer further covers a surface of the conductive electrode at the side of the second surface. The present invention further discloses a method of forming the TSV.

Abstract: A docking station includes a connector, a first sliding component whereon a first incline and at least one incline are formed, and a second sliding component whereon a third incline is formed. When the second sliding component moves in a first direction so that the third incline slides relative to the first incline, the second sliding component pushes the first sliding component in a second direction for driving the connector to electrically connect with a notebook computer. The second sliding component further includes at least one protrusion. When the second sliding component moves in a third direction opposite to the first direction so that the protrusion slides relative to the second incline, the protrusion drives the first sliding component to move in a fourth direction opposite to the second direction so as to drive the connector to separate from the notebook computer.