Abstract: An optical structure is provided. The optical structure includes a sensor, a bandpass filter and a plurality of protrusions. The bandpass filter is disposed above the sensor. The protrusions are disposed on the bandpass filter. The bandpass filter allows light with a wavelength of 700 nm to 3,000 nm to pass through. The protrusions have a size distribution that controls the phase of the incident light to be between 0 and 2?.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

Abstract: An electronic device is provided. The electronic device includes an antenna array including a plurality of antenna patterns collectively configured to provide a scan-angle coverage. Each of the antenna patterns includes a curved surface.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

Abstract: Provided are an image sensor and a manufacturing method thereof. In the image sensor, an insulating layer and a first silicon layer are sequentially on a silicon base. A first isolation structure is in the first silicon layer to define an active area (AA). A doped region is in a part of the first silicon layer in the AA and in a part of the silicon base thereunder. A second silicon layer is in a part of the first silicon layer in the AA and extends into the silicon base. An interconnection structure is on the first silicon layer and electrically connected with a transistor. A second isolation structure is in the silicon base under the first isolation structure and connected to the insulating layer. A passivation layer surrounds the silicon base and is connected to the doped region. A microlens is on the silicon base.

Abstract: A backside illuminated image sensor, including a semiconductor layer, a first gate structure, and a light sensing device, is provided. The semiconductor layer has a first surface and a second surface opposite to each other. The first gate structure is disposed on the second surface. The light sensing device is located in the semiconductor layer. The light sensing device extends from the first surface to the second surface.

Abstract: A planting machine, comprising a planting water tank which is opened at the upper surface and covered with a movable cover, and planting cups for planting plants are arranged on the movable cover; a flow hold which is provided on at least one side of the planting water tank, and a lid which is set to close the flow hole; a light group, which is suspended or fixed above the planting water tank; a controller which provides an output port, the light group connect to the output port. Multiple planting water tanks can be spliced through the flow holes to form a complete indoor planting system, which can facilitate users to flexibly arrange and design the connection of the planting water tanks according to the home or furniture settings to achieve adaptation, thereby improving the existing indoor planting system.

Abstract: A ray casting system is provided. The ray casting system include a display, a camera, an interactive sensor, and a processor. The display is configured to display a virtual environment. The camera is configured to obtain a hand image including a hand of the user. The interactive sensor is configured to obtain a user instruction from the user, wherein the interactive sensor is adapted to be mounted on the hand of the user. The processor is configured to generate a control ray in the virtual environment based on the hand image and apply a displacement to the control ray based on the user instruction.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

Abstract: A backside illuminated image sensor, including a semiconductor layer, a first gate structure, and a light sensing device, is provided. The semiconductor layer has a first surface and a second surface opposite to each other. The first gate structure is disposed on the second surface. The light sensing device is located in the semiconductor layer. The light sensing device extends from the first surface to the second surface.

Abstract: A ray casting system is provided. The ray casting system include a display, a camera, an interactive sensor, and a processor. The display is configured to display a virtual environment. The camera is configured to obtain a hand image including a hand of the user. The interactive sensor is configured to obtain a user instruction from the user, wherein the interactive sensor is adapted to be mounted on the hand of the user. The processor is configured to generate a control ray in the virtual environment based on the hand image and apply a displacement to the control ray based on the user instruction.

Abstract: A hydraulic mount in which a fluid for supporting an engine of a vehicle is sealed, includes a core configured to receive vibration from outside, an insulator molded on the external side of the core, and a diaphragm spaced at a predetermined distance from the insulator, wherein a fluid is sealed between the insulator and the diaphragm, and an upper chamber and a lower chamber are provided between the insulator and the diaphragm by a nozzle assembly. The nozzle assembly includes an upper nozzle located adjacent to the upper chamber, a lower nozzle coupled to the upper nozzle and located adjacent to the lower chamber, and a membrane located between the upper nozzle and the lower nozzle.

Abstract: A sleep monitoring system and a sleep monitoring method are provided. The sleep monitoring system includes a receiver, a transmitter, a storage and a processing circuit. The receiver and the transmitter are disposed in the target field, and the transmitter transmits a wireless detection signal to the target field. The user is located between the receiver and the transmitter, and the receiver receives the wireless detection signal over multiple communication links. The processing circuit is electrically connected to the receiver and the storage, and analyzes a change of the wireless detection signal within a predetermined time, so as to detect a sleep time of a user within the predetermined time, and obtains a sleep quality of the user within the sleep time.

Abstract: A back side illumination (BSI) image sensor includes an epitaxial substrate, a deep trench isolation (DTI) structure from one surface to the other surface of the epitaxial substrate, a buried oxide layer on the epitaxial substrate, an epitaxial layer, a well region, a floating diffusion (FD) region, a shallow trench isolation (STI) structure, and vertical transfer gates (VTGs). The buried oxide layer has openings exposing the epitaxial substrate, and the epitaxial layer is formed on the epitaxial substrate and covers the buried oxide layer. The well region is in the epitaxial layer and the epitaxial substrate. The FD region is in the well region above the buried oxide layer, and a width of the buried oxide layer is larger than that of the FD region. The STI structure is in the epitaxial layer. The VTGs are in the epitaxial layer and through the openings of the buried oxide layer.

Abstract: A thermoelectric driving wearable system includes a thermoelectric device and an electrical stimulating assembly. The thermoelectric device includes two thermal interface material layers and a thermoelectric converting layer. The two thermal interface material layers are configured for contacting a heat source and a cold source, respectively. The thermoelectric converting layer is located between the two thermal interface material layers and configured for generating an electric energy according to a temperature difference between the heat source and the cold source. The electrical stimulating assembly is electrically connected to the thermoelectric device and configured for being disposed at a skin surface, and the electrical stimulating assembly receives the electric energy and transmits a current to a stimulated region.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.