Patents by Inventor Yu-Hsi LAI

Yu-Hsi LAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabricating method of trench gate metal oxide semiconductor field effect transistor
    Patent number: 9525037
    Abstract: A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: December 20, 2016
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Chun-Hong Peng, Yu-Hsi Lai
  • FABRICATING METHOD OF TRENCH GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
    Publication number: 20150318366
    Abstract: A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.
    Type: Application
    Filed: June 29, 2015
    Publication date: November 5, 2015
    Inventors: Chun-Hong Peng, Yu-Hsi Lai
  • TRENCH GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND FABRICATING METHOD THEREOF
    Publication number: 20140110777
    Abstract: A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.
    Type: Application
    Filed: October 18, 2012
    Publication date: April 24, 2014
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hong PENG, Yu-Hsi LAI