Abstract: A spread spectrum clock generator for generating a spread spectrum clock signal is provided. The spread spectrum clock generator includes a phase-locked loop system and a random walk modulator. The random walk modulator generates a modulating signal according to a random walk model. Then, the phase-locked loop system generates a clock signal with spread spectrum in response to the modulating signal. A method for generating the spread spectrum clock signal using the spread spectrum clock generator is also provided.

Abstract: An antenna structure comprising a substrate and an antenna is provided. The substrate comprises an upper surface and an under surface. The antenna comprises a first metal pattern and a second metal pattern. The first metal pattern is disposed on the upper surface. The first metal pattern comprises a feeding portion and a transmission line connected to the feeding portion. The second metal pattern is disposed on the under surface, and comprises a first parasitic grounding arm, a second parasitic grounding arm, a connecting arm, a grounding plane and a grounding strip. The connecting arm has a parasitic slot, and connects the first parasitic grounding arm and the second parasitic grounding arm. The grounding strip connects the connecting arm and the grounding plane.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract: A power supply device for a door handle is provided. A rotation shaft of the door handle is provided with a drive gear, a first speed-change gear, a second speed-change gear, and a generator. Two end of a rotation shaft of the generator are respectively provided with a gravity wheel and a freewheel. The freewheel has one-way teeth, a link plate with link teeth and a third speed-change gear. The third speed-change gear meshes with the second speed-change gear. When the door handle is turned to an angle, the drive gear, the first and second speed-change gears, the third speed-change gear and the freewheel are driven to turn so that the rotation shaft of the generator is turned to generate power for an electric lock (such as a fingerprint lock, a coded lock, a chip induction lock).

Abstract: A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

Abstract: A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector.

Abstract: A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

Abstract: A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector.