Abstract: A method for information display, a processing device, and a display system are disclosed. The display system includes a light transmissive display screen, at least one first information extraction device, at least one second information extraction device, and a processing device. The processing device is connected to a display screen, the first information extraction device, and the second information extraction device. The first information extraction device extracts position information of a user. The second information extraction device extracts position information of a target object. The processing device constructs a fixed reference coordinate system, locates initial positions of the user, the target object, and the display screen, accordingly displays a fused image on the display screen, and updates the fused image displayed on the display screen according to at least one of a movement amount of the display screen and a movement amount of the user.

Abstract: A space three-dimensional imaging apparatus and a space three-dimensional imaging method are provided. The space three-dimensional imaging apparatus includes a transparent display device, a rotation motor and a processor. The transparent display device has at least one display plane. The rotation motor is configured to drive the transparent display device to rotate along an axis. The processor is coupled to the transparent display device and the rotation motor, and configured to retrieve a three-dimensional virtual image, cut multiple cutting images adapted to be displayed at multiple locations of each display plane after a rotation from the three-dimensional virtual image, and calculate a current location of each display plane during the rotation according to the driving of the rotation motor to control the transparent display device to display the cutting image corresponding to the current location on each display plane.

Abstract: A semiconductor structure includes a substrate having a trench array therein, wherein the trench array includes a plurality of outer trenches and a plurality of inner trenches, wherein each of the plurality of outer trenches has a width greater than a width of each of the plurality of inner trenches. The semiconductor structure further includes a capacitor material stack extending into the trench array.

Abstract: A transparent display device having an optical transmissive region and a circuit layout region is provided. A light transmittance of the optical transmissive region is greater than that of the circuit layout region. The transparent display device includes a plurality of display elements and a driving circuit. The display elements are disposed in the optical transmissive region or the circuit layout region. The driving circuit is disposed in the circuit layout region and is electrically connected with the display elements. The transparent display device satisfies: 0.1<light spot spreading degree <1.1+0.78×exp (0.0072×resolution), and 10%<aperture ratio <90%.

Abstract: An image information display method, an image information display system and a display. The method includes: capturing a background image of the display; obtaining an object according the background image; capturing a relative movement information between a first user and the object; capturing a visual information corresponding to the first user; determining whether a reading comfort degree corresponding to the object meets a predetermined condition according to the relative movement information and the visual information; displaying a dynamic information corresponding to the object by the display when the reading comfort degree meets the predetermined condition; and not displaying the dynamic information corresponding to the object by the display when the reading comfort degree does not meet the predetermined condition.

Abstract: A method of forming a semiconductor structure includes etching a substrate to define a plurality of trench arrays in the substrate, wherein each trench array of the plurality of trench arrays includes an outer trench extending along a periphery of each trench array of the plurality of trench array and a plurality of inner trenches, the outer trench has a width greater than a width of each of the plurality of inner trenches. The method includes depositing a first conductive layer in each trench array of the plurality of trench arrays, and on a top surface of the substrate. The method includes depositing a dielectric layer over the first conductive layer. The method includes depositing a second conductive layer over the dielectric layer. The method includes patterning the second conductive layer, the dielectric layer and the first conductive layer to form a capacitor.

Abstract: An information-display method for use in a transparent display is provided.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: A transparent display device having an optical transmissive region and a circuit layout region is provided. A light transmittance of the optical transmissive region is greater than that of the circuit layout region. The transparent display device includes a plurality of display elements and a driving circuit. The display elements are disposed in the optical transmissive region or the circuit layout region. The driving circuit is disposed in the circuit layout region and is electrically connected with the display elements. The transparent display device satisfies: 0.1<light spot spreading degree <1.1+0.78×exp (0.0072×resolution), and 10%<aperture ratio <90%.

Abstract: A light-emitting device and an electrode thereof are provided. The electrode includes a first electrode and an auxiliary electrode. The auxiliary electrode is disposed on the first electrode and covers a portion of the first electrode. A material of the first electrode is a metal oxide or alkali metal salt doped with a metal. A material of the auxiliary electrode includes a metal or an alloy thereof.

Abstract: A light emitting device and a transparent electrode thereof are provided in which the transparent electrode includes a transparent conducting layer and an injection layer. The injection layer is disposed between the transparent conducting layer and a light emitting layer of the light emitting device, wherein a material of the injection layer is a metal-doped alkali metal salt or a metal-doped metal oxide.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: A method of forming a semiconductor structure includes etching a substrate to define a plurality of trench arrays in the substrate, wherein each trench array of the plurality of trench arrays includes an outer trench extending along a periphery of each trench array of the plurality of trench array and a plurality of inner trenches, the outer trench has a width greater than a width of each of the plurality of inner trenches. The method includes depositing a first conductive layer in each trench array of the plurality of trench arrays, and on a top surface of the substrate. The method includes depositing a dielectric layer over the first conductive layer. The method includes depositing a second conductive layer over the dielectric layer. The method includes patterning the second conductive layer, the dielectric layer and the first conductive layer to form a capacitor.

Abstract: A method and structure for providing a semiconductor-on-insulator (SCOI) wafer having a buried low-K dielectric layer includes forming a device layer on a first semiconductor substrate. In various embodiments, at least a portion of the device layer is separated from the first semiconductor substrate, where the separating forms a cleaved surface on the separated portion of the device layer. In some examples, a patterned low-K dielectric layer is formed on a second semiconductor substrate. Thereafter, and in some embodiments, the separated portion of the device layer is bonded, along the cleaved surface, to the patterned low-K dielectric layer.

Abstract: A semiconductor structure includes a substrate having a trench array therein. The trench array includes a plurality of outer trenches adjacent to and extending along a periphery of the trench array and a plurality of inner trenches. Each of the plurality of outer trenches has a width greater than a width of each of the plurality of inner trenches. A capacitor material stack over the trench array.

Abstract: A transparent display device including a substrate having a light emitting region and a light transmitting region, a light emitting element located in the light emitting region, a first wall structure having an undercut sidewall, a first top conductive pattern and a barrier multi-layer structure is provided. The first wall structure forms the boundary between the light emitting region and the light transmitting region and the light emitting element is located in the light emitting region surrounded by the first wall structure. The first top conductive pattern is disposed on the top surface of the first wall structure. The barrier multi-layer structure is disposed on the light emitting element. The barrier multi-layer structure includes a first barrier layer and a second barrier layer. An overlapping portion of the first barrier layer and the second barrier is located in the light emitting region surrounded by the first wall structure.

Abstract: A method and structure for providing a semiconductor-on-insulator (SCOI) wafer having a buried low-K dielectric layer includes forming a device layer on a first semiconductor substrate. In various embodiments, at least a portion of the device layer is separated from the first semiconductor substrate, where the separating forms a cleaved surface on the separated portion of the device layer. In some examples, a patterned low-K dielectric layer is formed on a second semiconductor substrate. Thereafter, and in some embodiments, the separated portion of the device layer is bonded, along the cleaved surface, to the patterned low-K dielectric layer.

Abstract: An augmented reality display system including an input unit, an operation processing unit and an output unit is provided. The input unit is configured to obtain an environment information. The operation processing unit is configured to operate and process the environment information provided by the input unit to generate an output information. The output unit is configured to transmit the output information provided by the operation processing unit to a user. The output unit includes at least one display module. The at least one display module includes a transparent display, a first lens having a negative refractive power, a second lens having a negative refractive power and a third lens having a positive refractive power arranged in sequence from a display side to an eye side. An augmented reality display method is also provided.

Abstract: An augmented reality (AR) device including at least one optical module is provided. Each of the at least one optical module sequentially includes a transparent display, a first lens, a second lens, and a third lens from a display side to an eye side. The first lens has a negative refractive power. The second lens has a negative refractive power. The third lens has a positive refractive power. The number of lenses of the optical module having refractive powers is three, wherein the transparent display of the optical module is configured to emit a light beam, and the light beam sequentially passes through the first lens, the second lens, and the third lens to be incident into a user's eyes at the eye side, so that an AR virtual image on the display side is seen by the eyes.

Abstract: An image information display method, an image information display system and a display. The method includes: capturing a background image of the display; obtaining an object according the background image; capturing a relative movement information between a first user and the object; capturing a visual information corresponding to the first user; determining whether a reading comfort degree corresponding to the object meets a predetermined condition according to the relative movement information and the visual information; displaying a dynamic information corresponding to the object by the display when the reading comfort degree meets the predetermined condition; and not displaying the dynamic information corresponding to the object by the display when the reading comfort degree does not meet the predetermined condition.