Abstract: A semiconductor device includes: a conductive structure, a conductive bump extending into the conductive structure and contacting the conductive structure along a first surface, the conductive bump configured to interface with an external semiconductor device at a second surface opposite the first surface, the conductive bump being wider along the first surface than the second surface.

Abstract: A semiconductor device includes: a conductive structure, a conductive bump extending into the conductive structure and contacting the conductive structure along a first surface, the conductive bump configured to interface with an external semiconductor device at a second surface opposite the first surface, the conductive bump being wider along the first surface than the second surface.

Abstract: A light emitting device and a transparent electrode thereof are provided in which the transparent electrode includes a transparent conducting layer and an injection layer. The injection layer is disposed between the transparent conducting layer and a light emitting layer of the light emitting device, wherein a material of the injection layer is a metal-doped alkali metal salt or a metal-doped metal oxide.

Abstract: A transparent display device including a substrate having a light emitting region and a light transmitting region, a light emitting element located in the light emitting region, a first wall structure having an undercut sidewall, a first top conductive pattern and a barrier multi-layer structure is provided. The first wall structure forms the boundary between the light emitting region and the light transmitting region and the light emitting element is located in the light emitting region surrounded by the first wall structure. The first top conductive pattern is disposed on the top surface of the first wall structure. The barrier multi-layer structure is disposed on the light emitting element. The barrier multi-layer structure includes a first barrier layer and a second barrier layer. An overlapping portion of the first barrier layer and the second barrier is located in the light emitting region surrounded by the first wall structure.

Abstract: An information-display method for use in a transparent display is provided.

Abstract: A method and structure for providing a semiconductor-on-insulator (SCOI) wafer having a buried low-K dielectric layer includes forming a device layer on a first semiconductor substrate. In various embodiments, at least a portion of the device layer is separated from the first semiconductor substrate, where the separating forms a cleaved surface on the separated portion of the device layer. In some examples, a patterned low-K dielectric layer is formed on a second semiconductor substrate. Thereafter, and in some embodiments, the separated portion of the device layer is bonded, along the cleaved surface, to the patterned low-K dielectric layer.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: A backside illuminated image sensor device structure and methods for forming the same are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: A backside illuminated image sensor device structure and methods for forming the same are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract: A display including a plurality of display units and a plurality of holes is provided. Each of the display units includes a transparent area. Each of the holes is formed by a part of the transparent areas. At least one of the holes satisfies 2 ? ? ? ? A ? S < 8 3 ? 3 ? ? A , wherein A is an area of each of the holes and the S is a perimeter of each of the holes, and the at least one of the holes is a hole of a non-quadrilateral-type shape. These holes are arranged along a first direction in staggered arrangement, parts of projections of the holes along a second direction are overlapped with one another, and the first direction is different from the second direction.

Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract: A display structure is provided. The display structure includes a first substrate, a pixel array, a second substrate and an optical component. The pixel array is disposed on the first substrate. Each of pixels of the pixel array includes a light-transparent region and a non-light-transparent region. The second substrate is disposed on the pixel array. The optical component has a microlens structure. After the light passes through the microlens structure, the light passes directly through the plurality of the light-transparent regions without passing through the edge of the plurality of the non-light-transparent regions.

Abstract: An electro-wetting display panel including an active device array substrate, a dielectric layer, a rib structure, an opposite substrate, a first fluid and a second fluid is provided. The active device array substrate includes a first substrate and a plurality of pixel structures. Each pixel structure includes a shielding electrode connected to a common potential, an active device located between the shielding electrode and the first substrate, and a pixel electrode electrically connected to the active device. The dielectric layer covers the pixel structures. The rib structure is disposed on the active device array substrate and has openings. The active device and the pixel electrode of each pixel structure are located within one of the openings. The first fluid is configured between the dielectric layer and the opposite substrate. The second fluid is configured between the dielectric layer and the first fluid.

Abstract: A pixel structure and an electroluminescent display having the same are disclosed. The pixel structure comprises a first pixel and a second pixel. The first pixel and the second pixel each comprise a first sub-pixel, a second sub-pixel and a third sub-pixel. The first sub-pixel of the first pixel is adjacent to the first sub-pixel of the second pixel, the second sub-pixel of the first pixel is adjacent to the second sub-pixel of the second pixel, and the third sub-pixel of the first pixel is adjacent to the third sub-pixel of the second pixel. The first sub-pixel of the first pixel is adjacent to the first sub-pixel of the second pixel in a first direction, and the second sub-pixel of the first pixel is adjacent to the second sub-pixel of the second pixel in a second direction that is not parallel to the first direction.

Abstract: A display structure is provided. The display structure includes a first substrate, a pixel array, a second substrate and an optical component. The pixel array is disposed on the first substrate. Each of pixels of the pixel array includes a light-transparent region and a non-light-transparent region. The second substrate is disposed on the pixel array. The optical component has a microlens structure. After the light passes through the microlens structure, the light passes directly through the plurality of the light-transparent regions without passing through the edge of the plurality of the non-light-transparent regions.

Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract: An electro-wetting display panel including an active device array substrate, a dielectric layer, a rib structure, an opposite substrate, a first fluid and a second fluid is provided. The active device array substrate includes a first substrate and a plurality of pixel structures. Each pixel structure includes a shielding electrode connected to a common potential, an active device located between the shielding electrode and the first substrate, and a pixel electrode electrically connected to the active device. The dielectric layer covers the pixel structures. The rib structure is disposed on the active device array substrate and has openings. The active device and the pixel electrode of each pixel structure are located within one of the openings. The first fluid is configured between the dielectric layer and the opposite substrate. The second fluid is configured between the dielectric layer and the first fluid.

Abstract: A display including a pixel array substrate, an opposite substrate and a fluid medium is provided. The pixel array substrate includes a first substrate including pixel regions and pixel structures disposed in the pixel regions. Each pixel region includes a distribution region of pixel electrode and a non-electrode region. A pixel electrode of the pixel structure is disposed in the distribution region of pixel electrode and has at least one slit extending from the non-electrode region toward the distribution region of pixel electrode. The opposite substrate includes a second substrate and a common electrode disposed on the second substrate and contacting a polar fluid. The fluid medium includes the polar fluid and a non-polar fluid and flows between the pixel array substrate and the opposite substrate. The non-polar fluid is contracted toward the non-electrode region when a voltage difference is generated between the pixel and the common electrodes.