Abstract: A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer.

Abstract: The thin film transistor includes a gate, a gate insulating layer, a semiconductor layer, and a source and a drain. The gate insulating layer covers the gate. The semiconductor layer is located on the gate insulating layer which is disposed above the gate. The source and the drain are disposed above the gate insulating layer and are electrically connected to the semiconductor layer, respectively. The source and the drain are respectively located in different layers. A first contact resistance is existed between the semiconductor layer and the source, a second contact resistance is existed between the semiconductor layer and the drain, and. the first contact resistance is less than the second contact resistance.

Abstract: A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer.

Abstract: The thin film transistor includes a gate, a gate insulating layer, a semiconductor layer, and a source and a drain. The gate insulating layer covers the gate. The semiconductor layer is located on the gate insulating layer which is disposed above the gate. The source and the drain are disposed above the gate insulating layer and are electrically connected to the semiconductor layer, respectively. The source and the drain are respectively located in different layers. A first contact resistance is existed between the semiconductor layer and the source, a second contact resistance is existed between the semiconductor layer and the drain, and. the first contact resistance is less than the second contact resistance.

Abstract: A method of manufacturing a mold includes following steps. Providing a solution, which includes a solvent, a solute and a plurality of nanoparticles. Providing a first substrate. Spin coating the solution on the first substrate, and then vaporizing the solvent to form a first mold on the first substrate. Thus, an upper surface of the first mold has a plurality of first porous structures. The present invention further includes forming an optical film having protrusion patterns with the aforementioned mold.

Abstract: An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

Abstract: A cholesteric liquid crystal display device includes a first substrate, a second substrate, a cholesteric liquid crystal layer and a plurality of nano particles. The first substrate includes a first alignment layer. The second substrate includes a second alignment layer. The cholesteric liquid crystal layer is disposed between the first and second alignment layers. The nano particles are disposed on a surface of one of the first and second alignment layers, and located between the one of the first and second alignment layers and the cholesteric liquid crystal layer.

Abstract: A manufacturing method for a TFT array substrate includes providing a substrate; defining a plurality of normal alignment regions and a plurality of abnormal alignment regions on the substrate; forming an insulating layer and a transparent conductive layer on the substrate; performing a patterning process to at least one of the insulating layer and the transparent conductive layer to form a plurality of alignment structures in each abnormal alignment region; forming an alignment material layer on the substrate, the alignment material layer having a plurality of first alignment slits formed along the alignment structures in each of the abnormal alignment regions; and performing a rubbing alignment process to form a plurality of second alignment slits on the alignment material layer in each of the normal alignment regions along a alignment direction.

Abstract: The present invention relates to photo-crosslinkable liquid crystal monomers with optical activity. The liquid crystal monomers contains one chiral center with an acrylate group or terminal diacrylate groups, and terminal dibenzene rings are introduced in order to extend its hard segment for the purpose of getting a wider liquid crystalline phase. By introducing the liquid crystal monomers, the room temperature nematic liquid crystal or the cholesteric liquid crystal may have a better mutual solubility and a wider, steadier structure of liquid crystal.

Abstract: A blue phase liquid crystal composition includes a chiral dopant, a positive liquid crystal component and a negative liquid crystal component. The positive liquid crystal component includes at least one positive liquid crystal material, has a positive dielectric anisotropy and has no blue phase properties with respect to the chiral dopant. In addition, the negative liquid crystal component includes at least one negative liquid crystal material, has a negative dielectric anisotropy and has no blue phase properties with respect to the chiral dopant, so that the blue phase liquid crystal composition has a dielectric anisotropy between 0.5 and 14 and a blue phase temperature range larger than 3° C.

Abstract: A thin film transistor (TFT) array substrate includes a substrate having a plurality of normal alignment regions, a plurality of abnormal alignment regions, and a device region defined thereon, a plurality of scan lines, a plurality of data lines, a plurality of storage electrode lines, and a plurality of switch devices positioned in the device region, a plurality of alignment structures positioned in the abnormal alignment regions, and an alignment layer formed on the substrate and the alignment structures. The alignment layer further includes a plurality of first alignment slits covering the alignment structures in the abnormal alignment regions and a plurality of second alignment slits in the normal alignment regions. A depth and a width of the second alignment slits are identical to a depth and a width of the first alignment slits.

Abstract: The present invention relates to photo-crosslinkable liquid crystal monomers with optical activity. The liquid crystal monomers contains one chiral center with an acrylate group or terminal diacrylate groups, and terminal dibenzene rings are introduced in order to extend its hard segment for the purpose of getting a wider liquid crystalline phase. By introducing the liquid crystal monomers, the room temperature nematic liquid crystal or the cholesteric liquid crystal may have a better mutual solubility and a wider, steadier structure of liquid crystal.

Abstract: A blue phase liquid crystal composition includes a chiral dopant, a positive liquid crystal component and a negative liquid crystal component. The positive liquid crystal component includes at least one positive liquid crystal material, has a positive dielectric anisotropy and has no blue phase properties with respect to the chiral dopant. In addition, the negative liquid crystal component includes at least one negative liquid crystal material, has a negative dielectric anisotropy and has no blue phase properties with respect to the chiral dopant, so that the blue phase liquid crystal composition has a dielectric anisotropy between 0.5 and 14 and a blue phase temperature range larger than 3° C.

Abstract: A reflective liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, a first alignment layer, and a second alignment layer. The first substrate and the second substrate are disposed oppositely to each other. The liquid crystal layer is disposed between the first substrate and the second substrate. The liquid crystal layer includes a plurality of liquid crystal molecules for reflecting light within a wavelength range and allowing light beyond the wavelength range to pass through. The second alignment layer is disposed on an inner side of the first substrate facing the second substrate, and the second alignment layer is employed to absorb the light passing through the liquid crystal layer and align the liquid crystal molecules.

Abstract: A thin film transistor (TFT) array substrate includes a substrate and a pixel array. The pixel array is disposed on the substrate and includes a plurality of transistors and a plurality of reflective electrodes. Each transistor includes a gate, a drain, a source, and a channel layer. In each transistor, the channel layer is located between the gate and the drain, and between the gate and the source. The channel layer is partially overlapped with the gate, the drain and the source. The reflective electrodes are electrically connected to the drains respectively. Each reflective electrode includes a plurality of dyeing particles and a conductive layer. The dyeing particles are distributed in the conductive layer.

Abstract: Disclosed is an ink-jet device applicable to various ink-jet equipments. The device includes an ink reservoir, an ink chamber, pressure generating units and an ink-jet head. The ink-jet head has dielectric layers coated on an inner surface and an outer surface thereof. By applying a voltage to the dielectric layers, the dielectric layers are changed to be hydrophobic or hydrophilic, so as to reduce residual ink accumulated in the ink-jet head during the ink-jetting process, hence improving ink-jetting accuracy.

Abstract: A reflective liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, a first alignment layer, and a second alignment layer. The first substrate and the second substrate are disposed oppositely to each other. The liquid crystal layer is disposed between the first substrate and the second substrate. The liquid crystal layer includes a plurality of liquid crystal molecules for reflecting light within a wavelength range and allowing light beyond the wavelength range to pass through. The second alignment layer is disposed on an inner side of the first substrate facing the second substrate, and the second alignment layer is employed to absorb the light passing through the liquid crystal layer and align the liquid crystal molecules.

Abstract: A method of manufacturing a mold includes following steps. Providing a solution, which includes a solvent, a solute and a plurality of nanoparticles. Providing a first substrate. Spin coating the solution on the first substrate, and then vaporizing the solvent to form a first mold on the first substrate. Thus, an upper surface of the first mold has a plurality of first porous structures. The present invention further includes forming an optical film having protrusion patterns with the aforementioned mold.

Abstract: A light emitting diode and a fabricating method thereof are provided. The method including the steps of sequentially forming a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first region and a second region on a substrate. Next, an ion implantation process is performed to make the resistance of the first region be larger than of the second region. Afterward, a first electrode is formed above the first region of the second-type semiconductor layer. Since the method uses the ion implantation process to make the inner resistance of the second-type semiconductor layer various, the light emitting intensity and efficiency may both be increased.

Abstract: A thin film transistor (TFT) array substrate includes a substrate having a plurality of normal alignment regions, a plurality of abnormal alignment regions, and a device region defined thereon, a plurality of scan lines, a plurality of data lines, a plurality of storage electrode lines, and a plurality of switch devices positioned in the device region, a plurality of alignment structures positioned in the abnormal alignment regions, and an alignment layer formed on the substrate and the alignment structures. The alignment layer further includes a plurality of first alignment slits covering the alignment structures in the abnormal alignment regions and a plurality of second alignment slits in the normal alignment regions. A depth and a width of the second alignment slits are identical to a depth and a width of the first alignment slits.