Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to one embodiment includes an active region including a channel region and a source/drain region adjacent the channel region, a gate structure over the channel region of the active region, a source/drain contact over the source/drain region, a dielectric feature over the gate structure and including a lower portion adjacent the gate structure and an upper portion away from the gate structure, and an air gap disposed between the gate structure and the source/drain contact. A first width of the upper portion of the dielectric feature along a first direction is greater than a second width of the lower portion of the dielectric feature along the first direction. The air gap is disposed below the upper portion of the dielectric feature.

Abstract: Provided is a method for preventing or treating a metabolic disorder, including administering to a subject a therapeutically effective amount of TRABID protein or a functionally related variant thereof, or a nucleic acid encoding TRABID protein or a functionally related variant thereof. Also provided is a method for reducing fat accumulation through TRABID-induced deubiquitination to promote autophagy activity and lipid metabolism.

Abstract: A clutch includes an outer box and an intermediate member pivotably connected to the outer box. The intermediate member is coupled with an outer handle to pivot therewith. A torsion spring is disposed between the intermediate member and the outer box and biases the intermediate member to an initial position. A coupling member is pivotably mounted between the intermediate member and the outer box and is operatively connected to a first latch of a latch device of a lock device. When the coupling member and the intermediate member are jointly pivotable, pivotal movement of the outer handle causes the first latch to move from the latching position or the unlatching position. When the coupling member is not jointly pivotable with the intermediate member, pivotal movement of the outer handle is incapable of causing movement of the first latch. A lock device with the clutch is also disclosed.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes forming a first image sensor element within a first substrate and a second image sensor element within a second substrate. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths and the second image sensor element is configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths. A plurality of deposition processes are performed to form a band-pass filter over the second substrate. The band-pass filter has a plurality of alternating layers of a first material having a first refractive index and a second material having a second refractive index that is less than the first refractive index. The first substrate is bonded to the band-pass filter.

Abstract: Methods for estimating the Effective Modal Bandwidth (EMB) of laser optimized Multimode Fiber (MMF) at a specified wavelength, ?S, based on the measured EMB at a first reference measurement wavelength, ?M. In these methods the Differential Mode Delay (DMD) of a MMF is measured and the Effective Modal Bandwidth (EMB) is computed at a first measurement wavelength. By extracting signal features such as centroids, peak power, pulse widths, and skews, as described in this disclosure, the EMB can be estimated at a second specified wavelength with different degrees of accuracy. The first method estimates the EMB at the second specified wavelength based on measurements at the reference wavelength. The second method predicts if the EMB at the second specified wavelength is equal or greater than a specified bandwidth limit.

Abstract: An inspection device for inspecting an analyte in a liquid is provided, including a light source module, a first polarizing member, a second polarizing member, a sensing member, and a calibration assembly. The light source module provides a light, and the first polarizing member is disposed between the light source module and the second polarizing member. An accommodating space for accommodating the aforementioned liquid is formed between the first polarizing member and the second polarizing member. The second polarizing member is disposed between the first polarizing member and the sensing member. When the inspection device inspects the liquid, a portion of the light passes through the first polarizing member, the liquid, and the second polarizing member and reaches the sensing member, and another portion of the light enters the calibration assembly.

Abstract: A method for fabricating a semiconductor device is provided. The method includes generating a redistribution layer (RDL) layout, wherein the RDL layout comprises a plurality of redistribution lines; determining a first dummy region in the RDL layout according to the redistribution lines; disposing a plurality of first dummy redistribution lines in the first dummy region; performing a first modification process to enlarge at least one of the first dummy redistribution lines; determining the enlarged one of the first dummy redistribution lines as a second dummy region in the RDL layout when an area of the enlarged one of the first dummy redistribution lines is greater than a threshold value; disposing a plurality of second dummy redistribution lines in the second dummy region; and patterning a metal layer according to the RDL layout after disposing the second dummy redistribution lines in the second dummy region.

Abstract: An oligomer (2,6-dimethylphenylene ether) is provided. Its structure is shown as follows: which comprises separately independent hydrogen; alkyl or phenyl; separately independent —NR—, —CO—, —SO—, —CS—, —SO2—, —CH2—, —O—, null, —C(CH3)2—, or and a hydrogen, The features of the cured products include a high glass-transition temperature, a low dielectric feature, preferred thermal stability, and good flame retardancy. The present invention effectively controls the number-average molecular weight of the product to obtain excellent organic solubility.

Abstract: Various implementations of visual inspector attachments for fiber connector cleaners are disclosed. The example fiber optic inspection module includes a camera to capture an image of an end-face, a light source to illuminate the end-face, and a first mirror that reflects light from the light source to the end-face and includes a fixed point that allows the first mirror to pivot. Alternatively, an example fiber optic inspection module includes a camera to capture an image of an end-face, a light source to illuminate the end-face, and a first mirror that reflects light from the light source to the end-face and the first mirror moves in an upward direction.

Abstract: An isolated conversion apparatus with magnetic bias balance control includes an isolated converter, a controller, and a magnetic bias balance circuit. The isolated converter includes a transformer, and a primary side of the transformer includes a primary-side winding and at least one switch bridge arm. The controller is coupled to the at least one switch bridge arm, and provides a pulse width modulation (PWM) signal group to control the at least one switch bridge arm. The magnetic bias balance circuit is coupled to two ends of the primary-side winding and the controller, and provides a compensation voltage to the controller according to an average voltage of a winding voltage across the two ends of the primary-side winding. The controller adjusts a duty cycle of the PWM signal group according to the compensation voltage to correct the magnetic bias.

Abstract: A dynamic prediction model establishment method, an electric device and a user interface are provided. The dynamic prediction model establishment method includes the following steps. An integration model is established by a processing device according to at least one auxiliary data set. The integration model is modified as a dynamic prediction model by the processing device according to a target data set. A sampling point recommendation information is provided by the processing device according to an error degree or an uncertainty degree between the at least one auxiliary data set and the target data set.

Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first conductive structure disposed over the device, and the first conductive structure includes a first sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer disposed on the first portion, a second conductive structure disposed adjacent the first conductive structure, and the second conductive structure includes a second sidewall having a third portion and a fourth portion. The semiconductor device structure further includes a second spacer layer disposed on the third portion, and an air gap is formed between the first conductive structure and the second conductive structure. The second portion, the first spacer layer, the fourth portion, and the second spacer layer are exposed to the air gap.

Abstract: The present disclosure provides a toughened resin composition, which includes: (A) a toughened and modified compound, which includes a styrene maleic anhydride compound, an anhydride grafted olefin polymer, and a diisocyanate compound; (B) a thermosetting polymer; and (C) a toughening resin; wherein, in the toughened and modified compound, the diisocyanate compound forms a polyimide bond with the styrene maleic anhydride compound and the anhydride grafted olefin polymer, respectively. The present disclosure has high toughness and excellent mechanical properties; thus, it may have a wide range of applications in the fields of electronics, aerospace and the like.

Abstract: Disclosed herein is a method for alleviating atopic dermatitis using a composition containing at least one lactic acid bacterial strain. The at least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection (CCTCC) under an accession number CCTCC M 2011127, and Bifidobacterium animalis subsp. lactis CP-9 which is deposited at the CCTCC under an accession number CCTCC M 2014588.

Abstract: An image forming apparatus, and a control system and a control method of the image forming apparatus are provided. The image forming apparatus includes a non-transitory memory, a first controller, and a first interface. The first controller, connected to the non-transitory memory, is configured to control read and write of the non-transitory memory; first and second storage regions are configured in the non-transitory memory; the first storage region is configured to store driving programs; and the second storage region is configured to store first firmware files. The first interface is connected to the first controller; an external device accesses the non-transitory memory through the first interface; the driving programs are acquired by the external device through the first interface and installed in the external device; and the external device is capable of exchanging information with the image forming apparatus through an interface different from the first interface.

Abstract: A device includes a substrate, a vertical stack of nanostructure channels over the substrate, a gate structure wrapping around the nanostructure channels, and a source/drain region on the substrate. The device further includes a source/drain contact in contact with the source/drain region. The source/drain contact includes a core layer of a first material. A source/drain via is over and in contact with the source/drain contact. The source/drain via is the first material. A gate via is over and in electrical connection with the gate structure. The gate via is the first material.

Abstract: Vias, along with methods for fabricating vias, are disclosed that exhibit reduced capacitance and resistance. An exemplary interconnect structure includes a first source/drain contact and a second source/drain contact disposed in a dielectric layer. The first source/drain contact physically contacts a first source/drain feature and the second source/drain contact physically contacts a second source/drain feature. A first via having a first via layer configuration, a second via having a second via layer configuration, and a third via having a third via layer configuration are disposed in the dielectric layer. The first via and the second via extend into and physically contact the first source/drain contact and the second source/drain contact, respectively. A first thickness of the first via and a second thickness of the second via are the same. The third via physically contacts a gate structure, which is disposed between the first source/drain contact and the second source/drain contact.

Abstract: In a method of manufacturing a semiconductor device, a field effect transistor (FET) having a metal gate structure, a source and a drain over a substrate is formed. A first frontside contact disposed between dummy metal gate structures is formed over an isolation insulating layer. A frontside wiring layer is formed over the first frontside contact. A part of the substrate is removed from a backside of the substrate so that a bottom of the isolation insulating layer is exposed. A first opening is formed in the isolation insulating layer from the bottom of the isolation insulating layer to expose a bottom of the first frontside contact. A first backside contact is formed by filling the first opening with a conductive material to connect the first frontside contact.