Patents by Inventor Yu-Jen Tseng
Yu-Jen Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961810Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.Type: GrantFiled: June 21, 2021Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Yu-Wei Lin, Sheng-Yu Wu, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Publication number: 20210313287Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.Type: ApplicationFiled: June 21, 2021Publication date: October 7, 2021Inventors: Yu-Wei Lin, Sheng-Yu Wu, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Patent number: 11043462Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.Type: GrantFiled: June 10, 2019Date of Patent: June 22, 2021Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Yu-Wei Lin, Sheng-Yu Wu, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Publication number: 20190295971Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.Type: ApplicationFiled: June 10, 2019Publication date: September 26, 2019Inventors: Yu-Wei Lin, Sheng-Yu Wu, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Patent number: 10319691Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.Type: GrantFiled: November 14, 2016Date of Patent: June 11, 2019Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Yu-Wei Lin, Sheng-Yu Wu, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Patent number: 10153243Abstract: Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. A method of forming a device includes forming a conductive trace over a first substrate, the conductive trace having first tapering sidewalls, forming a conductive bump over a second substrate, the conductive bump having second tapering sidewalls and a first surface distal the second substrate, and attaching the conductive bump to the conductive trace via a solder region. The solder region extends from the first surface of the conductive bump to the first substrate, and covers the first tapering sidewalls of the conductive trace. The second tapering sidewalls of the conductive bump are free of the solder region.Type: GrantFiled: April 26, 2017Date of Patent: December 11, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Jen Tseng, Yen-Liang Lin, Tin-Hao Kuo, Chen-Shien Chen, Mirng-Ji Lii
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Patent number: 10008459Abstract: An embodiment ladder bump structure includes an under bump metallurgy (UBM) feature supported by a substrate, a copper pillar mounted on the UBM feature, the copper pillar having a tapering curved profile, which has a larger bottom critical dimension (CD) than a top critical dimension (CD) in an embodiment, a metal cap mounted on the copper pillar, and a solder feature mounted on the metal cap.Type: GrantFiled: January 4, 2013Date of Patent: June 26, 2018Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Pei-Chun Tsai, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Patent number: 9966346Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal bump on the under bump metallurgy feature, and a substrate trace on a substrate, the substrate trace coupled to the metal bump through a solder joint and intermetallic compounds, a ratio of a first cross sectional area of the intermetallic compounds to a second cross sectional area of the solder joint greater than forty percent.Type: GrantFiled: August 17, 2015Date of Patent: May 8, 2018Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Guan-Yu Chen, Yu-Wei Lin, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Patent number: 9953939Abstract: A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.Type: GrantFiled: November 18, 2016Date of Patent: April 24, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Liang Lin, Yu-Jen Tseng, Chang-Chia Huang, Tin-Hao Kuo, Chen-Shien Chen
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Patent number: 9917035Abstract: A bump-on-trace interconnection structure utilizing a lower volume solder joint for joining a conductive metal pillar and a metal line trace includes a conductive metal pillar having a bonding surface having a width WP and a metal line trace, provided on a package substrate, having a top surface with a width WT, where WP is greater than WT. The solder joint is bonded to the bonding surface by wetting across the width WP and bonded predominantly only to the top surface of the metal line trace by wetting predominantly only to the top surface across the width WT.Type: GrantFiled: October 24, 2012Date of Patent: March 13, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Jen Tseng, Yen-Liang Lin, Tin-Hao Kuo, Chen-Shien Chen, Mirng-Ji Lii
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Publication number: 20170229421Abstract: Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. A method of forming a device includes forming a conductive trace over a first substrate, the conductive trace having first tapering sidewalls, forming a conductive bump over a second substrate, the conductive bump having second tapering sidewalls and a first surface distal the second substrate, and attaching the conductive bump to the conductive trace via a solder region. The solder region extends from the first surface of the conductive bump to the first substrate, and covers the first tapering sidewalls of the conductive trace. The second tapering sidewalls of the conductive bump are free of the solder region.Type: ApplicationFiled: April 26, 2017Publication date: August 10, 2017Inventors: Yu-Jen Tseng, Yen-Liang Lin, Tin-Hao Kuo, Chen-Shien Chen, Mirng-Ji Lii
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Patent number: 9673125Abstract: A structure comprises a first passivation layer formed over a substrate, a second passivation layer formed over the first passivation layer, wherein the second passivation layer includes a first opening with a first dimension, a bond pad embedded in the first passivation layer and the second passivation layer, a protection layer formed on the second passivation layer comprising a second opening with a second dimension, wherein the second dimension is greater than the first dimension and a connector formed on the bond pad.Type: GrantFiled: October 30, 2012Date of Patent: June 6, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hao-Juin Liu, Yao-Chun Chuang, Chita Chuang, Yu-Jen Tseng, Chen-Shien Chen
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Patent number: 9646923Abstract: Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. In one embodiment, a semiconductor device includes a substrate and conductive traces disposed over the substrate. Each of the conductive traces has a bottom region proximate the substrate and a top region opposite the bottom region. The top region has a first width and the bottom region has a second width. The second width is greater than the first width.Type: GrantFiled: December 18, 2012Date of Patent: May 9, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Jen Tseng, Yen-Liang Lin, Tin-Hao Kuo, Chen-Shien Chen, Mirng-Ji Lii
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Publication number: 20170117245Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.Type: ApplicationFiled: November 14, 2016Publication date: April 27, 2017Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Wei Lin, Sheng-Yu Wu, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Publication number: 20170069587Abstract: A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.Type: ApplicationFiled: November 18, 2016Publication date: March 9, 2017Inventors: Yen-Liang Lin, Yu-Jen Tseng, Chang-Chia Huang, Tin-Hao Kuo, Chen-Shien Chen
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Patent number: 9536850Abstract: A package and method of making the package are provided. An embodiment package includes an integrated circuit supporting a conductive pillar, a substrate having a landing pad on each embedded metal trace, a landing pad width greater than a corresponding embedded metal trace width, and a conductive material electrically coupling the conductive pillar to the landing pad. In an embodiment, the landing pad overlaps the metal trace in one direction.Type: GrantFiled: March 8, 2013Date of Patent: January 3, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Mirng-Ji Lii, Chen-Shien Chen, Yu-Jen Tseng
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Patent number: 9508668Abstract: A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.Type: GrantFiled: July 21, 2015Date of Patent: November 29, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Liang Lin, Yu-Jen Tseng, Chang-Chia Huang, Tin-Hao Kuo, Chen-Shien Chen
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Patent number: 9496233Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.Type: GrantFiled: January 17, 2013Date of Patent: November 15, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Wei Lin, Sheng-Yu Wu, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Publication number: 20150357301Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal bump on the under bump metallurgy feature, and a substrate trace on a substrate, the substrate trace coupled to the metal bump through a solder joint and intermetallic compounds, a ratio of a first cross sectional area of the intermetallic compounds to a second cross sectional area of the solder joint greater than forty percent.Type: ApplicationFiled: August 17, 2015Publication date: December 10, 2015Inventors: Guan-Yu Chen, Yu-Wei Lin, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
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Publication number: 20150325542Abstract: A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.Type: ApplicationFiled: July 21, 2015Publication date: November 12, 2015Inventors: Yen-Liang Lin, Yu-Jen Tseng, Chang-Chia Huang, Tin-Hao Kuo, Chen-Shien Chen