Abstract: A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.

Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal bump on the under bump metallurgy feature, and a substrate trace on a substrate, the substrate trace coupled to the metal bump through a solder joint and intermetallic compounds, a ratio of a first cross sectional area of the intermetallic compounds to a second cross sectional area of the solder joint greater than forty percent.

Abstract: A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar width, and the UBM width is greater than the pillar width.

Abstract: Methods for assembling metal bump dies. In an embodiment, a method includes providing an integrated circuit die having a plurality of conductive terminals; depositing solder to form solder depositions on the conductive terminals; providing a substrate having a die attach region on a surface for receiving the integrated circuit die, the substrate having a plurality of conductive traces formed in the die attach region; aligning the integrated circuit die and the substrate and bringing the plurality of conductive terminals and the conductive traces into contact, so that the solder depositions physically contact the conductive traces; and selectively heating the integrated circuit die and the conductive terminals to a temperature sufficient to cause the solder depositions to melt and reflow, forming solder connections between the conductive traces on the substrate and the conductive terminals on the integrated circuit die. Various energy sources are disclosed for the selective heating.

Abstract: A package and method of making the package are provided. An embodiment package includes an integrated circuit supporting a conductive pillar, a substrate having a landing pad on each embedded metal trace, a landing pad width greater than a corresponding embedded metal trace width, and a conductive material electrically coupling the conductive pillar to the landing pad. In an embodiment, the landing pad overlaps the metal trace in one direction.

Abstract: Methods for assembling metal bump dies. In an embodiment, a method includes providing an integrated circuit die having a plurality of conductive terminals; depositing solder to form solder depositions on the conductive terminals; providing a substrate having a die attach region on a surface for receiving the integrated circuit die, the substrate having a plurality of conductive traces formed in the die attach region; aligning the integrated circuit die and the substrate and bringing the plurality of conductive terminals and the conductive traces into contact, so that the solder depositions physically contact the conductive traces; and selectively heating the integrated circuit die and the conductive terminals to a temperature sufficient to cause the solder depositions to melt and reflow, forming solder connections between the conductive traces on the substrate and the conductive terminals on the integrated circuit die. Various energy sources are disclosed for the selective heating.

Abstract: A bump-on-trace interconnection structure utilizing a lower volume solder joint for joining a conductive metal pillar and a metal line trace includes a conductive metal pillar having a bonding surface having a width WP and a metal line trace, provided on a package substrate, having a top surface with a width WT, where WP is greater than WT. The solder joint is bonded to the bonding surface by wetting across the width WP and bonded predominantly only to the top surface of the metal line trace by wetting predominantly only to the top surface across the width WT.

Abstract: An embodiment bump structure includes a contact element formed on a substrate, a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element a polyimide layer overlying the passivation layer, the polyimide layer having a polyimide opening exposing the contact element an under bump metallurgy (UMB) feature electrically coupled to the contact element, the under bump metallurgy feature having a UBM width, and a copper pillar on the under bump metallurgy feature, a distal end of the copper pillar having a pillar width, the UBM width greater than the pillar width.

Abstract: An embodiment ladder bump structure includes an under bump metallurgy (UBM) feature supported by a substrate, a copper pillar mounted on the UBM feature, the copper pillar having a tapering curved profile, which has a larger bottom critical dimension (CD) than a top critical dimension (CD) in an embodiment, a metal cap mounted on the copper pillar, and a solder feature mounted on the metal cap.

Abstract: A method and device for preventing the bridging of adjacent metal traces in a bump-on-trace structure. An embodiment comprises determining the coefficient of thermal expansion (CTE) and process parameters of the package components. The design parameters are then analyzed and the design parameters may be modified based on the CTE and process parameters of the package components.

Abstract: A method and device for preventing the bridging of adjacent metal traces in a bump-on-trace structure. An embodiment comprises determining the coefficient of thermal expansion (CTE) and process parameters of the package components. The design parameters are then analyzed and the design parameters may be modified based on the CTE and process parameters of the package components.

Abstract: The active reflective warning apparatus includes a transparent housing having a clear surface, a glittering retroreflective sheeting applied on the clear surface of the transparent housing for reflecting an external light, and a light-emitting unit disposed in the transparent housing. The light emitting from the light-emitting unit may emit through the clear surface and the glittering retroreflective sheeting.