Patents by Inventor Yu-Jiun Shen
Yu-Jiun Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220393659Abstract: An acoustic wave device includes: a substrate; a first electrode on the substrate; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer. A bonding interface is located between the substrate and the first electrode. The full width at half maximum (FWHM) in the X-ray diffraction pattern of the crystal plane <002> of the piezoelectric layer is between 10 arc-sec and 3600 arc-sec.Type: ApplicationFiled: June 2, 2022Publication date: December 8, 2022Inventors: TA-CHENG HSU, WEI-SHOU CHEN, CHUNG-JEN CHUNG, CHENG-TSE CHOU, TIEN-YU WANG, CHUN-YI LIN, YU-JIUN SHEN, WEI-CHING GUO
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Patent number: 11049961Abstract: A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.Type: GrantFiled: June 26, 2019Date of Patent: June 29, 2021Assignee: EPISTAR CORPORATIONInventors: Shang-Ju Tu, Chia-Cheng Liu, Tsung-Cheng Chang, Ya-Yu Yang, Yu-Jiun Shen, Jen-Inn Chyi
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Publication number: 20200006543Abstract: A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.Type: ApplicationFiled: June 26, 2019Publication date: January 2, 2020Inventors: Shang-Ju TU, Chia-Cheng LIU, Tsung-Cheng CHANG, Ya-Yu YANG, Yu-Jiun SHEN, Jen-Inn CHYI
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Patent number: 10290730Abstract: A semiconductor power device includes an engineered aluminum-nitride substrate structure, and method of fabricating the same are described. The engineered substrate structure is effectively integrated with a transition layer of AlN/AlGaN disposed thereon, a buffer layer disposed on the transition layer having a C—(Al)GaN/u-GaN multiple stacking layered structure, a channel layer, a barrier layer, and an optional SiNx interlayer together, to form a GaN-based semiconductor power device. The GaN buffer layer is capable of achieving sufficient thickness for higher performance. The engineered substrate structure has a core region made of an aluminum nitride (AlN) substrate, a single crystal silicon layer as top material layer thereof, and bonded together with an encapsulated multi-layered structure containing adhesive layers, thin film layers and the AlN substrate.Type: GrantFiled: April 12, 2018Date of Patent: May 14, 2019Assignee: Epistar CorporationInventors: Ya-Yu Yang, Yu-Jiun Shen, Chia-Cheng Liu
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Patent number: 8946736Abstract: An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.Type: GrantFiled: December 31, 2012Date of Patent: February 3, 2015Assignee: Epistar CorporationInventors: Wei-Chih Peng, Ta-Cheng Hsu, Yu-Jiun Shen, Ching-Fu Tsai
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Publication number: 20140103290Abstract: A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.Type: ApplicationFiled: October 16, 2012Publication date: April 17, 2014Applicant: Epistar CorporationInventors: Sheng-Horng YEN, Ta-Cheng Hsu, Yu-Jiun Shen
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Patent number: 8664087Abstract: A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface.Type: GrantFiled: December 2, 2011Date of Patent: March 4, 2014Assignee: EPISTAR CorporationInventors: Shih-Pang Chang, Hung-Chi Yang, Yu-Jiun Shen
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Patent number: 8362501Abstract: The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.Type: GrantFiled: April 29, 2010Date of Patent: January 29, 2013Assignee: Epistar CorporationInventors: Hung-Chih Yang, Yu-Jiun Shen, Hsin-Mao Liu
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Patent number: 8344409Abstract: An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.Type: GrantFiled: July 7, 2011Date of Patent: January 1, 2013Assignee: Epistar CorporationInventors: Wei-Chih Peng, Ta-Cheng Hsu, Yu-Jiun Shen, Ching-Fu Tsai
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Patent number: 8232563Abstract: A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.Type: GrantFiled: June 14, 2007Date of Patent: July 31, 2012Assignee: Epistar CorporationInventors: Chien-Yuan Wang, Min-Hsun Hsieh, Yu-Jiun Shen
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Publication number: 20120142142Abstract: A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface.Type: ApplicationFiled: December 2, 2011Publication date: June 7, 2012Inventors: Shih-Pang CHANG, Hung-Chi YANG, Yu-Jiun SHEN
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Publication number: 20120104440Abstract: An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.Type: ApplicationFiled: July 7, 2011Publication date: May 3, 2012Inventors: Wei-Chih PENG, Ta-Cheng Hsu, Yu-Jiun Shen, Ching-Fu Tsai
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Publication number: 20110175126Abstract: A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.Type: ApplicationFiled: January 18, 2011Publication date: July 21, 2011Inventors: Hung-Chih YANG, Ming-Chi Hsu, Ta-Cheng Hsu, Chih-Chung Yang, Tsung-Yi Tang, Yung-Sheng Chen, Wen-Yu Shiao, Che-Hao Liao, Yu-Jiun Shen, Sheng-Horng Yen
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Publication number: 20100276724Abstract: The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.Type: ApplicationFiled: April 29, 2010Publication date: November 4, 2010Inventors: Hung-Chih YANG, Yu-Jiun Shen, Hsin-Mao Liu
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Patent number: 7615773Abstract: A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.Type: GrantFiled: December 29, 2006Date of Patent: November 10, 2009Assignee: Epistar CorporationInventors: Shih-Nan Yen, Jung-Tu Chiu, Yu-Jiun Shen, Ching-Fu Tsai
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Publication number: 20080308818Abstract: A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.Type: ApplicationFiled: June 14, 2007Publication date: December 18, 2008Applicant: EPISTAR CORPORATIONInventors: Chien-Yuan Wang, Min-Hsun Hsieh, Yu-Jiun Shen
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Publication number: 20070152207Abstract: A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.Type: ApplicationFiled: December 29, 2006Publication date: July 5, 2007Applicant: EPISTAR CORPORATIONInventors: Shih-Nan Yen, Jung-Tu Chiu, Yu-Jiun Shen, Ching-Fu Tsai