Abstract: A wireless communication device includes a transceiver device and a data processing device. The transceiver device receives a frame from a wireless communication channel. The data processing device receives the frame and determines whether at least one of multiple predetermined frames has been received or is about to be received according to the frame. The data processing device enables a batch-frame indication mechanism when determining that said at least one of the multiple predetermined frames has been received or is about to be received. When the batch-frame indication mechanism is enabled, every time when one of the multiple predetermined frames is received, it is buffered in a reception queue instead of issuing a fetch indication, and when a number of predetermined frames buffered in the reception queue reaches a predetermined batch size, the data processing device issues the fetch indication to a back-end processing device.

Abstract: A method includes epitaxially growing a Ge1-xSnx channel layer over a substrate. The Ge1-xSnx channel layer is in a metastable state. A Ge1-ySny barrier layer is epitaxially grown over the Ge1-xSnx channel layer to form a two-dimensional hole gas in the Ge1-xSnx channel layer. The Ge1-xSnx channel layer and the Ge1-ySny barrier layer are etched to form a first opening and a second opening in the Ge1-xSnx channel layer and the Ge1-ySny barrier layer. A first source/drain electrode and a second source/drain electrode are deposited in the first opening and the second opening, respectively. A gate electrode is formed over the Ge1-ySny barrier layer.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and overlaps with the transistor. The ring resonator includes a conductive loop and an impedance matching element. The conductive loop includes a loop portion having two first parts and a second part and two feeding lines. Each of the first parts of the loop portion is between the second part of the loop portion and one of the feeding lines, and a tunnel barrier of the transistor is closer to the second part than to the feeding lines. The impedance matching element is closer to the feeding lines than to the second part.

Abstract: A flash memory device includes a substrate, a semiconductor quantum well layer, a semiconductor spacer, a semiconductor channel layer, a gate structure, and source/drain regions. The semiconductor quantum well layer is formed of a first semiconductor material and is disposed over the substrate. The semiconductor spacer is formed of a second semiconductor material and is disposed over the first semiconductor channel layer. The semiconductor channel layer is formed of the first semiconductor material and is disposed over the semiconductor spacer. Thea gate structure is over the second semiconductor channel layer. The source/drain regions are over the substrate and are on opposite sides of the gate structure.

Abstract: Some implementations described herein provide an inductor device formed in a substrate of a semiconductor device including an integrated circuit device. The inductor device may use one or more conduction layers that are included in the substrate. Furthermore, the inductor device may be electrically coupled to the integrated circuit device. By forming the inductor device in the substrate of the semiconductor device, an electrical circuit including the inductor device and the integrated circuit device may be formed within a single semiconductor device.

Abstract: A flash memory device includes a substrate, a semiconductor quantum well layer, a semiconductor spacer, a semiconductor channel layer, a gate structure, and source/drain regions. The semiconductor quantum well layer is formed of a first semiconductor material and is disposed over the substrate. The semiconductor spacer is formed of a second semiconductor material and is disposed over the first semiconductor channel layer. The semiconductor channel layer is formed of the first semiconductor material and is disposed over the semiconductor spacer. Thea gate structure is over the second semiconductor channel layer. The source/drain regions are over the substrate and are on opposite sides of the gate structure.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and overlaps with the transistor. The ring resonator includes a conductive loop and an impedance matching element. The conductive loop includes a loop portion having two first parts and a second part and two feeding lines. Each of the first parts of the loop portion is between the second part of the loop portion and one of the feeding lines, and a tunnel barrier of the transistor is closer to the second part than to the feeding lines. The impedance matching element is closer to the feeding lines than to the second part.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive bump over and electrically connected to the chip. The chip package structure includes a ring-like structure over and electrically insulated from the chip. The ring-like structure surrounds the conductive bump, and the ring-like structure and the conductive bump are made of a same material.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive bump over and electrically connected to the chip. The chip package structure includes a ring-like structure over and electrically insulated from the chip. The ring-like structure surrounds the conductive bump, and the ring-like structure and the conductive bump are made of a same material.

Abstract: A wireless communication device includes a transceiver device and a data processing device. The transceiver device receives a frame from a wireless communication channel. The data processing device receives the frame and determines whether at least one of multiple predetermined frames has been received or is about to be received according to the frame. The data processing device enables a batch-frame indication mechanism when determining that said at least one of the multiple predetermined frames has been received or is about to be received. When the batch-frame indication mechanism is enabled, every time when one of the multiple predetermined frames is received, it is buffered in a reception queue instead of issuing a fetch indication, and when a number of predetermined frames buffered in the reception queue reaches a predetermined batch size, the data processing device issues the fetch indication to a back-end processing device.

Abstract: A flash memory device includes a substrate, a semiconductor quantum well layer, a semiconductor spacer, a semiconductor channel layer, a gate structure, and source/drain regions. The semiconductor quantum well layer is formed of a first semiconductor material and is disposed over the substrate. The semiconductor spacer is formed of a second semiconductor material and is disposed over the first semiconductor channel layer. The semiconductor channel layer is formed of the first semiconductor material and is disposed over the semiconductor spacer. Thea gate structure is over the second semiconductor channel layer. The source/drain regions are over the substrate and are on opposite sides of the gate structure.

Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and includes a conductive loop and an impedance matching element. The conductive loop overlaps with the transistor. The impedance matching element is on the conductive loop and electrically isolated from the transistor.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The transistor is configured to generate a quantum dot. The ring resonator is over the substrate and includes a conductive loop and an impedance matching element. The conductive loop overlaps with the transistor. The impedance matching element is on the conductive loop and is configured to determine a resonance frequency of the ring resonator.

Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.

Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The transistor is configured to generate a quantum dot. The ring resonator is over the substrate and includes a conductive loop and an impedance matching element. The conductive loop overlaps with the transistor. The impedance matching element is on the conductive loop and is configured to determine a resonance frequency of the ring resonator.

Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.